Abstract:Epitaxially-grown semiconductor quantum dots (QDs) provide an attractive platform for the development of deterministic sources of high-quality quantum states of light. Such non-classical light sources are essential for quantum information processing and quantum communication. QDs emitting in the telecom wavelengths are especially important for ensuring compatibility with optical fiber systems required to implement quantum communication networks. To this end, GaSb QDs fabricated by filling local-droplet etched nanoholes are emerging as a viable approach, yet the electronic properties of such nanostructures have not been studied in detail. In this article, an insight into the electronic structure and carrier dynamics in GaSb/AlGaSb QDs is provided through a systematic experimental analysis of their temperature-dependent photoluminescence behavior. A steady-state rate equation model is used to reveal the relevant energy barriers for thermally activated carrier capture and escape processes. Furthermore, results of detailed theoretical simulations of quantum-confined energy states using the multi-band k.p model and the effective mass method are presented. The purpose of the simulations is to reveal the direct and indirect energy states, carrier wavefunctions, and allowed optical transitions for GaSb QDs with different physical dimensions.

Phonon Bottleneck in GaAs / Al X Ga 1 − X As Quantum Dots

Non-thermal Emission from InGaAs Quantum Dots in a Microcavity: A Novel Cavity-Bottleneck Effect

Differential Transmission Measurement of Phonon Bottleneck in Self-Assembled Quantum Dot Intersubband Relaxation

Stimulated Phonon Emission in a Driven Double Quantum Dot

Exciton states in strained GaN/AlxGa1-xN quantum dots

Low-noise GaAs quantum dots for quantum photonics

Dot-Size Dependent Excitons in Droplet-Etched Cone-Shell GaAs Quantum Dots

Raman Phonon Emission in a Driven Double Quantum Dot

Temperature-Dependent Carrier Tunneling for Self-Assembled Inas/Gaas Quantum Dots with A Gaasn Quantum Well Injector

Photoluminescence of patterned arrays of vertically stacked InAs/GaAs quantum dots

Revealing Exciton Dephasing and Transport Dynamics in Semiconductor Quantum Well - Quantum Dot Systems Using Optical 2d Fourier Transform Spectroscopy

Exciton-Exciton and Exciton-Phonon Interactions in an Interfacial Gaas Quantum Dot Ensemble

Comparative study of exciton–phonon interactions in quantum dots grown by droplet epitaxy

Quantum Confinement of Electron-Phonon Coupling in Graphene Quantum Dots

Emission Variation of InAs Quantum Dots within (Al)GaInAs Quantum Wells in AlGaAs/GaAs Structures versus Quantum Well Compositions

A Comparison of Photoluminescence Properties of InGaAs/GaAs Quantum Dots with a Single Quantum Well

A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates

Spontaneous Emission Mechanisms of GaInAsN∕GaAs Quantum Dot Systems

Direct Observation of Single InAs/GaAs Quantum Dot Spectrum Without Mesa or Mask

Electronic structure of GaSb/AlGaSb quantum dots formed by filling droplet-etched nanoholes

Observation of excited states in a p-type GaAs quantum dot