Abstract:As an emerging material, graphene has attracted vast interest in solid-state physics, materials science, nanoelectronics and bioscience. Graphene has zero bandgap with its valence and conduction bands are cone-shaped and meet at the K points of the Brillouin zone. Due to its high intrinsic carrier mobility, large saturation velocity, and high on state current density, graphene is also considered as a promising candidate for high-frequency devices. To improve the reliability of graphene FETs, which include shifting the Dirac point voltage toward zero, increasing the channel mobility and decreasing the source/drain contact resistance, we optimized the device fabrication process. For CVD grown graphene, the film transfer and the device fabrication processes may produce interfacial states between graphene and the substrate and make graphene p or n-type, which shift the fermi level far away from the Dirac point. We have found that after graphene film transfer, an annealing process at 400°C under N2 ambient will shift Dirac point toward zero gate voltage. Ti/Au, Ni, and Ti/Pd/Au source/drain structures have been studied to minimize the contact resistance. According to the measured data, Ti/Pd/Au structure gives the lowest contact resistance (∼500ohmμm). By controlling the process of graphene growth, transfer and device fabrication, we have achieved graphene FETs with a field effective mobility of 16,000cm2/Vs after subtraction of contact resistance. The contact resistivity was estimated in the range of 1.1×10−6Ωcm2 to 8.8×10−6Ωcm2, which is close to state of the art III–V technology. The maximum transconductance was found to be 280mS/mm at VD=0.5V, which is the highest value among CVD graphene FETs published to date.

Current Self-Amplification Effect of Graphene-Based Transistor in High-Field Transport

Understanding asymmetric transfer characteristics and hysteresis behaviors in graphene devices under different chemical atmospheres

Enhanced Performance of Graphene Transistor with Ion-Gel Top Gate

Nonlinear Current-Voltage Characteristics and Enhanced Negative Differential Conductance in Graphene Field Effect Transistors.

Dirac-cone Induced Gating Enhancement in Single-Molecule Field-Effect Transistors

Field‐effect Thermoelectric Hotspot in Monolayer Graphene Transistor

Radiation-Induced Charge Trapping and Low-Frequency Noise of Graphene Transistors

Transconductance Amplification in Dirac‐Source Field‐Effect Transistors Enabled by Graphene/Nanotube Hereojunctions

Graphene Field Effect Transistors: A Review

Self-Optimizing Effect of a Few-Layer Graphene's Top-Edge Structure During Field Electron Emission Observed by in Situ TEM.

Quantum behavior of graphene transistors near the scaling limit.

Computational Study of Graphene-Based Vertical Field Effect Transistor

High-frequency self-aligned graphene transistors with transferred gate stacks

The impact of the thermal conductivity of a dielectric layer on the self-heating effect of a graphene transistor

Intrinsic Current-Voltage Characteristics of Graphene Nanoribbon Transistors and Effect of Edge Doping.

Sub-10 nm Gate Length Graphene Transistors: Operating at Terahertz Frequencies with Current Saturation

Large Transport Gap Modulation in Graphene via Electric Field Controlled Reversible Hydrogenation

Optimizing the fabrication process for high performance graphene field effect transistors.

Modeling and Optimization of Ambipolar Graphene Transistors in the Diffusive Limit

Room-temperature electric field effect and carrier-type inversion in graphene films

Graphene-on-Diamond Devices with Enhanced Current-Carrying Capacity: Carbon sp2-on-sp3 Technology