Preparation and Field-Induced Electrical Properties of Perovskite Relaxor Ferroelectrics

Huiqing Fan,Biaolin Peng,Qi Zhang
DOI: https://doi.org/10.4313/teem.2015.16.1.1
2015-01-01
Transactions on Electrical and Electronic Materials
Abstract:(111)-oriented and random oriented Pb0.8Ba0.2ZrO3 (PBZ) perovskite relaxor ferroelectric thin films were fabricated on Pt(111)/TiOx/SiO2/Si substrate by sol-gel method. Nano-scaled antiferroelectric and ferroelectric two-phase coexisted in both (111)-oriented and random oriented PBZ thin film. High dielectric tunability (eta = 75%, E = 560 kV/cm) and figure-of-merit (FOM similar to 236) at room temperature was obtained in (111)-oriented thin film. Meanwhile, giant electrocaloric effect (ECE) (Delta T = 45.3 K and Delta S = 46.9 JK(-1) kg(-1) at 598 kVcm(-1)) at room temperature (290 K), rather than at its Curie temperature (408 K), was observed in random oriented Pb0.8Ba0.2ZrO3 (PBZ) thin film, which makes it a promising material for the application to cooling systems near room temperature. The giant ECE as well as high dielectric tunability are attributed to the coexistence of AFE and FE phases and field-induced nano-scaled AFE to FE phase transition.
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