Abstract:Ordering of ferroelectric polarization1 and its trajectory in response to an electric field2 are essential for the operation of non-volatile memories3, transducers4 and electro-optic devices5. However, for voltage control of capacitance and frequency agility in telecommunication devices, domain walls have long been thought to be a hindrance because they lead to high dielectric loss and hysteresis in the device response to an applied electric field6. To avoid these effects, tunable dielectrics are often operated under piezoelectric resonance conditions, relying on operation well above the ferroelectric Curie temperature7, where tunability is compromised. Therefore, there is an unavoidable trade-off between the requirements of high tunability and low loss in tunable dielectric devices, which leads to severe limitations on their figure of merit. Here we show that domain structure can in fact be exploited to obtain ultralow loss and exceptional frequency selectivity without piezoelectric resonance. We use intrinsically tunable materials with properties that are defined not only by their chemical composition, but also by the proximity and accessibility of thermodynamically predicted strain-induced, ferroelectric domain-wall variants8. The resulting gigahertz microwave tunability and dielectric loss are better than those of the best film devices by one to two orders of magnitude and comparable to those of bulk single crystals. The measured quality factors exceed the theoretically predicted zero-field intrinsic limit owing to domain-wall fluctuations, rather than field-induced piezoelectric oscillations, which are usually associated with resonance. Resonant frequency tuning across the entire L, S and C microwave bands (1-8 gigahertz) is achieved in an individual device-a range about 100 times larger than that of the best intrinsically tunable material. These results point to a rich phase space of possible nanometre-scale domain structures that can be used to surmount current limitations, and demonstrate a promising strategy for obtaining ultrahigh frequency agility and low-loss microwave devices.

Giant Dielectric Permittivity in Ferroelectric Thin Films: Domain Wall Ping Pong.

Post-synthesis tuning of dielectric constant via ferroelectric domain wall engineering

Giant Domain Wall Conductivity in Self‐Assembled BiFeO 3 Nanocrystals

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films.

Ultrahigh Dielectric Permittivity and Ferroelectric Polarization in Size-Scaled Hf0.5Zr0.5O2 Thin-Film Capacitors

Enhanced Dielectric Nonlinearity with Controlled Domain Nucleation in Ferroelectric Thin Films

Hierarchical Domain Structure and Extremely Large Wall Current in Epitaxial BiFeO3 Thin Films

Temporary Formation of Highly Conducting Domain Walls for Non-Destructive Read-out of Ferroelectric Domain-Wall Resistance Switching Memories.

Bimodal polymorphic nanodomains in ferroelectric films for giant energy storage

Thickening of Non-Ferroelectric Capacitive Layers with Enhanced Domain Switching Speed in Polyvinylidence Fluoride Copolymer Thin Films

Atomic-scale Mechanisms of Ferroelastic Domain-Wall-mediated Ferroelectric Switching

Ferroelastic‐Domain‐Assisted Mechanical Switching of Ferroelectric Domains in Pb(Zr,Ti)O3 Thin Films

Topologically Protected Ferroelectric Domain Wall Memory with Large Readout Current

Mechanical Manipulation of Nano‐Twinned Ferroelectric Domain Structures for Multilevel Data Storage

Phase Field Simulation of Charged Interface Formation During Ferroelectric Switching

Ultrahigh Energy Storage Density in Glassy Ferroelectric Thin Films under Low Electric Field

Resonant domain-wall-enhanced tunable microwave ferroelectrics

Low-voltage Operation of High-Density Ferroelectric Domain Wall Memory