Abstract:Molybdenum disulfide (MoS$_2$) nanoribbons have attracted increased interest due to their properties which can be tailored by tuning their dimensions. Herein, we demonstrate the growth of highly crystalline quasi-one-dimensional (1D)MoS$_2$ nanoribbons and aligned 3D triangular crystals with predominantly 3R or 2H stacking orientation. The synthesis method relies on the reaction between an ultra-thin MoO3-x film grown by Pulsed Laser Deposition (PLD) and NaF in a sulfur-rich environment. The quasi-1D MoS$_2$ nanoribbons can reach several micrometres in length, and feature single-layer (1L) edges aligned with the nanoribbon core, thereby forming a 1L-multilayer (ML) homojunction due to abrupt discontinuity in thickness. The 1L edges of the nanostructures show a pronounced second harmonic generation (SHG) due to the symmetry breaking, in contrast to the centrosymmetric ML structure, which is unsusceptible to the second-order nonlinear process. A pronounced splitting of the Raman spectra was observed in quasi-1D MoS$_2$ nanoribbons arising from distinct contributions from the 2D edges and a multilayer core. Nanoscale imaging reveals the blue-shifted exciton emission of the monolayer nanoribbon compared to the triangular MoS$_2$ counterpart due to built-in local strain and disorder. We further report on a versatile and ultrasensitive photodetector made of a single quasi-1D MoS$_2$ nanoribbon with a maximum responsivity of 872 A/W at the wavelength of 532 nm. The optoelectronic performance of the MoS$_2$ nanoribbon is superior to the previously reported single-nanoribbon photodetectors. Our findings can inspire the design of TMD semiconductors with tunable geometries for efficient optoelectronic devices.

Synthesis of single-crystalline GeS nanoribbons for high sensitivity visible-light photodetectors

Supporting information Single-crystalline GeS nanoribbons for high sensitivity visible-light photodetectors

One-step synthesis of p-type GaSe nanoribbons and their excellent performance in photodetectors and phototransistors

Visible-NIR Photodetectors Based on Low-Dimensional GeSe Micro-Crystals: Designed Morphology and Improved Photoresponsivity.

NIR Schottky Photodetectors Based on Individual Single-Crystalline GeSe Nanosheet

High‐Performance Visible to Near‐Infrared Broadband Bi2O2Se Nanoribbon Photodetectors

Solution Synthesis of Ultrathin Single-Crystalline SnS Nanoribbons for Photodetectors Via Phase Transition and Surface Processing.

A High-Performance Quasi-1D MoS$_2$ Nanoribbon Photodetector

Single-crystalline In2S3nanowire-based Flexible Visible-Light Photodetectors with an Ultra-High Photoresponse

Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors

Room-temperature Near-Infrared Photodetectors Based on Single Heterojunction Nanowires.

Flexible Photodetectors with Single-Crystalline GaTe Nanowires

Highly Responsive Ultrathin GaS Nanosheet Photodetectors on Rigid and Flexible Substrates

Near-Field Detected Photoluminescence Spectra of Sds(0.65)Se(0.35) Nanoribbon at Room Temperature

High-performance blue-light photodetectors based on single-crystal znse nanoribbons with controlled gallium doping

Synthesis of single crystalline GaN nanoribbons on sapphire (0001) substrates

Germanium Quantum Dot Infrared Photodetectors Addressed by Self-Aligned Silicon Nanowire Electrodes.

Facile synthesis of hybrid nanorods with the Sb2Se3/AgSbSe2 heterojunction structure for high performance photodetectors.

High Performance Rigid and Flexible Visible-Light Photodetectors Based on Aligned X(In, Ga)P Nanowire Arrays

Facile Microwave-Assisted Synthesis of Uniform Sb2Se3nanowires for High Performance Photodetectors

Single Crystalline GeSe Van Der Waals Ribbons With Uniform Layer Stacking, High Carrier Mobility, and Adjustable Edge Morphology