Abstract:Electrical characterization of semiconducting oxide nanowires (NWs) is mostly performed using complex techniques, which necessitates a series of costly nanofabrication procedures. In this work, with the aim to provide a low-cost, feasible, facile, and reproducible approach for enabling the study of NW electrical properties, we report direct electrical measurements on individual and overlapped suspended zinc oxide NWs (ZnO NWs). We have succeeded in constructing both two- and three-terminal devices simply by employing tungsten (W) nanoprobes with the aid of a nanomanipulation system embedded inside a scanning electron microscope’s vacuum chamber. Stable contacts were established using the Joule heating effect and e-beam exposure at the junctions between the NW and the pre-cleaned W tips. P-channel field-effect transistor devices were achieved with an on–off current ratio of ∼101, a threshold voltage (>1.5 V), a transconductance of ∼16 μS, a sub-threshold swing of ∼220 mV/decade, and field-effect carrier mobility roughly estimated to be around 926.4 cm2/(V·s) after correction for contact resistances/optimization. The average resistivity of ZnO NWs was calculated to be ∼2.23 × 10–2 Ω·cm for NWs with diameters between 70 and 500 nm. Besides, we have demonstrated a contact resistance of ∼19.60 kΩ and a Schottky barrier height of ∼0.37 eV present at W/ZnO NW interfaces. The contact resistance between two overlapped ZnO NWs was estimated to be ∼283 kΩ, which is relatively higher than that offered between W/ZnO NWs. This work provides a solid experimental procedure to address true intrinsic electrical properties at metal/semiconductor interfaces, and our findings have potential applications in next-generation 3D suspended ZnO NW-based nanoelectronic devices.

Automated Electrical Measurements of Single ZnO Nanowire with Cu and Au Electrodes Under Axial Strain

Exceptional Deformability of Wurtzite Zinc Oxide Nanowires with Growth Axial Stacking Faults

General Existence of Flexural Mode Doublets in Nanowires Targeting Vectorial Sensing Applications

In Situ Observation of High Bending Strain Recoverability in Au Nanowires

Asymmetrical quantum dot growth on tensile and compressive-strained ZnO nanowire surfaces

Characterization of Electrical Properties of Suspended ZnO Nanowires Using a Nanorobotic Manipulation System Inside a Scanning Electron Microscope for Nanoelectronic Applications

Measuring the Electrical Characteristics of Individual Junctions in the SnO2 Capped ZnO Nanowire Arrays on Zn Substrate

Asymmetric Behavior in Flexible Piezoelectric Strain Sensors Made of Single Zno Nanowires

Mechanical/Electrical Characterization of ZnO Nanomaterial Based on AFM/Nanomanipulator Embedded in SEM

Bandgap engineering and manipulating electronic and optical properties of ZnO nanowires by uniaxial strain.

Deformation of Copper Nanowire under Coupled Tension–Torsion Loading

Strain Loading Mode Dependent Bandgap Deformation Potential in Zno Micro/Nanowires

In situ nanomechanical measurement of Cu nanowires

Effects of Mechanical Strain on Optical Properties of ZnO Nanowire

Ultrahigh Sensitive Piezotronic Strain Sensors Based on a ZnSnO3 Nanowire/microwire.

Electrical Actuation and Readout in a Nanoelectromechanical Resonator Based on a Laterally Suspended Zinc Oxide Nanowire

Lattice Dynamics of Twisted ZnO Nanowires under Generalized Born–von Karman Boundary Conditions

In Situ Probing Electrical Response on Bending of ZnO Nanowires Inside Transmission Electron Microscope

Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor

Unexpected Optical Response of Single Zno Nanowires Probed Using Controllable Electrical Contacts

Mechanical Behavior Enhancement of ZnO Nanowire by Embedding Different Nanowires