Photo-electrical Properties of Single Cu-TCNQ Nanowire

Sun Sheng-sheng,Zhang Hua-qiang,Wang Qiang,Yu Jia-xin,Tian Zhao-shuo,Ren Xiu-yun,Zhao Jing,Liu Zhe,Li Jun-jie
DOI: https://doi.org/10.1088/2053-1591/1/4/045036
IF: 2.025
2014-01-01
Materials Research Express
Abstract:In this letter, photo-electrical transport properties of individual Cu-TCNQ nanowire are studied. The electronic transport mechanism for single Cu-TCNQ nanowire well follows one-dimensional (1D) Mott's model in the temperature range from 80 to 300 K. The Cu-TCNQ nanowire shows photoconductivity at visible illumination, with much faster response time than recovery time. The thermionic emission (TE) and thermionic-field emission (TFE) models are employed to interpret the current versus voltage (I-V) plots, by considering fitted results for the reversely biased contact barriers. Our present work opens up potential applications of single Cu-TCNQ nanowire in organic photo-electric nanodevice.
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