Effects of Ga Doping and Hollow Structure on the Band-Structures and Photovoltaic Properties of SnO2 Photoanode Dye-Sensitized Solar Cells

Yandong Duan,Jiaxin Zheng,Nianqing Fu,Jiangtao Hu,Tongchao Liu,Yanyan Fang,Qian Zhang,Xiaowen Zhou,Yuan Lin,Feng Pan
DOI: https://doi.org/10.1039/c5ra19491a
IF: 4.036
2015-01-01
RSC Advances
Abstract:By introducing the rough hollow microspheres structure and Ga-doping technique, a high power conversion efficiency (η) up to 7.11% is obtained for SnO2 based DSSCs.
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