Large-Gap Quantum Spin Hall States In Decorated Stanene Grown On A Substrate

yong xu,peizhe tang,shoucheng zhang

DOI: https://doi.org/10.1103/PhysRevB.92.081112

IF: 3.7

2015-01-01

Physical Review B

Abstract:Two-dimensional stanene is a promising candidate material for realizing a room-temperature quantum spin Hall (QSH) effect. Monolayer stanene has recently been fabricated by molecular beam epitaxy, but shows metallic features on a Bi2Te3(111) substrate, which motivates us to study the important influence of the substrate. Based on first-principles calculations, we find that varying substrate conditions considerably tunes the electronic properties of stanene. The supported stanene gives either trivial or QSH states, with significant Rashba splitting induced by inversion asymmetry. More importantly, large-gap (up to 0.3 eV) QSH states are realizable when growing stanene on various substrates, like the anion-terminated (111) surfaces of SrTe, PbTe, BaSe, and BaTe. These findings provide significant guidance for future research of stanene and large-gap QSH states.