Abstract:Two-dimensional (2D) group-IV materials with tetragonal structures have attracted considerable attention recently due to their structural stability and distinctive electronic and optical characteristics. However, topological quantum states, particularly second-order topological insulators (SOTIs), are seldom reported in them. Based on first-principles and tight-binding (TB) model calculations, we find that 2D hydrogenated tetragonal stanene (T-SnH) is an exotic SOTI, identified by the second Stiefel-Whitney number w2 = 1, along with robust corner states. Intriguingly, the SOTI in T-SnH transforms into a quantum spin Hall insulator under 2.7% tensile strain. The same topological phase transition can also occur by substituting the Sn element with the Pb element, namely, forming a T-PbH monolayer. A three-orbital TB model is constructed to understand the phase transition mechanism for the two schemes, both associated with band inversion between antibonding s and bonding px,y states due to the large Sn-Sn (or Pb-Pb) bond lengths. The phase transition is also rationalized well from topological quantum chemistry theory. These insights are helpful for understanding the SOTI and provide a promising material platform for topological quantum device designs and applications.

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Large-gap Quantum Spin Hall Insulators in Tin Films

Room Temperature Quantum Spin Hall Insulator in Ethynyl-Derivative Functionalized Stanene Films

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Second-order Topological Insulator and Its Transition to Quantum Spin Hall State in a Hydrogenated Tetragonal Stanene

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Time-Reversal Symmetry Protected Chiral Interface States Between Quantum Spin And Quantum Anomalous Hall Insulators

Recent Advances in Tin: from Two-Dimensional Quantum Spin Hall Insulator to Bulk Dirac Semimetal.

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Quantum Spin Hall Insulators in Chemically Functionalized As (110) and Sb (110) Films

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Experimental Evidence of the Thickness- and Electric-Field-dependent Topological Phase Transitions in Topological Crystalline Insulator SnTe(111) Thin Films

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