Abstract:Inspired by the successfully experimental realization of graphene,other ultrathin materials consisting of group-IV elements Si,Ge and Sn have been attracted plenty of interests due to their unprecedented electronic properties.Among them,two-dimensional low-buckled Sn-based stanene and its derivatives present novel quantum properties due to its large spin-orbital coupling,such as a quantum spin Hall insulating behaviour with a very large band gap,and the capability to support enhanced thermoelectric performance,topological superconductivity and the near-room-temperature quantum anomalous Hall effect and so on.Therefore,stanene shows the great application potentials in the dissipationless electric conduction at room temperature,high performance thermoelectricity,spintronics and topological quantum computation.This review will briefly introduce the recent progress in the study of stanene both in theory and in experiment.Firstly,we will discuss the main motivation on study of the stanene.Tin (Sn) is a heavy element and stanene has the low-buckled honeycomb-like crystal structure,which makes its spin-orbital coupling strong enough to realize a quantum spin Hall state with a large energy gap of about 0.1 eV.The large bulk gap makes stanene the excellent candidate to explore the topological quantum properties of a quantum spin Hall insulator above the cryogenic temperature.Secondly,we will briefly introduce the theoretical calculations or predictions of the crystal and electronic structures of stanene.First-principle calculations show that the honeycomb-like low-buckled crystal structure of two-dimensional stanene is stable and could be realized experimentally in principle.Due to the sp3 orbitals in stanene,it has dangling bonds that can be modified by surface decoration.Long range ferromagnetic order,topological superconductivity and largely enhanced bulk energy gap (up to ～ 0.3 eV) can be achieved by proper surface decoration theoretically.Topological transition can also induced by hydrogen absorption.Thirdly,we will discuss the first experimental realization of the monolayer stanene films with low-buckled crystal structure using molecular beam epitaxy method on the Bi2Te3 single crystalline substrates,which brings the stanene to the real word and inspires more and more theoretical predictions.The crystal structure of epitaxial growth stanene was determined by scanning tunneling spectroscopy and its electronic structure was measured by angle-resolved photoemission spectroscopy.Due to the charge transfer between the epitaxial stanene and the Bi2Te3 substrate,stanene film on Bi2Te3 is not an insulator.It is hole-doped.At last,we will introduce some very recent theoretical works on how to improve stanene films beyond the current experimental achievements.Based on new proposals,new experiments could be done on the stanene films.For example,new substrate has been proposed by first-principle calculations to get high-quality stanene films with much larger area;other quantum orders such as ferromagnetism and superconductivity can be realized through surface decoration or electron doping,which can be tested using low-temperature scanning tunneling spectroscopy.Very low thermal conductivity was founded in theory in stanene,which is another very interesting experiment.Finally,new insulating substrates has been suggested by first-principle calculations to obtain insulating stanene films that can be used to study the electric transport properties of the topological one-dimensional edge states.More experiments could be carded out along this direction.

Realizing an Epitaxial Decorated Stanene with an Insulating Bandgap

Realizing an Epitaxial Stanene with an Insulating Bandgap

Epitaxial growth of ultraflat stanene with topological band inversion

Molecular Beam Epitaxy Growth of Few-Layer Stanene

Epitaxial growth and electronic properties of few-layer stanene on InSb (1 1 1)

Kinetic Pathways Towards Mass Production Of Single Crystalline Stanene On Topological Insulator Substrates

High-buckled R3 Stanene with Topologically Nontrivial Energy Gap

Epitaxial Growth And Electronic Properties Of Few-Layer Stanene On Insb (111)

Recent Progress in the Study of Stanene

Epitaxial Growth of Two-Dimensional Stanene

Large-Gap Quantum Spin Hall States In Decorated Stanene Grown On A Substrate

Robust Topological Edge States and Superconductivity in Few-Layer Stanene

Phase Engineering of Epitaxial Stanene on a Surface Alloy

High-buckled \\sqrt 3 × \\sqrt 3 stanene with a topologically nontrivial energy gap

Coexistence of Robust Edge States and Superconductivity in Few-Layer Stanene

High-buckled 3×3 Stanene with a Topologically Nontrivial Energy Gap

Comparative Study on Epitaxial Growth of Stanene and Bismuthene on InSb(111) Substrate

Combining quantum spin hall effect and superconductivity in few-layer stanene

Hydrogen-assisted layer-by-layer growth and robust nontrivial topology of stanene films on Bi(111)

Engineering ideal helical topological networks in stanene via Zn decoration

High-buckled 3×3 stanene with a topologically nontrivial energy gap