Band Engineering Via Biaxial Strain for Enhanced Thermoelectric Performance in Stannite-Type Cu2ZnSnSe4

Daifeng Zou,Guozheng Nie,Yu Li,Ying Xu,Jianguo Lin,Hairong Zheng,Jiangyu Li

DOI: https://doi.org/10.1039/c5ra00477b

IF: 4.036

2015-01-01

RSC Advances

Abstract:The enhancement of the thermoelectric properties of stannite-type Cu2ZnSnSe4 under biaxial strain can be ascribed to band convergence of the valence bands near the Fermi level.

What problem does this paper attempt to address?

Strain-induced Ferroelectricity and Lattice Coupling in BaSnO3 and SrSnO3.

Yajun Zhang,Jie Wang,M. P. K. Sahoo,Takahiro Shimada,Takayuki Kitamura

DOI: https://doi.org/10.1039/c7cp03952b

2017-01-01

Abstract:Perovskite stannates such as BaSnO3 and SrSnO3 exhibit promising photovoltaic properties, and hold promise for application in solar cell devices. However, the lack of ferroelectricity and the wide band gap in these materials limit their potential for photovoltaic applications. Here, by first-principles calculations, we demonstrate the realization of a primary ferroelectric polarization in non-ferroelectric BaSnO3 and SrSnO3 through strain engineering. In addition to the appearance of polarization, the band gaps of the materials are greatly narrowed when the paraelectric to ferroelectric phase transition takes place under compressive strain. Furthermore, an intriguing Q2 mode triggered by lattice coupling with the polar mode is found in the stannates subjected to a sufficient tensile strain and this mode has a significant effect on the band gap, which suggests another pathway to narrow the band gap through the electric field control of the Q2 mode. The fruitful electronic, structural, and energetic properties are discussed in detail to achieve a fundamental understanding of the strain-induced ferroelectricity, tunable band gap, and lattice couplings between the Q2 mode and different polar/rotational distortions in the perovskite stannates.
Remarkable Enhancement in Thermoelectric Performance of BiCuSeO Through Biaxial Strain Modulation

Chunhong Li,Donglin Guo,Kejian Li,Bin Shao,Dengming Chen,Yilong Ma,Jianchun Sun

DOI: https://doi.org/10.1016/j.physe.2017.12.017

IF: 3.369

2018-01-01

Physica E Low-dimensional Systems and Nanostructures

Abstract:We propose to further enhance the thermoelectric performance of BiCuSeO using the biaxial strain. The effect of biaxial strain on the thermoelectric property of BiCuSeO is investigated by using the first-principles calculations combined with the Semiclaasical Boltzmann theory. When the biaxial strain is applied, the Seebeck coefficient is largely enhanced by tensile strain, while the electrical conductivity can be greatly enhanced by compressive strain. The largest zT value of 1.7 at 900 K is then conservatively estimated by using the experimental thermal conductivity, which is 4 times larger than that without biaxial strain. Our results indicate that the biaxial strain could be an effect method to enhance the thermoelectric performance of BiCuSeO.
Biaxial Strain Improving the Thermoelectric Performance of a Two-Dimensional MoS 2 /WS 2 Heterostructure

Xin Zhao,Guihua Tang,Yifei Li,Min Zhang,Yinan Nie

DOI: https://doi.org/10.1021/acsaelm.1c00187

IF: 4.494

2021-06-30

ACS Applied Electronic Materials

Abstract:The strain-sensitive heterostructure, as a type of low-dimensional technique, has attracted extensive attention, but the influence mechanism of the biaxial strain on its thermoelectric properties is still unclear. In this paper, the first principles based on density functional theory and the BoltzTrap transport equation with relaxation time calculated by deformation potential theory are employed to figure out the biaxial strain effect on the band structure and transport performance of the MoS2/WS2 heterostructure. The lattice thermal conductivity under different strains is also investigated through nonequilibrium molecular dynamics. The results indicate that the strain-induced convergence of the valence and conduction bands can significantly improve the Seebeck coefficient of p- and n-type doping systems, respectively. The effective mass also changes with a tunable band structure, which increases the electrical conductivity under the tensile strain. Additionally, the biaxial strain is beneficial to reduce the lattice thermal conductivity. The final figure of merit significantly increases at large strains or at strains where band convergence can be achieved. This work shows that the biaxial strain is a highly efficient strategy to increase the thermoelectric properties of heterostructures.This article has not yet been cited by other publications.

materials science, multidisciplinary,engineering, electrical & electronic
Biaxial Tensile Strain-Induced Enhancement of Thermoelectric Efficiency of α-Phase Se2Te and SeTe2 Monolayers

Shao-Bo Chen,Gang Liu,Wan-Jun Yan,Cui-E Hu,Xiang-Rong Chen,Hua-Yun Geng

DOI: https://doi.org/10.3390/nano12010040

IF: 5.3

2021-12-23

Nanomaterials

Abstract:Thermoelectric (TE) materials can convert waste heat into electrical energy, which has attracted great interest in recent years. In this paper, the effect of biaxial-tensile strain on the electronic properties, lattice thermal conductivity, and thermoelectric performance of α-phase Se2Te and SeTe2 monolayers are calculated based on density-functional theory and the semiclassical Boltzmann theory. The calculated results show that the tensile strain reduces the bandgap because the bond length between atoms enlarges. Moreover, the tensile strain strengthens the scatting rate while it weakens the group velocity and softens the phonon model, leading to lower lattice thermal conductivity kl. Simultaneously, combined with the weakened kl, the tensile strain can also effectively modulate the electronic transport coefficients, such as the electronic conductivity, Seebeck coefficient, and electronic thermal conductivity, to greatly enhance the ZT value. In particular, the maximum n-type doping ZT under 1% and 3% strain increases up to six and five times higher than the corresponding ZT without strain for the Se2Te and SeTe2 monolayers, respectively. Our calculations indicated that the tensile strain can effectively enhance the thermoelectric efficiency of Se2Te and SeTe2 monolayers and they have great potential as TE materials.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Thermoelectric Properties of Strained -Cu2Se

Wei Cao,Ziyu Wang,Ling Miao,Jing Shi,Rui Xiong

DOI: https://doi.org/10.1021/acsami.1c08686

IF: 9.5

2021-01-01

ACS Applied Materials & Interfaces

Abstract:In recent years, the high-temperature phase of Cu2Se, namely, beta-Cu2Se, has attracted increasing attention due to its outstanding thermoelectric efficiency. The Cu ions in beta-Cu2Se show a distinct ion-liquid behavior between the framework of a Se ion lattice. Many experimental operations may lead to a discrepancy in the lattice structure. Experimentally synthesized beta-Cu2Se was p-type, and a thermoelectric device needs both p-type and n-type materials with a close figure of merit. Studying the effect of strain and the possibility of n-type beta-Cu2Se is essential. Utilizing first-principles calculations and molecular dynamics simulations, we investigate the thermoelectric performance of strained beta-Cu2Se. The results show that the n-type beta-Cu2Se can exhibit superior zT values like the p-type one. Applying compressive strain is an effective way to promote the power factor. The tensile strain will lead to a low lattice thermal conductivity and thus boost the p-type zT values. The predicted maximum zT values for n-type and p-type beta-Cu2Se can reach 1.65 and 1.71 at 800 K, respectively. Considering the fact that applying strain is challenging in experiments, we propose a feasible strategy to manipulate the lattice structure and carrier type: doping halogen elements. Our results provide a guide for Cu2Se-based thermoelectric devices.
Enhanced Out-of-plane Thermoelectric Performance of Cmcm SnSe Phase by Uniaxial Strain

Donglin Guo,Chunhong Li,Qiqi Yang,Kejian Li,Bin Shao,Dengming Chen,Yilong Ma,Jianchun Sun,Xianlong Cao,Wen Zeng,Zhongchang Wang,Haie Zhu

DOI: https://doi.org/10.1016/j.physleta.2019.126002

IF: 2.707

2019-01-01

Physics Letters A

Abstract:The electronic structure and thermoelectric property of SnSe are calculated by first-principles methods and Boltzmann transport theory. The deformation potential approximation and single parabolic band model are employed to compute the relaxation time. Owing to the accurate electronic structure calculated by Tran-Blaha modified Becke-Johnson (TB-mBJ) potential, the theoretical data (Seebeck coefficient, electrical conductivity and figure of merit ZT) are in good agreement with experimental data. Results show that the uniaxial strain not only affects the electrical structure, but also changes the thermal conductivity. As the uniaxial strain increases, the band gap, density of states of mass (mdos) and inertia mass (mI) also increases, indicating that the Seebeck coefficient S increases, while the electrical conductivity σ decreases. At carrier concentration of 3×1018 cm−3, 4×1018 cm−3, 5×1018 cm−3, 6×1018 cm−3 and 7×1018 cm−3, the corresponding optimal value of ZT is 1.91, 2.78, 3.51, 4.17 and 4.73, respectively. These results show that the strain not only leads to a lower elastic property, which causes the phonon modes softening and phonon propagation slowing down, but also enhances the conduction band minimum (CBM) convergence, which improves the Seebeck coefficient. This work provides insightful data to understand the enhanced thermoelectric properties of SnSe induced by the strain.
Strain Engineering for 2D Ferroelectricity in Lead Chalcogenides

Tao Xu,Xiaoyuan Wang,Jiawei Mai,Jingtong Zhang,Jie Wang,Tong-Yi Zhang

DOI: https://doi.org/10.1002/aelm.201900932

IF: 6.2

2019-01-01

Advanced Electronic Materials

Abstract:The quest for new 2D ferroelectric materials continues to arouse interest. Based on first-principles calculations, here, 2D ferroelectric properties in lead chalcogenides PbXs (X = S, Se, and Te) with a thickness of two atomic layers via strain engineering is demonstrated. Although these materials are stable in a rocksalt-type cubic structure and are intrinsically nonferroelectric materials, an appropriate mechanical strain can readily activate a paraelectric to ferroelectric phase transition and induce in-plane electric polarization in these atomic layers. The induced polarization magnitude can be as large as 1.90 x 10(-10) C m(-1) at a biaxial strain of epsilon = 4.0%, which is comparable in magnitude to that of ultrathin ferroelectric SnTe. The Curie temperature T-c of the materials is also estimated using effective Hamiltonian simulations. The origin of the emerged ferroelectric phase is attributed to softening of the polar mode with applied strain. In addition, the band gaps of the crystals are found to be tunable with applied strain, which can be adjusted to the ideal value of 1.3 eV for photovoltaic applications. The results not only provide a new route to explore ferroelectricity in 2D materials but also suggest promising semiconducting ferroelectrics for solar applications.
Band Structure Engineering of Bi4O4SeCl2 for Thermoelectric Applications

Jon A. Newnham,Tianqi Zhao,Quinn D. Gibson,Troy D. Manning,Marco Zanella,Elisabetta Mariani,Luke M. Daniels,Jonathan Alaria,John B. Claridge,Furio Corà,Matthew J. Rosseinsky

DOI: https://doi.org/10.1021/acsorginorgau.2c00018

2022-01-01

Abstract:The mixed anion material Bi4O4SeCl2 has an ultralow thermal conductivity of 0.1 W m-1 K-1 along its stacking axis (c axis) at room temperature, which makes it an ideal candidate for electronic band structure optimization via doping to improve its thermoelectric performance. Here, we design and realize an optimal doping strategy for Bi4O4SeCl2 from first principles and predict an enhancement in the density of states at the Fermi level of the material upon Sn and Ge doping. Experimental work realizes the as-predicted behavior in Bi4-x Sn x O4SeCl2 (x = 0.01) through the precise control of composition. Careful consideration of multiple accessible dopant sites and charge states allows for the effective computational screening of dopants for thermoelectric properties in Bi4O4SeCl2 and may be a suitable route for assessing other candidate materials.
Biaxial strain tuned thermoelectric properties in monolayer $\mathrm{PtSe_2}$

San-Dong Guo,Lun Zhang

DOI: https://doi.org/10.48550/arXiv.1607.04979

2016-07-18

Abstract:Strain engineering is a very effective method to tune electronic, optical, topological and thermoelectric properties of materials. In this work, we systematically study biaxial strain dependence of electronic structures and thermoelectric properties (both electron and phonon parts) of monolayer $\mathrm{PtSe_2}$ with generalized gradient approximation (GGA) plus spin-orbit coupling (SOC) for electron part and GGA for phonon part. Calculated results show that compressive or tensile strain can induce conduction band minimum (CBM) or valence band maximum (VBM) transition, which produces important effects on Seebeck coefficient. It is found that compressive or tensile strain can induce significantly enhanced n- or p-type Seebeck coefficient at the critical strain of CBM or VBM transition, which can be explained by strain-induced band convergence. Another essential strain effect is that tensile strain can produce significantly reduced lattice thermal conductivity, and the room temperature lattice thermal conductivity at the strain of -4.02\% can decrease by about 60\% compared to unstrained one, which is very favorable for high $ZT$. To estimate efficiency of thermoelectric conversion, the figure of merit $ZT$ can be obtained by empirical scattering time $\tau$. Calculated $ZT$ values show that strain indeed is a very effective strategy to achieve enhanced thermoelectric properties, especially for p-type doping. Tuning thermoelectric properties with strain also can be applied to other semiconducting transition-metal dichalcogenide monolayers $\mathrm{MX_2}$ (M=Zr, Hf, Mo, W and Pt; X=S, Se and Te).

Materials Science
Band and microstructure engineering toward high thermoelectric performance in SnTe

Jingli Xu,Zizhen Zhou,Kaiqi Zhang,Ting Zhao,Yiqing Wei,Bin Zhang,Honghui Wang,Xu Lu,Xiaoyuan Zhou

DOI: https://doi.org/10.1039/d4ta03729d

IF: 11.9

2024-01-01

Journal of Materials Chemistry A

Abstract:AgBiS 2 alloying combining with Ge doping facilitates the band convergence and suppresses the phonon transport, leading to a competitive zT of 1.6 in SnTe.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Improving Thermoelectric Performance of Asymmetrical Janus 1T-Snsse Monolayer by the Synergistic Effect of Band Convergence and Crystal Lattice Softening under Strain Engineering

Shuwei Tang,Shulin Bai,Mengxiu Wu,Dongming Luo,Jingyi Zhang,Dongyang Wang,Shaobin Yang,Li-Dong Zhao

DOI: https://doi.org/10.1016/j.mtphys.2022.100923

IF: 11.021

2022-01-01

Materials Today Physics

Abstract:Recently, the 1T-SnSSe monolayer has attracted increasing attention in the thermoelectric community on ac-count of its low-cost and environmental friendliness. In this paper, the thermoelectric properties of asymmetrical 1T-SnSSe monolayer under strain engineering are comprehensively evaluated using density functional theory (DFT) and semiclassical Boltzmann transport theory calculations. The analysis of mechanical stability, phonon spectrum, and ab initio molecular dynamics (AIMD) simulations demonstrates that the strained 1T-SnSSe monolayers are mechanically, dynamically, and thermally stable. The improvement of the Seebeck coefficient for the strained 1T-SnSSe monolayers mainly originates from the band convergence. Meanwhile, the thermal transport properties of the strained 1T-SnSSe monolayers are suppressed by crystal lattice softening. As a result, the optimal ZT of-1.75 and-1.56 @ 900 K for the p-type and n-type 1T-SnSSe monolayers are obtained at the biaxial tensile strain of 6% with the optimal carrier concentrations of-1 x 1014 and-2 x 1013 cm-2. Our present work not only provides a fundamental understanding of electronic and thermal transport properties of the strained 1T-SnSSe monolayers, but also sheds some light on the theoretical exploration of low-dimensional nanomaterials for thermoelectric applications.
Effect of biaxial tensile strain on the thermoelectric properties of monolayer ZrTiCO 2

Zi-Qi Sun,Wen-Li Chang,Zi-Meng Zhang,Xin-Huan He,Ji-Long Zhang,Xiao-Ping Wei,Xiaoma Tao

DOI: https://doi.org/10.1088/1402-4896/ad4515

2024-05-18

Physica Scripta

Abstract:Using ab-initio calculation principle calculations, we investigate the effect of biaxial tensile strain on the stability and electronic properties of the two-dimensional double transition metal MXenes ZrTiCO 2 . The monolayer ZrTiCO 2 has stability and semiconducting properties under different strain conditions. The results of thermoelectric properties under other strain conditions calculated by Boltzmann transport theory and Slack model show that biaxial tensile strain can improve the electrical transport properties of monolayer ZrTiCO 2 materials and lead to the decrease of lattice thermal conductivity. The thermoelectric efficiency of a material can be evaluated using the figure of merit ZT. The n-type ZrTiCO 2 has a maximum ZT value of 1.49 at 900 K without adding biaxial strain and reaches a ZT value of 2.86 with 2% biaxial strain. The monolayer ZrTiCO 2 material has the potential to become a thermoelectric material, and its thermoelectric properties can be improved by biaxial tensile strain.

physics, multidisciplinary
The Strain-Induced Excellent Thermoelectric Performance of PbTe

Donglin Guo,Chunhong Li,Kejian Li,Bin Shao,Dengming Chen,Yilong Ma,Jianchun Sun,Xianlong Cao,Wen Zeng,Rui Yang

DOI: https://doi.org/10.1016/j.physe.2021.114685

IF: 3.369

2021-01-01

Physica E Low-dimensional Systems and Nanostructures

Abstract:Through Density functional theory and Boltzmann transport theory, the ideal strength, electronic structure, elastic constants and thermoelectric performance of cubic phase PbTe are investigated. When the compressive strain is applied, both band gap and Seebeck coefficient decrease, while the electrical conductivity, power factor, thermal conductivity and ZT increase. According to the ZT of PbTe, the thermoelectric performance of p type is superior to that of n type. The optimal ZT value of p type could reach 3.88 at 0.5% strain, while the optimal ZT value of n type could reach 3.05 at 2.0% strain. Compared to the thermoelectric performance without strain, the thermoelectric performance under strain could be significantly improved, indicating that the strain engineering could be an effective strategy to improve the thermoelectric performance of PbTe.
Lattice Strain and Band Overlap of the Thermoelectric Composite Mg2Si1−xSnx

Wenliang Yao,Shunbo Hu,Fanhao Jia,Jeffrey R. Reimers,Yin Wang,David J. Singh,Wei Ren

DOI: https://doi.org/10.1103/physrevb.106.104303

IF: 3.7

2022-01-01

Physical Review B

Abstract:Mg2Si1-xSnx solid solutions show enhanced thermoelectric performance when the Sn mole fraction x is approximately x = 0.7. This has been discussed in terms of complexity of the electronic structure arising from the crossover of two bottom conduction bands, but direct detailed understanding of the origins and the precise nature of this band convergence is limited. Here, we report first-principles calculations of the band edge changes analyzed by band unfolding and crystal orbital Hamilton population techniques. We find that strain is particularly important at this crossing. Mg2Si and Mg2Sn show opposite trends in the conduction band edge shifts leading to a band crossover at x similar to 0.625. However, there are also important effects due to disorder. Transport calculations show that enhancement of the figure of merit ZT value owes to the combined effects of lattice strain, band edge overlap, composition change, and disorder.
Enhanced Thermoelectric Performance of Stibium and Bismuth Co-Doped SnTe Via Melt Spinning

Xuefeng Cao,Han Cheng,Yuqiu Bai,Zhaosen Zhou,Yang Zhou,Xiao Zhang,Xiangnan Gong

DOI: https://doi.org/10.1142/s1793604721500235

IF: 1.4901

2021-01-01

Functional Materials Letters

Abstract:In this work, the thermoelectric (TE) performance of [Formula: see text]-type SnTe based on melt spinning (MS) technology is comprehensively researched. Elements of Sb and Bi are introduced to significantly improve the electrical transport properties. Along with the fine grains, SnTe-based ribbons can be obtained in a short time by MS method. It indicates that the MS technology improves the sample preparation efficiency and reduces the lattice thermal conductivity. The melt-spun one reveals that the lowest lattice thermal conductivity of Sn[Formula: see text]Sb[Formula: see text]Bi[Formula: see text]Te is 0.87 W m[Formula: see text]K[Formula: see text]at 323 K. To optimize the ZT (where [Formula: see text] is the figure of merit and [Formula: see text] is Kelvin temperature) of SnTe, Sb and Bi are codoped in SnTe matrix, as a result of the enhancement of the power factor (PF) value and decreasing the thermal conductivity and electronic thermal conductivity simultaneously. Finally, the highest ZT of 1.01 at 823 K and an average ZT of 0.57 is obtained over a broad temperature range from 323 K to 823 K in Sn[Formula: see text]Sb[Formula: see text]Bi[Formula: see text]Te. It is worth noting that the remarkable improvement on the TE performance of pristine SnTe sample is achieved, with the highest ZT of 0.55 at 823 K and an average ZT of 0.18. It shows the potential for following research on the performance of lead-free SnTe-based TE materials.
Manipulating Band Convergence and Resonant State in Thermoelectric Material SnTe by Mn–In Codoping

Ling Wang,Xiaojian Tan,Guoqiang Liu,Jingtao Xu,Hezhu Shao,Bo Yu,Haochuan Jiang,Song Yue,Jun Jiang

DOI: https://doi.org/10.1021/acsenergylett.7b00285

IF: 22

2017-01-01

ACS Energy Letters

Abstract:We report an enhanced thermoelectric performance by manipulating band engineering in Mn-In codoped SnTe. It has been revealed that SnTe is a unique example achieving the synergy of band convergence and resonant state. According to band theory, band convergence favors heavy doping, while resonant state favors light doping. Following this idea, a series of Mn-In codoped SnTe samples are prepared by hot pressing. A significantly enhanced Seebeck coefficient of 116 mu V K-1 at 300 K is observed in Sn0.915Mn0.11 In0.005Te. By carefully tuning the band structure of the solid solution, we achieve a high ZT(max) of 1.15 at 823 K and an overall enhanced ZT(ave) of 0.62. The improved thermoelectric performance in a large temperature range leads to a competitive conversion efficiency of 10.1% with T-c = 300 K and T-h = 850 K, suggesting Mn-In codoped SnTe is a promising candidate for medium-temperature thermoelectric applications.
Leveraging the Cu 2 SnTe 3 additive for an improved thermoelectric figure of merit and module efficiency in Bi 0.5 Sb 1.5 Te 3 -based composites

Qiaoyan Pan,Kaikai Pang,Qiang Zhang,Yan Liu,Huilie Shi,Jingsong Li,Wenjie Zhou,Qianqian Sun,Yuyou Zhang,Xiaojian Tan,Peng Sun,Jiehua Wu,Guo-Qiang Liu,Jun Jiang

DOI: https://doi.org/10.1039/d4ta00552j

IF: 11.9

2024-01-01

Journal of Materials Chemistry A

Abstract:The highly active additive Cu 2 SnTe 3 generates multi-scale defects, effectively reducing lattice thermal conductivity. Along with optimized weighted mobility, the higher quality factor yields a competitive ZT value in the (Bi,Sb) 2 Te 3 -based composite.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Integrating band engineering with point defect scattering for high thermoelectric performance in Bi2Si2Te6

Chen Chen,Dongyi Shen,Chengliang Xia,Zongwei Zhang,Wenxuan Wang,Qian Zhang,Yue Chen

DOI: https://doi.org/10.1016/j.cej.2022.135968

IF: 15.1

2022-08-01

Chemical Engineering Journal

Abstract:A layer-structure compound Bi2Si2Te6 is introduced as a promising thermoelectric material. The intrinsic low lattice thermal conductivity of Bi2Si2Te6 is because of the low phonon group velocities near the Γ point and the overlap of optical and acoustic phonon branches. A further decreased thermal conductivity is obtained by alloying Sb at the Bi site for the additional point-defect scattering of phonons. This Sb alloying also enhances the density-of-states near the valence band maximum for a larger carrier effective mass, and suppresses the bipolar effect by increasing the carrier concentration and widening the band gap. Benefitting from both the enhancement of power factor and the decrease of lattice thermal conductivity, the peak zT value is improved from ∼ 0.45 at 573 K for Bi2Si2Te6 to ∼ 1.2 at 773 K for BiSbSi2Te6.

engineering, chemical, environmental
Refined band structure plus enhanced phonon scattering realizes thermoelectric performance optimization in CuI–Mn codoped SnTe

Gang Wu,Zhe Guo,Qiang Zhang,Xuemei Wang,Lidong Chen,Xiaojian Tan,Peng Sun,Guo-Qiang Liu,Bo Yu,Jun Jiang

DOI: https://doi.org/10.1039/d1ta03360c

IF: 11.9

2021-01-01

Journal of Materials Chemistry A

Abstract:CuI–Mn codoping promotes valence band convergence and enhances multiple defect-phonon scattering in SnTe, giving rise to significantly improved thermoelectric performance.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Na/Bi-co-doping and Heterogeneous Interfaces Leading to Enhanced Thermoelectric Performance of P-Type Mg3Sb2-based Zintls

Zhe Xu,Xiao-Lei Shi,Yibo Zhang,Jisheng Liang,Meng Li,Chengyan Liu,Lei Miao,Siqi Liu,Shihao Wang,Qi Zhou,Jie Gao,Zhongwei Zhang,Wei-Di Liu,Ying Peng,Jun-Liang Chen,Zhi-Gang Chen

DOI: https://doi.org/10.1016/j.cej.2024.155147

IF: 15.1

2024-01-01

Chemical Engineering Journal

Abstract:Owing to the non-toxicity and low cost, Mg3Sb2-based Zintls are promising candidates for mid-temperature thermoelectric applications. However, the thermoelectric performance of p-type Mg3Sb2 is significantly lower than that of n-type ones. Here, we achieve simultaneous optimization of the band structure and enhanced phonon scattering through the combined doping of Na at the cation site and Bi at the anion site, leading to a competitive figure of merit, ZT of 0.73 at 773 K and a maximum theoretical energy conversion efficiency of 6.5 % at a temperature difference of 450 K. First-principles calculations indicate that Na and Bi co-doping effectively narrows the band gap and shifts the Fermi level into the valence band, thereby increasing the hole carrier concentration. This ensures a relatively high Seebeck coefficient and improved electrical conductivity, resulting in an excellent power factor of 7.5 mu W cm(-1) K-2. Additionally, by adjusting the amount of Bi nanoprecipitates in the matrix, the heterogeneous interfaces significantly enhance phonon scattering and markedly reduce the lattice thermal conductivity (0.52 W m(-1) K-1), collectively leading to the high thermoelectric performance. Furthermore, by pairing n-type Mg3.18Y0.02Sb1.5Bi0.49Se0.01, a double-leg thermoelectric device achieves an energy conversion efficiency of 4.1 % with a temperature difference of 390 K.

Band Engineering Via Biaxial Strain for Enhanced Thermoelectric Performance in Stannite-Type Cu2ZnSnSe4

Strain-induced Ferroelectricity and Lattice Coupling in BaSnO3 and SrSnO3.

Remarkable Enhancement in Thermoelectric Performance of BiCuSeO Through Biaxial Strain Modulation

Biaxial Strain Improving the Thermoelectric Performance of a Two-Dimensional MoS 2 /WS 2 Heterostructure

Biaxial Tensile Strain-Induced Enhancement of Thermoelectric Efficiency of α-Phase Se2Te and SeTe2 Monolayers

Thermoelectric Properties of Strained -Cu<sub>2</sub>Se

Enhanced Out-of-plane Thermoelectric Performance of Cmcm SnSe Phase by Uniaxial Strain

Strain Engineering for 2D Ferroelectricity in Lead Chalcogenides

Band Structure Engineering of Bi<sub>4</sub>O<sub>4</sub>SeCl<sub>2</sub> for Thermoelectric Applications

Biaxial strain tuned thermoelectric properties in monolayer $\mathrm{PtSe_2}$

Band and microstructure engineering toward high thermoelectric performance in SnTe

Improving Thermoelectric Performance of Asymmetrical Janus 1T-Snsse Monolayer by the Synergistic Effect of Band Convergence and Crystal Lattice Softening under Strain Engineering

Effect of biaxial tensile strain on the thermoelectric properties of monolayer ZrTiCO 2

The Strain-Induced Excellent Thermoelectric Performance of PbTe

Lattice Strain and Band Overlap of the Thermoelectric Composite Mg2Si1−xSnx

Enhanced Thermoelectric Performance of Stibium and Bismuth Co-Doped SnTe Via Melt Spinning

Manipulating Band Convergence and Resonant State in Thermoelectric Material SnTe by Mn–In Codoping

Leveraging the Cu 2 SnTe 3 additive for an improved thermoelectric figure of merit and module efficiency in Bi 0.5 Sb 1.5 Te 3 -based composites

Integrating band engineering with point defect scattering for high thermoelectric performance in Bi2Si2Te6

Refined band structure plus enhanced phonon scattering realizes thermoelectric performance optimization in CuI–Mn codoped SnTe

Na/Bi-co-doping and Heterogeneous Interfaces Leading to Enhanced Thermoelectric Performance of P-Type Mg3Sb2-based Zintls