Abstract:Electronic and photonic technologies have transformed our lives—from computing and mobile devices, to information technology and the internet. Our future demands in these fields require innovation in each technology separately, but also depend on our ability to harness their complementary physics through integrated solutions1,2. This goal is hindered by the fact that most silicon nanotechnologies—which enable our processors, computer memory, communications chips and image sensors—rely on bulk silicon substrates, a cost-effective solution with an abundant supply chain, but with substantial limitations for the integration of photonic functions. Here we introduce photonics into bulk silicon complementary metal–oxide–semiconductor (CMOS) chips using a layer of polycrystalline silicon deposited on silicon oxide (glass) islands fabricated alongside transistors. We use this single deposited layer to realize optical waveguides and resonators, high-speed optical modulators and sensitive avalanche photodetectors. We integrated this photonic platform with a 65-nanometre-transistor bulk CMOS process technology inside a 300-millimetre-diameter-wafer microelectronics foundry. We then implemented integrated high-speed optical transceivers in this platform that operate at ten gigabits per second, composed of millions of transistors, and arrayed on a single optical bus for wavelength division multiplexing, to address the demand for high-bandwidth optical interconnects in data centres and high-performance computing3,4. By decoupling the formation of photonic devices from that of transistors, this integration approach can achieve many of the goals of multi-chip solutions5, but with the performance, complexity and scalability of ‘systems on a chip’1,6–8. As transistors smaller than ten nanometres across become commercially available9, and as new nanotechnologies emerge10,11, this approach could provide a way to integrate photonics with state-of-the-art nanoelectronics.

Nanoparticles: A Route to Post-Shrink Information Systems

Recent Advances in Monolithic Integration of Diverse Technologies with Si CMOS

Silicon Photonic Devices for Scalable Quantum Information Applications

Silicon-based Heterostructures for Optoelectronic Synaptic Devices

Silicon Photonic Network-on-chip and Enabling Components

Advances In Si-Based Nanotechnology And Quantum Devices

Synaptic Devices Based on Semiconductor Nanocrystals

InP nanocrystals on silicon for optoelectronic applications

Nanotechnology-inspired Information Processing Systems of the Future

Nanopatterning Technologies of Two‐Dimensional Materials for Integrated Electronic and Optoelectronic Devices

Nanomedicine Crystals-Inspired Optoelectronic Device Materials and Processing

Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip

Nano Electrical Devices and Integration

Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors

Research directions and challenges in nanoelectronics

On-chip nanophotonics and future challenges

Carbon Based Nanoelectronics: Materials and Devices

Integrated Nanophotonics For Information Technologies And Sensors: Ways To Solve The Present Gridlock In Performance

Nanoelectronics, Circuits and Nanoprocessors

Recent Advances in 1D Nanostructure Assembly and Direct Integration Methods for Device Applications

Cooperative Bilayer of Lattice-Disordered Nanoparticles As Room-Temperature Sinterable Nanoarchitecture for Device Integrations.