Abstract:Metal–semiconductor–metal (MSM) ultraviolet (UV) photodetectors have been widely studied owing to their advantages such as ease of preparation, high responsivity, and low costs; however, due to the high overlap between the light absorption layer and electron channel, the sensitivity of UV photodetectors needs to be improved. In this study, the direct generation of zinc oxide nanowires (ZnO NWs) with short lengths by focused ion beam (FIB) exposure of spin-coated zinc acetate films was observed for the first time. The bottoms of the short ZnO NWs were in contact with each other while the tops were independent of each other, which separated the light absorption layer of the UV photodetector from the electron channel, thereby effectively reducing the dark current of the UV photodetector and improving its sensitivity. A high ON/OFF ratio of 13 447 was achieved for the UV photodetector based on the as-prepared short ZnO NWs, and a high responsivity and specific detectivity were obtained, with a value of 25.33 A/W and Jones, respectively. To optimize the response characteristics of the UV photodetector, the as-prepared short ZnO NWs were annealed at 350 °C and used as the seed layer to hydrothermally grow ZnO NWs with the bottoms not in contact with each other. This UV photodetector achieved an ON/OFF ratio of 28 378, a responsivity of 209.27 A/W, and a specific detectivity of Jones. We directly prepared short ZnO NWs using FIB to achieve highly sensitive UV detection for the first time, offering new ideas and approaches for the design and preparation of high-performance UV photodetectors.

Tunable channel width of a UV-gate field effect transistor based on ZnO micro-nano wire

Enhancing Sensitivity of A Single Zno Micro-/Nanowire Photodetector by Piezo-Phototronic Effect

Ultraviolet Photoresponse of Zno Thin-Film Transistor Fabricated at Room Temperature

Ultraviolet photodetective properties of single ZnO nanowire field effect transistor

Ferroelectric Tuning of ZnO Ultraviolet Photodetectors

ZnO UV photodetector with controllable quality factor and photosensitivity

Photogating-controlled ZnO Photodetector Response for Visible to Near-Infrared Light.

Characterization of ZnO Nanowire Field-Effect Transistors Exposed to Ultraviolet Radiation

Visible Light Response of Unintentionally Doped ZnO Nanowire Field Effect Transistors

Synthesis of ZnO Nanowires for Thin Film Network Transistors

High Performance of Enhanced Mode Field Effect Transistor and Ultraviolet Sensor Based on ZnO Nanosheet

Photoelectric Characteristics of Single ZnO Nanowire Field Effect Transistor

Gate Voltage Dependence Ultrahigh Sensitivity WS₂ Avalanche Field-Effect Transistor

Ferroelectric Localized Field-Enhanced ZnO Nanosheet Ultraviolet Photodetector with High Sensitivity and Low Dark Current

Flexible ultraviolet photodetector based on single ZnO microwire/polyaniline heterojunctions

Heterogeneous Metal Oxide Channel Structure for Ultra-High Sensitivity Phototransistor with Modulated Operating Conditions

Focused Ion Beam Exposed Zinc Acetate Films for Preparation of Highly Sensitive Ultraviolet Photodetectors

Self-Powered Narrowband P-Nio/N-Zno Nanowire Ultraviolet Photodetector With Interface Modification Of Al2o3

Surface Acoustic Wave Ultraviolet Detector Based on Zinc Oxide Nanowire Sensing Layer

Dual Role of Ag Nanowires in ZnO Quantum Dot/ag Nanowire Hybrid Channel Photo Thin Film Transistors

Boosting performances of ZnO microwire homojunction ultraviolet self-powered photodetector by coupled interfacial engineering and plasmonic effects