Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

Passively Mode-Locked Iii-V/Silicon Lasers With Low Time Jitter Using Cw Optical Injection

Mode Selection in InGaAs/InGaAsP Quantum Well Photonic Crystal Lasers Based on Coupled Double-Heterostructure Cavities.

High-channel-count 20 GHz passively mode locked quantum dot laser directly grown on Si with 4.1 Tbit/s transmission capacity

Sub-kHz Linewidth, Hybrid III-V/silicon Wavelength-Tunable Laser Diode Operating at the Application-Rich 1647-1690 Nm

Turnkey locking of quantum-dot lasers directly grown on Si

Phase Noise Reduction of a 2 Μm Passively Mode-Locked Laser Through Hybrid III-V/silicon Integration

Tunable Quantum Dot Lasers Grown Directly on Silicon

Quasi-Continuous Wavelength Tuning of Single-mode Interband Cascade Lasers Based on V-coupled Cavity

A 1-μm-Band Injection-Locked Semiconductor Laser with a High Side-Mode Suppression Ratio and Narrow Linewidth

Narrow Linewidth Tunable V-cavity Laser Using Self-Injection Method

100 GHz Passive Mode-Locked Laser Based on Nonlinear Silicon Microring Resonator

Compact Passively Mode-Locked Fiber Laser at 1.55 Μm with Low Timing Jitter of 8 Fs

Low-noise 13 Μm InAs/GaAs Quantum Dot Laser Monolithically Grown on Silicon

Silicon-based III-V Quantum Dot Devices for Silicon Photonics

Monolithic Quantum Dot Discrete Mode Laser on SOI

Self-Mode-Locking of Quantum Cascade Lasers with Giant Ultrafast Optical Nonlinearities

Self‐Injection Locked Frequency Conversion Laser

High-pulse-energy III-V-on-silicon-nitride mode-locked laser

Integrated Mode-Hop-Free Tunable Lasers at 780 nm for Chip-Scale Classical and Quantum Photonic Applications

Low Noise, Tunable Silicon Photonic Lasers