High power passive mode-locking and self-started self-mode-locking in diode pumped Nd:GdVO4 lasers

S. Zhang,E Wu,H. Pan,H. Zeng

2004-01-01

Abstract:Passively Q-switched and cw mode-locking was obtained in a Nd:GdVO4 laser with a semiconductor saturable absorber mirror. And self-started self-mode-locking was also achieved in Nd:GdVO4 laser.

What problem does this paper attempt to address?

LED-side-pumped Passively Q-switched Nd:GdVO4 Laser Without Active Temperature Control

Hong Xiao,Tianzhuo Zhao,Wenqi Ge,Mingshan Li,Shuzhen Nie,Fanghui Zhong,Fei Li,Ke Huang,Cuifang Kuang

DOI: https://doi.org/10.1007/s00340-023-08068-x

2023-01-01

Applied Physics B

Abstract:Nd:GdVO4 has the advantages of a small thermal expansion coefficient, a large absorption bandwidth, and a large absorption and emission cross section, making it a good gain material for LED-pumping without active temperature control. In this paper, the LED-pumped Nd:GdVO4 laser was first generated in the quasi-continuous-wave and the passively Q-switched regime. With the incident pump energy of 8.0 mJ, the Nd:GdVO4 laser demonstrated energy of 195 μJ at 1063 nm in the quasi-continuous-wave regime, the slope efficiency was 4.7
High Efficiency Passively Q-switched Mode-Locking Nd:GdVO4 Laser with LT-In0.25Ga0.75As Saturable Absorber

S. D. Pan,L. N. Zhao,Y. Yuan,S. N. Zhu,J. L. He,Y. G. Wang

DOI: https://doi.org/10.1016/j.optmat.2009.01.004

IF: 3.754

2009-01-01

Optical Materials

Abstract:The generation of passively Q-switched mode-locking operation with 100% modulation depth has been observed from a diode-pumped Nd:GdVO4 laser with a low temperature In0.25Ga0.75As saturable absorber, which was grown by the metal–organic chemical–vapor deposition technique and acted as saturable absorber as well as output coupler. The repetition rate and pulse duration of the mode-locked pulses concentrated in the Q-switch envelop were 455MHz and 12ps, respectively. The average output power was 1.8W and the slope efficiency was 36%.
Passive Mode Locking in a Diode-Pumped Nd:GdVO/sub 4/ Laser with a Semiconductor Saturable Absorber Mirror

S Zhang,E Wu,HF Pan,HP Zeng

DOI: https://doi.org/10.1109/jqe.2004.826418

IF: 2.5

2004-01-01

IEEE Journal of Quantum Electronics

Abstract:We demonstrate Q-switched and CW passive mode locking in a laser-diode-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror. The repetition rate of the Q-switched envelope increased from 23.1 to 260 kHz as the pump power increased from 1.75 to 13.0 W. At a pump power of 13.7 W, the Q-switched mode locking changed to CW mode locking. The maximum average output power of 4.9 W with a 140-MHz repetition rate was obtained at a pump power of 17.9 W and the single mode-locked pulse energy was 0.035 muJ. The CW mode-locked pulse duration was measured to be similar to11.5 ps.
4-ps passively mode-locked Nd:Gd_0.5Y_0.5VO4 laser with a semiconductor saturable-absorber mirror

Jing-Liang He,Ya-Xian Fan,Juan Du,Yong-Gang Wang,Sheng Liu,Hui-Tian Wang,Lian-Han Zhang,Yin Hang

DOI: https://doi.org/10.1364/OL.29.002803

IF: 3.6

2004-01-01

Optics Letters

Abstract:We have demonstrated a passively mode-locked diode end-pumped all-solid-state laser, which is composed of a Nd:Gd0.5Y0.5VO4 crystal and a folded cavity with a semiconductor saturable-absorber mirror grown by metal-organic chemical-vapor deposition. Stable cw mode locking with a 3.8-ps pulse duration at a repetition rate of 112 MHz was obtained. At 13.6 W of the incident pump power, a clean mode-locked fundamental-mode average output power of 3.9 W was achieved with an overall optical-to-optical efficiency of 29.0%, and the slope efficiency was 38.1%. (C) 2004 Optical Society of America.
4-ps passively mode-locked Nd:Gd0.5Y0.5VO4 laser with a semiconductor saturable-absorber mirror.

Jing-Liang He,Ya-Xian Fan,Juan Du,Yong-Gang Wang,Sheng Liu,Hui-Tian Wang,Lian-Han Zhang,Yin Hang

DOI: https://doi.org/10.1364/OL.29.002803

IF: 3.6

2004-01-01

Optics Letters

Abstract:We have demonstrated a passively mode-locked diode end-pumped all-solid-state laser, which is composed of a Nd:Gd0.5Y0.5VO4 crystal and a folded cavity with a semiconductor saturable-absorber mirror grown by metal-organic chemical-vapor deposition. Stable cw mode locking with a 3.8-ps pulse duration at a repetition rate of 112 MHz was obtained. At 13.6 W of the incident pump power, a clean mode-locked fundamental-mode average output power of 3.9 W was achieved with an overall optical-to-optical efficiency of 29.0%, and the slope efficiency was 38.1%.
Diode-End-Pumped Passively Mode-Locked Nd : Ggg Laser with A Semiconductor Saturable Mirror

L. J. Qin,D. Y. Tang,G. Q. Xie,H. Luo,C. M. Dong,Z. T. Jia,H. H. Yu,X. T. Tao

DOI: https://doi.org/10.1016/j.optcom.2008.06.011

IF: 2.4

2008-01-01

Optics Communications

Abstract:We report on the passive mode-locking of a diode-end-pumped neodymium-doped gadolinium gallium garnet (Nd:GGG) crystal with a semiconductor saturable absorber mirror (SESAM). Continuous wave (CW) mode-locking was obtained. The mode-locked pulse duration was estimated to be ∼17.5ps with a maximum average output power of 0.4W. The mode-locked pulses have a repetition rate of 121.5MHz. To our knowledge, this is the first demonstration of passive mode-locking of the diode pumped Nd:GGG lasers.
High-power Passive Mode-Locking of a Diode Pumped Yb:GdVO4 Laser

H. Luo,D. Y. Tang,G. Q. Xie,H. J. Zhang,L. J. Qin,H. H. Yu,L. Y. Ng,L. J. Qian

DOI: https://doi.org/10.1016/j.optcom.2008.07.039

IF: 2.4

2008-01-01

Optics Communications

Abstract:Passive mode-locking of a diode pumped Yb-doped GdVO4 crystal laser was demonstrated for the first time to our knowledge. The laser was mode-locked at the wavelength of 1019.1nm and had an average output power of 1.01W. The mode-locked pulse duration was 3.1ps. The laser was end-pumped by a high-power fiber pigtailed laser diode bar and the mode-locking was enabled by a semiconductor saturable absorber mirror (SESAM).
Passive Stabilization of a Passively Mode-Locked Nd:GdVO4 Laser by Inverse Saturable Absorption

Jiying Peng,Jieguang Miao,Yonggang Wang,Baoshan Wang,Huiming Tan,Longsheng Qian,Xiaoyu Ma

DOI: https://doi.org/10.1016/j.optcom.2007.09.001

IF: 2.4

2008-01-01

Optics Communications

Abstract:A diode-pumped Nd:GdVO4 laser mode-locked by a semiconductor saturable absorber and output coupler (SESAOC) is passively stabilized to suppress Q-switched mode-locking. A phase mismatched BIBO second-harmonic generation (SHG) crystal is used for passive stabilization. The continuous wave mode-locking (CWML) threshold is reduced and the pulse width is compressed. The pulse width is 6.5ps as measured at the repetition rate of 128MHz.
Passively Q-switched mode-locking Nd:GdVO4 laser with a chemically reduced graphene oxide saturable absorber

Shu-Di Pan,Liang Cui,Jing-Quan Liu,Bing Teng,Jian-Hua Liu,Xiao-Hui Ge

DOI: https://doi.org/10.1016/j.optmat.2014.09.028

IF: 3.754

2014-01-01

Optical Materials

Abstract:A diode-pumped passively Q-switched mode-locking Nd:GdVO4 laser using a chemically reduced graphene oxide saturable absorber was demonstrated. The repetition rate and pulse width of the Q-switching envelopes were 5.7 MHz and 100 ns, respectively, while those of the mode-locking pulses that were modulated in the Q-switching envelopes were 139 MHz and 10 ps. At the maximum pump power of 7W, the average output power was 1.38W, corresponding to a slope efficiency of 25%. (C) 2014 Elsevier B.V. All rights reserved.
Passively mode-locked Nd:Gd0.1Y0.9VO4 laser with a semiconductor saturable absorber mirror

Shiying Cao,Yue Zhu,Lu Chai,Qingyue Wang,Zhi Gang Zhang

DOI: https://doi.org/10.7498/aps.58.6269

IF: 0.906

2009-01-01

Acta Physica Sinica

Abstract:A home-made semiconductor saturable absorber mirror (SESAM) with or without high reflectivity coating is incorporated in the cavity of a laser with an Nd:Gd0.1Y0.9VO4 crystal as the laser material and a Z-type cavity. In this paper, we explore the effect of the SESAM on the mode-locking property of the laser. The threshold value of the mode locking was found to decreased from 1.69 W to 1.45 W and the mode locking was more stable with the high reflectivity coating SESAM. At a pump power of 2 W, stable continuous-wave mode locking was obtained with an average output power of 250 mW at an optical conversion efficiency of 12.5% at the central wavelength of 1064 nm and a repetition rate of 142.25 MHz. ©2009 Chin. Phys. Soc.
Diode-pumped passively mode-locked Nd:GdVO4 laser at 912nm

changwen xu,zhiyi wei,yongdong zhang,dehua li,zhiguo zhang,xiaoping wang,frank kallmeyer,shan wang,aijun ding,H. J. Eichler,chunyu zhang,chunqing gao

DOI: https://doi.org/10.1016/j.optcom.2008.04.048

IF: 2.4

2009-01-01

Optics Communications

Abstract:We have demonstrated the stable mode-locked Nd:GdVO4 laser operating on the 4F3/2–4I9/2 transition at 912nm. With a four-mirror-folded cavity and a semiconductor saturable absorber mirror for passive mode-locking, we have gained 6.5ps laser pulses at a repetition rate of 178MHz. The laser is diode-end-pumped, and the total output power from the out coupler is 128mw at an incident pump power of 19.7W.
Diode-Pumped Self-Starting Mode-Locked Nd:YVO 4 Laser with Semiconductor Saturable Absorber Output Coupler

YL Jia,ZY Wei,JA Zheng,WJ Ling,YG Wang,XY Ma,ZG Zhang

DOI: https://doi.org/10.1088/0256-307x/21/11/037

2004-01-01

Abstract:By using a semiconductor saturable-absorber output coupler as a mode-locking device, we experimentally realized the operation of a diode-pumped passively mode-locked Nd:YVO4 laser. Stable laser pulses with duration of 2.3 ps were generated at the output power of about 1 W. With increasing the pump power to 9 W, the maximum mode-locked power of 1.7 W was obtained, which corresponds to a slope conversion efficiency of 44% and optical-to-optical conversion efficiency of 19%.
Diode-pumped Passively Mode-Locked Nd:YVO4 Laser at 1342 Nm with Periodically Poled LiNbO3.

Y. H. Liu,Z. D. Xie,S. D. Pan,X. J. Lv,Y. Yuan,X. P. Hu,J. Lu,L. N. Zhao,C. D. Chen,G. Zhao,S. N. Zhu

DOI: https://doi.org/10.1364/ol.36.000698

2011-01-01

Abstract:In this Letter, we demonstrate a nonlinear-mirror (NLM) mode-locked diode-pumped solid-state Nd.YVO4 laser operating at 1342nm, in which the NLM comprises a periodically poled LiNbO3 crystal and a dichroic mirror. The self-starting threshold for cw mode locking is 1.5W, which is significantly lower than that of saturable absorber mode locking. An average power of 1.52W at 1342nm is obtained under diode pump power of 10W at 808nm, with the slope efficiency being up to 16.8%. The pulse width and the repetition rate of the mode-locked laser output are about 9.5 ps and 101 MHz, respectively. (C) 2011 Optical Society of America
Passively mode-locked Nd:GGG laser with a semiconductor saturable absorber mirror

B. Y. Zhang,J. L. Xu,G. J. Wang,J. L. He,W. J. Wang,Q. L. Zhang,D. L. Sun,J. Q. Luo,S. T. Yin

DOI: https://doi.org/10.1134/S1054660X12040317

IF: 1.2

2012-01-01

Laser Physics

Abstract:The mode-locking operation of the Nd:GGG crystal with a semiconductor saturable absorber mirror (SESAM) was demonstrated. Continuous wave (CW) mode-locking was obtained with the pulse duration of 11 ps and the pulse repetition rate of 40.38 MHz. At 7 W of pump power, the maximum average output power of 1.1 W was obtained with the slope efficiency of 18.1%.
Q-Switched Mode-Locking by Cr4+ : Yag in A Laser-Diode-Pumped C-Cut Nd : Gdvo4 Laser

S. Zhang,E. Wu,H. Pan,H. Zeng

DOI: https://doi.org/10.1016/j.optcom.2003.12.013

2004-01-01

Applied Physics B

Abstract:We have demonstrated passively Q-switched mode-locking in a laser-diode-pumped Nd : GdVO 4 laser with an intracavity Cr 4+ : YAG saturable absorber. At a pump power of 19.4 W, the Q-switched mode-locked laser produced an average output power of 3.22 W, and the repetition rates of the Q-switched envelope and the mode-locked laser pulse were 227 kHz and 144 MHz, respectively. The duration of the mode-locked pulse was within the sub-nanosecond range.
Passively Mode-Locked Nd:Gd 0.1 Y 0.9 VO 4 Laser with a Semiconductor Saturable Absorber Mirror

Cao Shi-Ying,Yue Zhu,Lu Chai,Qingyue Wang,Zhigang Zhang

2009-01-01

Abstract:A home-made semiconductor saturable absorber mirror （SESAM） with or without high reflectivity coating is incorporated in the cavity of a laser with an Nd∶Gd 0.1 Y 0.9 VO 4 crystal as the laser material and a Z-type cavity. In this paper, we explore the effect of the SESAM on the mode-locking property of the laser. The threshold value of the mode locking was found to decreased from 1.69W to 1.45W and the mode locking was more stable with the high reflectivity coating SESAM. At a pump power of 2 W, stable continuous-wave mode locking was obtained with an average output power of 250mW at an optical conversion efficiency of 12.5% at the central wavelength of 1064nm and a repetition rate of 142.25MHz.
High-power Passive Mode Locking of a Compact Diode-Pumped Nd:LuVO4laser

G.Q. Xie,D.Y. Tang,H. Luo,H.H. Yu,H.J. Zhang,L.J. Qian

DOI: https://doi.org/10.1002/lapl.200810045

IF: 1.704

2008-01-01

Laser Physics Letters

Abstract:We report on a compact high-power passively mode-locked Nd:LuVO4 laser by use of semiconductor saturable absorber mirror (SESAM). The laser generated clean CW mode-locked pulses with an average output power of 8.6 W, a repetition rate of 144 MHz, and a pulse duration of 13.2 ps. By employing a three-mirror cavity scheme, the laser setup has only a footprint size of 70×30 cm2, which can be packaged to a portable laser system for convenient applications.
High-Power Passive Mode Locking Of A Compact Diode-Pumped Nd : Luvo4 Laser

G. Q. Xie,D. Y. Tang,H. Luo,H. H. Yu,H. J. Zhang,L. J. Qian

DOI: https://doi.org/10.1002/lapl.200810045

IF: 1.704

2008-01-01

Laser Physics Letters

Abstract:We report on a compact high-power passively mode-locked Nd:LuVO4 laser by use of semiconductor saturable absorber mirror (SESAM). The laser generated clean CW mode-locked pulses with an average output power of 8.6 W, a repetition rate of 144 MHz, and a pulse duration of 13.2 ps. By employing a three-mirror cavity scheme, the laser setup has only a footprint size of 70 x 30 cm(2), which can be packaged to a portable laser system for convenient applications.
High-power passive mode locking of a compact diode-pumped Nd:LuVO<sub>4</sub>laser

G. Q. Xie,D. Y. Tang,H. Luo,H. H. Yu,H. J. Zhang,L. J. Qian

DOI: https://doi.org/10.1002/lapl.200810045

IF: 1.704

2008-01-01

Laser Physics Letters

Abstract:We report on a compact high-power passively mode-locked Nd:LuVO4 laser by use of semiconductor saturable absorber mirror (SESAM). The laser generated clean CW mode-locked pulses with an average output power of 8.6 W, a repetition rate of 144 MHz, and a pulse duration of 13.2 ps. By employing a three-mirror cavity scheme, the laser setup has only a footprint size of 70 x 30 cm(2), which can be packaged to a portable laser system for convenient applications.
Passive Mode-Locking Performance With A Mixed Nd:Lu0.5gd0.5vo4 Crystal

Haohai Yu,Huaijin Zhang,Zhengping Wang,Jiyang Wang,Yonggui Yu,Dingyuan Tang,Guoqiang Xie,Hang Luo,Minhua Jiang

DOI: https://doi.org/10.1364/OE.17.003264

IF: 3.8

2009-01-01

Optics Express

Abstract:Continuous-wave (cw) mode-locking of a diode-pumped Nd:Lu0.5Gd0.5VO4 mixed crystal laser is reported for the first time to our knowledge with a simply compact three-mirror cavity. Stable pulses as short as 5.5 ps were generated at a repetition rate of 147 MHz. At the absorbed pump power of 16 W, a mode-locked laser with average output power of 5.31 W was obtained, giving an optical conversion efficiency of 33.2%, and a slope efficiency of 46.7%. (C) 2008 Optical Society of America

High power passive mode-locking and self-started self-mode-locking in diode pumped Nd:GdVO4 lasers

LED-side-pumped Passively Q-switched Nd:GdVO4 Laser Without Active Temperature Control

High Efficiency Passively Q-switched Mode-Locking Nd:GdVO4 Laser with LT-In0.25Ga0.75As Saturable Absorber

Passive Mode Locking in a Diode-Pumped Nd:GdVO/sub 4/ Laser with a Semiconductor Saturable Absorber Mirror

4-ps passively mode-locked Nd:Gd_0.5Y_0.5VO4 laser with a semiconductor saturable-absorber mirror

4-ps passively mode-locked Nd:Gd0.5Y0.5VO4 laser with a semiconductor saturable-absorber mirror.

Diode-End-Pumped Passively Mode-Locked Nd : Ggg Laser with A Semiconductor Saturable Mirror

High-power Passive Mode-Locking of a Diode Pumped Yb:GdVO4 Laser

Passive Stabilization of a Passively Mode-Locked Nd:GdVO4 Laser by Inverse Saturable Absorption

Passively Q-switched mode-locking Nd:GdVO4 laser with a chemically reduced graphene oxide saturable absorber

Passively mode-locked Nd:Gd0.1Y0.9VO4 laser with a semiconductor saturable absorber mirror

Diode-pumped passively mode-locked Nd:GdVO4 laser at 912nm

Diode-Pumped Self-Starting Mode-Locked Nd:YVO 4 Laser with Semiconductor Saturable Absorber Output Coupler

Diode-pumped Passively Mode-Locked Nd:YVO4 Laser at 1342 Nm with Periodically Poled LiNbO3.

Passively mode-locked Nd:GGG laser with a semiconductor saturable absorber mirror

Q-Switched Mode-Locking by Cr4+ : Yag in A Laser-Diode-Pumped C-Cut Nd : Gdvo4 Laser

Passively Mode-Locked Nd:Gd 0.1 Y 0.9 VO 4 Laser with a Semiconductor Saturable Absorber Mirror

High-power Passive Mode Locking of a Compact Diode-Pumped Nd:LuVO4laser

High-Power Passive Mode Locking Of A Compact Diode-Pumped Nd : Luvo4 Laser

High-power passive mode locking of a compact diode-pumped Nd:LuVO<sub>4</sub>laser

Passive Mode-Locking Performance With A Mixed Nd:Lu0.5gd0.5vo4 Crystal