Possibility Of Combined Use Of Neuron-Mos And Rtd In Multi-Valued Logic Circuits

Y Cheng,J Xu

DOI: https://doi.org/10.1109/ICASIC.2003.1277469

2003-01-01

Abstract:In this paper, the possibility of combined use of neuron-MOS and resonant tunneling diode is investigated. Two application examples in MVL circuits are described. Three basic forms of combined use are proposed. The advantages and disadvantages are analyzed.

What problem does this paper attempt to address?

Design of probabilistic-based Markov Random Field logic gates in 65nm CMOS technology

Zhenghao Lu,XiaoPeng Yu,Kiatseng Yeo

DOI: https://doi.org/10.1109/SOCDC.2010.5682910

2010-01-01

Abstract:As the VLSI technology node is getting into the sub-100 nm regime, the reliability issues caused by random interferences such as noise, process variations and manufacturing defects are changing the nature of digital computation from deterministic to probabilistic. This paper studies the principle of probabilistic-based Markov Random Field (MRF) design methodology for CMOS static logic gates. The MRF design technique is able to significantly improve the reliability and interference tolerance of the logic circuits. A Differential Cascode Voltage Switch (DCVS) based MRF logic design method is proposed, which presents substantial noise immunity improvement over the normal MRF logic circuits. The proposed method is validated by simulation in 65 nm CMOS technology.
Multi-valued Logic Design Methodology with Double Negative Differential Resistance Transistors

Yuchao Ji,Sheng Chang,Hao Wang,Qijun Huang,Jin He,Fan Yi

DOI: https://doi.org/10.1049/mnl.2017.0163

2017-01-01

Micro & Nano Letters

Abstract:Multi-valued logic (MVL) is one of the promising alternatives of binary logic since it has a high-logic density, which brings a vision of simpler circuit structure. Based on a novel concept as double negative differential resistance field effect transistor and its analytic description, a design methodology utilising the mechanism of monostable-to-multistable transition logic element (MMLE) for MVL is proposed in this study. The basic ternary logic gates are designed as a complete logic set, and a compact ternary four-input full adder is constructed as an example of function circuits. Comparing with binary circuit and ternary circuit based on conventional design, the circuit shows advantage in device cost and other properties. The results verify that this MMLE design methodology has a good information load ability, which will have a brilliant prospect in MVL circuits.
Design of Nano-Scale Noise Tolerant CMOS Logic Circuits Based on Probabilistic Markov Random Field Approach

Zheng Hao Lu,Xiao Peng Yu,Yang Liu,Jia Ning Su,Chang Hui Hu

DOI: https://doi.org/10.1166/nnl.2012.1402

2012-01-01

Nanoscience and Nanotechnology Letters

Abstract:Scaling down of the CMOS technology into the sub-50 nm regime has made the nature of digital computation from deterministic to probabilistic. Noise tolerance is becoming equally important to power, speed and area in nano-scale VLSI computational systems. In this letter, a probabilistic-based Markov Random Field (MRF) design methodology is combined with the Differential Cascode Voltage Switch (DCVS) circuit topology to design a novel nano-scale CMOS XOR-NXOR circuit. The proposed design is implemented in 40 nm CMOS technology and presents superior noise immunity over traditional designs with low power consumption.
Easily Cascaded Memristor-CMOS Hybrid Circuit for High-Efficiency Boolean Logic Implementation

Zhekang Dong,Donglian Qi,Yufei He,Zhao Xu,Xiaofang Hu,Shukai Duan

DOI: https://doi.org/10.1142/s0218127418501493

IF: 2.45

2018-01-01

International Journal of Bifurcation and Chaos

Abstract:Memristor is a novel passive electronic element with resistance-switching dynamics. Due to the threshold property and the variable conductivity of the memristive element, its composite circuits are promising for the implementation of logic operations. In this paper, a flexible logic circuit based on the threshold-type memristor and the mature complementary metal-oxide-semiconductor (CMOS) technology is designed for the realization of Boolean logic operations. Specifically, the proposed method is able to perform the NAND, AND, OR, and NOR gate operations through two phases, i.e. the writing operation and the reading operation. In such implementation, the total delay is very small especially for time-sequence inputs. Furthermore, for existing memristor-based logic implementation, a contrastive analysis with relevant computer simulations is carried out. The experimental results indicate that the proposed method is capable of realizing all basic Boolean logic operations, and some more complicated cascaded logic operations with more compact circuit structures, higher efficiency, and lower operating cost.
Flexible Memristor-Based LUC and Its Network Integration for Boolean Logic Implementation

Zhekang Dong,Yufei He,Xiaofang Hu,Donglian Qi,Shukai Duan

DOI: https://doi.org/10.1049/iet-nde.2018.0027

2019-01-01

IET Nanodielectrics

Abstract:Memristor is a nanoscale electronic element with variable resistance that depends on the amount and direction of the charge passing through it. As a promising candidate, this memristive element opens up a new approach for the implementation of Boolean logic operations. In this study, a flexible logic unit circuit (LUC) based on a practical memristor model is proposed, which is able to perform the AND, OR, NOT, NOR, and NAND gate operations by different switch settings. Unlike existing memristor-based logic implementation, the initialisation is not necessary for the proposed method, and the total delay can be effectively reduced, especially for time-sequence inputs. Furthermore, the concept of the memristor-based logic network is developed by multiple memristor-based LUCs connected in series and parallel. The circuit simulation demonstrates that the presented logic network is capable of realising multi-input–multi-output logic operations with compact structure, high efficiency, and sufficient accuracy.
Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM) Based Ternary Combinational Logic Circuits

Furqan Zahoor,Fawnizu Azmadi Hussin,Farooq Ahmad Khanday,Mohamad Radzi Ahmad,Illani Mohd Nawi,Chia Yee Ooi,Fakhrul Zaman Rokhani

DOI: https://doi.org/10.3390/electronics10010079

IF: 2.9

2021-01-04

Electronics

Abstract:The capability of multiple valued logic (MVL) circuits to achieve higher storage density when compared to that of existing binary circuits is highly impressive. Recently, MVL circuits have attracted significant attention for the design of digital systems. Carbon nanotube field effect transistors (CNTFETs) have shown great promise for design of MVL based circuits, due to the fact that the scalable threshold voltage of CNTFETs can be utilized easily for the multiple voltage designs. In addition, resistive random access memory (RRAM) is also a feasible option for the design of MVL circuits, owing to its multilevel cell capability that enables the storage of multiple resistance states within a single cell. In this manuscript, a design approach for ternary combinational logic circuits while using CNTFETs and RRAM is presented. The designs of ternary half adder, ternary half subtractor, ternary full adder, and ternary full subtractor are evaluated while using Synopsis HSPICE simulation software with standard 32 nm CNTFET technology under different operating conditions, including different supply voltages, output load variation, and different operating temperatures. Finally, the proposed designs are compared with the state-of-the-art ternary designs. Based on the obtained simulation results, the proposed designs show a significant reduction in the transistor count, decreased cell area, and lower power consumption. In addition, due to the participation of RRAM, the proposed designs have advantages in terms of non-volatility.

engineering, electrical & electronic,computer science, information systems,physics, applied
A Novel Nanosheet Reconfigurable Field Effect Transistor with Dual-Doped Source/drain

Bin Lu,Xiaotao Liu,Zhu Li,Jiayu Di,Dawei Wang,Yulei Chen,Linpeng Dong,Yuanhao Miao

DOI: https://doi.org/10.1016/j.mejo.2024.106178

IF: 1.992

2024-01-01

Microelectronics Journal

Abstract:—In this paper, a reconfigurable field-effect transistor (RFET) with dual-doped nanosheet architecture and triple independent gates is proposed and studied with the numerical simulations. The proposed RFET can behave as either an n/p-type MOSFET or an n/p-type tunneling-FET (TFET) according to different program biases. A comprehensive study is carried out on the device mechanism and the influence of key device parameters. Various metrics, such as the on-state current (ION), off-state current (IOFF), ION/IOFF, threshold voltage (VT) and sub-threshold swing (SS), are used to evaluate the proposed RFET. This RFET combining the advantages of the conventional MOSFETs (High ION and operation speed) and the new emerging TFETs (Low IOFF, sub-threshold swing and power dissipation) could make the circuit design more flexible and high efficiency, and improve the circuit performance.
A Novel TMOSFET Ternary Inverter Based on Hybrid Conduction Mechanism

Xin Ma,Bin Lu,Lin-Peng Dong,Yuan-Hao Miao

DOI: https://doi.org/10.7498/aps.72.20230819

2023-01-01

Abstract:With the development of complementary metal-oxide semiconductor (CMOS) technology, the feature size of mental-oxide-semiconductor field-effect-transistor (MOSFET) is continuously shrunk, the short channel effect becomes more and more serious, which makes the static power consumption increase, and now the static power consumption becomes a main source of the power consumption of the integrated circuits. Currently, the performance of CMOS binary logic processor is approaching a bottleneck; therefore the ternary logic becomes a research hotspot to promote the development of high-performance low-power integrated circuits. Compared with binary logic, ternary logic possesses a strong data expression capability, which can not only improve the data density, but also reduce the circuit power consumption and the system complexity. However, using binary devices to build ternary logic circuits requires a large number of components, and even the passive components, which makes it impossible to leverage the advantages of ternary logic. The other method of implementing ternary logic is to utilize innovative two-dimensional materials. This method requires a small number of components and obviates the need for passive components, but it faces the problem that the fabrication process is not mature and cannot be mass-produced. To solve these problems, in this paper by combining the tunneling and the drift diffusion mechanism, we propose a tunneling metal-oxide-semiconductor field-effect transistor (TMOSFET) with three-state characteristics that make it highly suitable for ternary logic design. Compared with other ternary logic schemes, the ternary inverter based on TMOSFET has the same circuit structure as binary inverter, which can simplify the circuit design. In this paper, the operational mechanism of this ternary inverter is studied, and the condition of three-state output of inverter is analyzed. It is found that when the operating voltage VDD and the device turning voltage Vturn satisfy VDD/Vturn approximate to 1.4, the input voltage ranges of the three output states are equivalent. In addition, the influence of TMOSFET transfer characteristic on this ternary inverter is also analyzed. This has certain reference significance for designing and studying ternary logic circuits in future.
Design methodology of ternary logic circuit on resonant tunneling diode

WEI Yi,SHEN Ji-zhong

DOI: https://doi.org/10.6040/j.issn.1672-3961.3.2012.039

2013-01-01

Abstract:A new operator was introduced based on the switch-signal theory to describe the operating principle of ternary monostable-to-multistable transition logic element.A novel ternary RTD circuit topology and corresponding method were also proposed,which could make the design process straightforward to simplify the switch functions and implement the circuit with transistor networks.Furthermore,it could also avoid modifying the parameters of RTD in the process.Finally,the circuits were verified by simulation with extensively validated models.
Oxide Semiconductor Heterojunction Transistor with Negative Differential Transconductance for Multivalued Logic Circuits

Jong Chan Shin,Jae Hak Lee,Minho Jin,Haeyeon Lee,Jiyeon Kim,Jiho Lee,Chan Lee,Wonho You,Hyunkyu Yang,Youn Sang Kim

DOI: https://doi.org/10.1021/acsnano.3c09168

IF: 17.1

2024-01-05

ACS Nano

Abstract:Multivalued logic (MVL) technology is a promising solution for improving data density and reducing power consumption in comparison to complementary metal-oxide-semiconductor (CMOS) technology. Currently, heterojunction transistors (TRs) with negative differential transconductance (NDT) characteristics, which play an important role in the function of MVL circuits, adopt organic or 2D semiconductors as active layers, but it is still difficult to apply conventional CMOS processes. Herein, we...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Remora Optimized Dynamic Neural Network to Design Low-Power CNTFET Logic Gate Realization with Multiple-Valued Circuits

Sriram Sandhya Rani,Hameed Pasha Mohammad,Sheik Masthan

DOI: https://doi.org/10.1080/15325008.2024.2326854

IF: 1.276

2024-03-19

Electric Power Components and Systems

Abstract:The emerging trend of new digital technology leads to the requirement of small, faster, and low-power consumed processors. The advanced 5 G technology forces the usage of enhanced battery life, maximized spectral efficiency, etc., these can be achieved by the inclusion of a Carbon nanotube field-effect transistor (CNTFET). The proposed multiple-valued logic circuits (MVL) are designed using some of the unique features of the CNTFET such as high transconductance, setting of desired threshold voltage, and similar mobility of P and N-type devices. For designing low-power and optimized logic gate realization we have utilized the inherent binary gates along with the CMOS architecture. Further, an artificial intelligence approach known as Dynamic Neural Network (DNN) is adopted for the realization of logic gates in the MVL with the employment of lesser MVL operators. To enhance the parameter utilization of DNN with the help of tuning, we exploited the Remora Optimization algorithm (ROA). The results are obtained by conducting experiments on HFSS software. This approach is designed to reduce the static power dissipation, the number of logic gates, and network propagation delay. Compared to the existing methods, the proposed technique outlined a standard voltage of 32 nm that considers 0.9 V supply voltage. The result of our proposed method can be deviated by only 25% and thus outperforms all the other approaches. The standby power consumption of proposed approach is 2.12 W

engineering, electrical & electronic
Circuit Implementation of Multi-Thresholded Neuron (MTN) Using BiCMOS Technology

XL Zhu,JZ Shen,BY Chi,ZH Wang

DOI: https://doi.org/10.1109/ijcnn.2005.1555904

2006-01-01

Abstract:By analysing the principle of multi-thresholded neurons (MTNs), a methodology is developed for designing multi-thresholded neuron circuits (MTNCs). First, two n-channel MOS transistors are employed to design the voltage-mode synapse circuit with high simplicity and linearity. Second, a BiCMOS technique based circuit named judgement-converting switch (JCS) is proposed. The JCS whose threshold is voltage-controlled current signal, provides an ability of converting the voltage signal to current signal. Based on this possibility, an approach is put forward to design multi-thresholded judgement function circuits (MTJFCs). Finally, single MTNC is designed for implementing XOR operation at switch level. Simulation results with PSPICE show that the designed circuits not only have the correct logic function but also small propagation delay.
Multi-thresholded neuron and it's application in multi-valued logic

朱晓雷,沈继忠

DOI: https://doi.org/10.3785/j.issn.1008-973X.2004.05.012

2004-01-01

Abstract:The principle of multi-thresholded neuron (MTN) that implements nonlinear multi-zone partition in multi-dimension space was discussed. The advantage of MTN over single thresholded neuron was shown when applied to implement the XOR operation. An approach of employing MTN for basic operation in ternary logic was proposed to achieve arbitrary ternary functions in neural networks. Based on it, a method was developed for implementation of an arbitrary multi-value functions with single MTN. The proposed method is simple, canonical, effective, and can reduce the number of neurons and connecting lines in neural networks.
Voltage-Mode Multi-Valued Schmitt Trigger with Neuron-MOS Transistors

Guo Qiang Hang,Xuan Chang Zhou,Dan Yan Zhang,Yang Yang

DOI: https://doi.org/10.4028/www.scientific.net/amm.273.310

2013-01-01

Applied Mechanics and Materials

Abstract:A novel design scheme of multiple-valued Schmitt trigger using neuron-MOS transistors is presented. By controlling the voltages of the multiple-input gates, the neuron-MOS literal circuits with hysteresis characteristics are firstly designed. Then, the transmission switches used to pass quaternary signal are controlled by the outputs of these literal circuits to realize three hysteresis loops of quaternary Schmitt circuit. The benefit of the proposed quaternary Schmitt trigger is that the circuit can be fabricated by standard CMOS process with a 2-ploy layer. The three hysteresis loops are fully adjustable by sizing the ratio of capacitive coupling coefficients. The effectiveness of the proposed Schmitt trigger has been validated by HSPICE simulation results with TSMC 0.35μm 2-ploy 4-metal CMOS technology, and the discrepancy of hysteresis values between the simulated and theoretical results is smaller than 6%.
Looking Beyond 0 and 1: Principles and Technology of Multi‐Valued Logic Devices

Maksim Andreev,Seunghwan Seo,Kil‐Su Jung,Jin‐Hong Park

DOI: https://doi.org/10.1002/adma.202108830

IF: 29.4

2022-07-31

Advanced Materials

Abstract:Ever since the invention of solid‐state transistors, binary devices have dominated the electronics industry. Although the binary technology links the natural property of devices to be in the ON or OFF state with two logic levels, it provides the least possible information content per interconnect. Multi‐valued logic (MVL) has long been considered as a means of improving the computation efficiency and reducing the power consumption of modern chips. In view of the power density limits of the conventional complementary metal–oxide–semiconductor technology, MVL technologies have recently gained even more attention, and various MVL unit devices based on conventional and emerging materials have been proposed. Herein, we overview the achievements toward the development of compact MVL unit devices. First, we introduce basic principles of MVL technologies by describing methods of obtaining multiple logic states and discussing radix‐related aspects of MVL computation. Next, we classify and overview MVL unit devices with emphasis on principles of operation, technologies, and applications. Finally, we provide a comparative discussion of strengths and weaknesses for each class of MVL devices and conclude with the outlook for the MVL field. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
BC-MVLiM: A Binary-Compatible Multi-Valued Logic-in-Memory Based on Memristive Crossbars

Yanan Sun,Zhi Li,Weiyi Liu,Weifeng He,Qin Wang,Zhigang Mao

DOI: https://doi.org/10.1109/tcsi.2023.3241441

2023-01-01

Abstract:Logic-in-memory with memristive crossbars is an attractive approach for realizing beyond von Neumann architectures. Multi-valued logic (MVL) containing more than two logic levels can enhance the computing speed with reduced number of logic operations. In this paper, a binary-compatible multi-valued logic-in-memory (BC-MVLiM) scheme is proposed with memristive dual-crossbars where both inputs and outputs are represented by the multi-level cells of memristors. Both of the binary and multiple-valued logic operations can be implemented in the proposed BC-MVLiM scheme depending on the radix of inputs. The proposed BC-MVLiM circuitry supports multiple row-wise and column-wise logic gates with multiple fan-ins and fan-outs for binary and ternary systems by leveraging both inter- and intra-crossbar operations. Experimental results show that the proposed BC-MVLiM-based multi-digit adder enhances the computation speed by up to 76.10% and 83.82%, for binary and ternary systems, respectively, as compared with the previously published memristive logic designs. By preventing the errors from propagating across multiple stages, the error rate of proposed BC-MVLiM is also reduced by up to 98.20% compared to the previous memristive logic designs in the presence of device variations.
High Speed, Low Resource and Non-volatile MTJ-CMOS Hybrid Logical Circuits

Jianjun Chen,Ningyuan Yin,Zhiyi Yu

DOI: https://doi.org/10.1109/icsict.2018.8564892

2018-01-01

Abstract:Magnetic tunnel junction (MTJ) device, a nonvolatile spintronics device, draws wide attention for its low current drive, non-volatility, small size, infinite erasure, and low standby power. It is widely used in magnetic random-access memory (MRAM) or embedded in CMOS logical circuits. In this paper, a novel high speed, low resource and non-volatile MTJ-CMOS hybrid logical circuit structure is proposed, which consists of Multi Voltage controlled Multi-Write (MVMW) write circuit and High-Speed Sense Amplifier (HSSA) circuit. The MVMW write circuit enhances the write speed by shortening the critical path while achieving two independent write controls of the MTJs. Also, a voltage comparator sense amplifier is employed to increase the read speed (about 110ps). By using a dynamic compact MTJ model and 55 nm CMOS design kit, we designed a circuit architecture which can be used to form all kinds of logical computations. An AND/NAND logical is used to demonstrate functionality of the architecture and compared it with a traditional MTJ-CMOS hybrid circuit. The proposed non-volatile MTJ-CMOS hybrid circuit uses only 62.5% of resources, achieving a 4.37X write speed and a 2.64X read speed. The overall average speed increases 3.12 times with similar power consumption. Moreover, it is compatible for asynchronous circuits design.
The Multi-input MRL Logic Gate and Its Application

Li Qu,Xiaole Cui,Xiaoyan Xu,Xiaoxin Cu,Ye Ma

DOI: https://doi.org/10.1109/edssc.2019.8753985

2019-01-01

Abstract:This paper discusses the design constraints on the multi-input Memristor Ratioed Logic (MRL) AND and OR gates, and it is found out that the number of inputs is limited by the resistance ratio between the high resistance and low resistance values. A design case of a 4-1 multiplexer with the multi-input MRL gates is presented. The simulation results show that it has a smaller area and higher speed compared with that of the counterpart with the two-input MRL gates.
A MoS2-based coplanar neuron transistor for logic applications

S G Hu,Y Liu,H K Li,T P Chen,Q Yu,L J Deng

DOI: https://doi.org/10.1088/1361-6528/aa6b47

IF: 3.5

2017-05-26

Nanotechnology

Abstract:The human brain is an extremely complex system of 1010-1011 neurons. To construct brain-like neuromorphic hardware, the neuron unit should be implemented effectively. Here, we report a neuron transistor based on a MoS2 flake, which has summation and threshold functions similar to biological neurons and may act as a basic neuron unit in neuromorphic hardware. The neuron transistor is composed of a floating gate and two control gates. A heavily doped silicon substrate serves as the floating gate, while the two control gates are capacitively coupled with the floating gate. The neuron transistor can be well controlled by the two control gates individually or simultaneously. The drain current can be modulated by the input voltages at the control gates. While the current response of the neuron transistor has a large dependence on the magnitude of the input signal, it shows little dependence on the frequency of the input signal. To demonstrate the potential neuromorphic application of the neuron transistor, functions including abacus-like function, AND logic and OR logic are realized in the neuron transistor.
A Survey of Memristive Threshold Logic Circuits

Akshay Kumar Maan,Deepthi Anirudhan Jayadevi,Alex Pappachen James

DOI: https://doi.org/10.1109/tnnls.2016.2547842

IF: 14.255

2017-08-01

IEEE Transactions on Neural Networks and Learning Systems

Abstract:In this paper, we review different memristive threshold logic (MTL) circuits that are inspired from the synaptic action of the flow of neurotransmitters in the biological brain. The brainlike generalization ability and the area minimization of these threshold logic circuits aim toward crossing Moore's law boundaries at device, circuits, and systems levels. Fast switching memory, signal processing, control systems, programmable logic, image processing, reconfigurable computing, and pattern recognition are identified as some of the potential applications of MTL systems. The physical realization of nanoscale devices with memristive behavior from materials, such as TiO<sub>2</sub>, ferroelectrics, silicon, and polymers, has accelerated research effort in these application areas, inspiring the scientific community to pursue the design of high-speed, low-cost, low-power, and high-density neuromorphic architectures.

computer science, artificial intelligence, theory & methods,engineering, electrical & electronic, hardware & architecture

Possibility Of Combined Use Of Neuron-Mos And Rtd In Multi-Valued Logic Circuits

Design of probabilistic-based Markov Random Field logic gates in 65nm CMOS technology

Multi-valued Logic Design Methodology with Double Negative Differential Resistance Transistors

Design of Nano-Scale Noise Tolerant CMOS Logic Circuits Based on Probabilistic Markov Random Field Approach

Easily Cascaded Memristor-CMOS Hybrid Circuit for High-Efficiency Boolean Logic Implementation

Flexible Memristor-Based LUC and Its Network Integration for Boolean Logic Implementation

Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM) Based Ternary Combinational Logic Circuits

A Novel Nanosheet Reconfigurable Field Effect Transistor with Dual-Doped Source/drain

A Novel TMOSFET Ternary Inverter Based on Hybrid Conduction Mechanism

Design methodology of ternary logic circuit on resonant tunneling diode

Oxide Semiconductor Heterojunction Transistor with Negative Differential Transconductance for Multivalued Logic Circuits

Remora Optimized Dynamic Neural Network to Design Low-Power CNTFET Logic Gate Realization with Multiple-Valued Circuits

Circuit Implementation of Multi-Thresholded Neuron (MTN) Using BiCMOS Technology

Multi-thresholded neuron and it's application in multi-valued logic

Voltage-Mode Multi-Valued Schmitt Trigger with Neuron-MOS Transistors

Looking Beyond 0 and 1: Principles and Technology of Multi‐Valued Logic Devices

BC-MVLiM: A Binary-Compatible Multi-Valued Logic-in-Memory Based on Memristive Crossbars

High Speed, Low Resource and Non-volatile MTJ-CMOS Hybrid Logical Circuits

The Multi-input MRL Logic Gate and Its Application

A MoS2-based coplanar neuron transistor for logic applications

A Survey of Memristive Threshold Logic Circuits