Abstract:Isotopic enrichment offers cutting-edge properties of materials opening exciting research and development opportunities. In semiconductors, reached progress of ultimate control in growth and doping techniques follows nowadays the high level isotopic purification. This requires deep understanding of isotopic disorder effects and techniques of their effective determination. Isotopic content of both crystal lattice and impurity centers cause the effects, which can be examined by different optical techniques. While disorder in the host lattice can be straight forward evaluated by inelastic light scattering or by SIMS measurements, determination of isotopic contributions of many orders less presented impurities remains challenging and usually observed in high-resolution photoluminescence or optical absorption spectra. Boron-doped diamonds exhibit complex infrared absorption spectra while boron-related luminescence remains unobserved. Boron, as a most light element acting as a hydrogen-like dopant in elemental semiconductors, has a largest relative difference in its isotope masses, and by this, cause the largest isotopic disorder in semiconductors, including diamond, an elemental semiconductor with the lightest atomic mass of a host lattice. This enables an access to the isotopic constitution of boron in diamond by infrared absorption spectroscopy. By comparison of low-temperature absorption spectra of a natural (20% of 10B and 80% of 11B isotopes) and 11B enriched (up to 99%) doped diamonds we differentiate the intracenter transitions related to 10B and to 11B isotopes. We have found that the isotopic spectral lines of the same boron intracenter transition are separated with the energy of about 0.7 meV. This is the largest impurity isotopic shift ever observed in semiconductors doped by hydrogen-like impurity centers.

Study on Depth Profiles of Hydrogen in Boron-Doped Diamond Films by Elastic Recoil Detection Analysis

HYDROGEN AND BORON CONCENTRATIONS IN DOPED HYDROGENATED AMORPHOUS SILICON-CARBON FILMS MEASURED BY NUCLEAR-REACTION ANALYSIS

Ab Initio Study of Hydrogen–Boron Interactions in Diamond Films

Ab initio study of hydrogen-boron interactions in diamond films.

Effects of hydrogen on electronic properties of doped diamond

A Positron Annihilation Study on the Defect Properties of Doped Diamond Films

Electronic Structures of Hydrogenated and Oxygenated Boron-Doped Diamond Films

Study of Electrical Conductivity in Boron/Hydrogen-Doped Diamond Film

Boron-Doping Effects on Local Structures of Semiconducting Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Thin Films Fabricated via Coaxial Arc Plasma: an X-ray Absorption Spectroscopic Study

Effect of B/C Ratio on the Physical Properties of Highly Boron-Doped Diamond Films

Study of Hydrogen Distribution in Materials Using Proton Elastic Scattering Analysis and Coincidence Method

STUDY OF BORON-DOPED DIAMOND FILMS BY HOT FILAMENT CVD

Investigation of Low-Resistivity from Hydrogenated Lightly B-doped Diamond by Ion Implantation

Microhardness Study of Cathode-Mounted Amorphous Hydrogenated Boron Carbide

Microhardness, Structure, and Composition Study of Amorphous Hydrogenated Boron Carbide

Microstructure and Field Electron Emission Properties of Boron Doped Diamond Films

Electrical and Photoconductive Properties of Boron-Doped Potycrystalline Diamond Films

Resolving isotope splitting of boron-related intracenter transitions in diamond by infrared absorption spectroscopy

Roles Of Hydrogen Dilution On The Microstructural And Optoelectronic Properties Of B-Doped Nanocrystalline Si : H Thin Films

Incorporation of hydrogen in diamond thin films

First principles study of structural, electronic and vibrational properties of heavily boron-doped diamond