HYDROGEN AND BORON CONCENTRATIONS IN DOPED HYDROGENATED AMORPHOUS SILICON-CARBON FILMS MEASURED BY NUCLEAR-REACTION ANALYSIS

FQ ZHANG,GH CHEN,DY HE

DOI: https://doi.org/10.1063/1.101193

IF: 4

1989-01-01

Applied Physics Letters

Abstract:Hydrogen concentration, boron concentration, and their depth profiles in boron-doped hydrogenated amorphous silicon-carbon films have been measured by nuclear reaction analysis. We find that the concentrations of hydrogen and boron in the films depend on the doping gas ratio of B2H6 to SiH4+CH4. With the increase of the boron doping gas ratio from 10−4 to 10−2, the hydrogen concentration decreases from 38.7 to 6.2 at. % and the boron concentration increases from 0.0094 to 1.2 wt. %. A simple discussion for the results obtained is also presented.