Abstract:Microbumps play a crucial role in interlayer interconnections for advanced packaging. Among the prevalent microbump structures are Cu/Sn and Cu/Ni/Sn configurations. However, as the bump size continues to shrink, excessive Kirkendall voids tend to form in Cu/Sn microbumps, leading to potential reliability issues. While Cu/Ni/Sn structures can suppress Kirkendall void formation, Ni3Sn4 intermetallic compound (IMC) exhibits inferior physical properties compared to Cu3Sn and Cu6Sn5. In this study, a novel Cu/Ni/Cu/Sn1.8Ag (CNCT) Sn-rich microbump structure with controlled Cu thickness is proposed to suppress Kirkendall void formation while promoting Cu6Sn5 and Cu3Sn as interfacial IMCs. A Ni barrier layer is inserted to partition the Cu pillar and impede Cu atom replenishment from the bottom side. The remaining Cu pillar at the top is designed to be 3μm thick, which is intended to be fully consumed by 8μm Sn1.8Ag solder while simultaneously serving as redundant protection for the bottom Cu pillar against unexpected Sn spillage. The effects of high temperature storage (HTS) at 150°C on IMC evolution in CNCT microbump bonding were investigated for 1500hours. No significant voids were observed at the bonding interface during HTS. Interfacial positions recorded from 0 to 500hours show that the Cu3Sn IMC grows unidirectionally toward the Cu side but not toward the Sn side, indicating a greater diffusion flux of Sn atoms compared to Cu atoms. The diffusion coefficients of Cu in Cu3Sn (DCu,ε), Cu6Sn5 (DCu,η), and Sn in Cu3Sn (DSn,ε), Cu6Sn5 (DSn,η) at 150°C were calculated as 1.36×10-18m2/s, 5.01×10-19m2/s, 9.53×10-19m2/s and 1.10×10-18m2/s, respectively. The dramatic decrease of DCu,η suggests that the diffusion capacity of Cu atoms into Sn is significantly suppressed. The notable transformation of Cu3Sn to Cu6Sn5 occurred after 500hours. By 1500hours, Cu3Sn was greatly consumed, and the bonding interface tended to form a stable Cu/Ni/Cu6Sn5/Ni/Cu structure. Diffusion models were established and discussed to elucidate the mechanisms governing both stages.

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