Abstract:With the rapid development of printable electronics, printed thin film transistors (TFTs) have attracted more and more attention due to their wide applications in novel applications including OLED, LED and QLED displays, E‐paper, and printed logic gates and circuits, neuromorphic electronics and wearable electronics.[1‐10] It is well‐known that performance of printed TFTs are largely depended on performance of printable semiconductor inks. Metal oxide and carbon nanotubes have been regarded as one of promising semiconductors for printed TFTs, since they show excellent electrical properties, solubility, high chemical and physical stability[1‐10]. In this work, we reported some new progresses of large‐scale and high‐performance printed carbon nanotube and metal oxide TFTS and their applications, including CMOS‐like gates, hybrid CMOS inverters and neuromorphic electronics. Printed SWCNT TFTs and metal oxide TFTs (64×64 arrays) with excellent electrical properties have been constructed on silicon and glass substrates. Both of them showed good mobility (more than 10 cm2 V‐1 s‐1) and high on/off ratios (107). Hybrid CMOS inverters based on printed metal oxide TFTs and carbon nanotube TFTs exhibited excellent properties with noise margin of 85%, voltage gain of 50, and low power consumption of 0.4 nW (Figure 1). Furthermore, flexible printed CMOS‐like inverters based on printed carbon nanotube TFTs showed with noise margin of 80%, voltage gain of more than 100, and accepted power consumption at low operation voltage (Figure 1).

High Performance Printed Aligned Carbon Nanotube Transistors on Both Rigid and Flexible Substrates for Transparent Electronics

Transparent Flexible Organic Thin-Film Transistors That Use Printed Single-Walled Carbon Nanotube Electrodes

Fully transparent solution-processed carbon nanotube thin film transistors on a flexible substrate

Transparent All-Carbon-Nanotube Thin-film Transistors

Transparent driving thin-film transistor circuits based on uniformly grown single-walled carbon nanotubes network

Integration and Characterization of Transparent Thin Film Transistors with Carbon Nanotubes As Aligned Channel and Electrodes

Flexible, Stretchable, Transparent Conducting Films Made from Superaligned Carbon Nanotubes

Thin‐Film Transistors: Polyvinyl Alcohol/SiO2 Hybrid Dielectric for Transparent Flexible/Stretchable All‐Carbon‐Nanotube Thin‐Film‐Transistor Integration (adv. Electron. Mater. 5/2020)

43.1: Invited Paper: Large‐area and High‐performance Printed Carbon Nanotube and Metal Oxide Thin Film Transistors and Their Applications

A novel thin-film transistor using carbon nanotubes as both channel and electrodes

High-Performance Carbon Nanotube Thin-Film Transistor Technology

Flexible Logic Circuits Based on Top-Gate Thin Film Transistors with Printed Semiconductor Carbon Nanotubes and Top Electrodes

Polyvinyl Alcohol/SiO2 Hybrid Dielectric for Transparent Flexible/Stretchable All-Carbon-Nanotube Thin-Film-Transistor Integration

Low-voltage High-Performance Flexible Digital and Analog Circuits Based on Ultrahigh-Purity Semiconducting Carbon Nanotubes

High-Performance Flexible a-IGZO TFTs Adopting Stacked Electrodes and Transparent Polyimide-Based Nanocomposite Substrates

Highly Transparent and Transferable Ultralong Carbon Nanotube Networks for Transparent Wearable Electronics

High-Mobility Transparent Thin-Film Transistors with an Sb-Doped Sno2 Nanocrystal Channel Fabricated at Room Temperature

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature

Fully Transparent Thin-Film Transistor Devices Based on Sno2 Nanowires

Flexible CMOS Integrated Circuits Based on Carbon Nanotubes with Sub-10 Ns Stage Delays