Metal-Silicene Interaction Studied by Scanning Tunneling Microscopy

Zhi Li,Haifeng Feng,Jincheng Zhuang,Na Pu,Li Wang,Xun Xu,Weichang Hao,Yi Du
DOI: https://doi.org/10.1088/0953-8984/28/3/034002
2015-01-01
Journal of Physics Condensed Matter
Abstract:Ag atoms have been deposited on 3 x 3 silicene and root 3 x root 3 silicene films by molecular beam epitaxy method in ultrahigh vacuum. Using scanning tunneling microscopy and Raman spectroscopy, we found that Ag atoms do not form chemical bonds with both 3 x 3 silicene and root 3 x root 3 silicene films, which is due to the chemically inert surface of silicene. On 3 x 3 silicene films, Ag atoms mostly form into stable flat- top Ag islands. In contrast, Ag atoms form nanoclusters and glide on silicene films, suggesting a more inert nature. Raman spectroscopy suggests that there is more sp2 hybridization in root 3 x root 3 than in root 7 x root 7/3 x 3 silicene films.
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