Abstract:We report on the total-energy electronic-structure calculations on the basis of the density-functional theory that clarify atomic and electronic structures of the silicene on the Ag(111), the hexagonal BN, and the hydrogen-processed Si(111) surfaces. On the Ag(111) surfaces which are most commonly used as substrates for the silicene in current experiments, we find several stable and metastable structures with the 4 x 4, root 13 x root 13, and 2 root 3 x 2 root 3 periodicities with respect to the 1 x 1 Ag(111) lateral cell within the total-energy difference of 70 meV per Si atom. Those stable structures show the excellent agreement with the scanning tunneling microscopy measurement in their structural characteristics. The metastable structures with comparable total energies await experimental observations. In all the stable and metastable structures, the silicene is buckled substantially so that the pi state rehybridizes with the sigma state, leading to the pi+ state, and then the linear energy dispersion peculiar to the Dirac electrons disappears in several cases associated with the opening of the energy gap. Moreover, we find that the substantial mixing of the pi+ state, generated in such a way, with the states of the Ag atoms in the substrate converts the pi+ state to the mixed pi+ state and thus makes the state shift downwards or upwards, eventually annihilating Dirac electrons near the Fermi level. The absence of Dirac electrons caused in this way is found to be common to all the stable and metastable structures of the silicene on the Ag(111) substrates. We also find that the interaction between the pi+ and the substrate orbitals should be weak enough to preserve Dirac electrons and at the same time be sizable to keep the system stable. We then propose two specific substrates as good candidates for the silicene with Dirac electrons, i.e., hexagonal BN and the hydrogen-processed Si(111) surface. We clarify that the silicene on those substrates are stable enough with the binding energy comparable to or twice that of the graphite and preserve Dirac electrons near the Fermi level.

Variable Coupling Strength of Silicene on Ag(111)

Metal-Silicene Interaction Studied by Scanning Tunneling Microscopy

Electronic Structure Of Silicene On Ag(111): Strong Hybridization Effects

Crossover Between Silicene and Ultra-Thin Si Atomic Layers on Ag(111) Surfaces

Formation, Structures and Electronic Properties of Silicene Oxides on Ag(111)

Various Atomic Structures of Monolayer Silicene Fabricated on Ag(111)

Single Molecule’s Conductance Depending On Its Orientation

Strong Band Hybridization Between Silicene and Ag(1 1 1) Substrate

The fate of the 2 root 3 x 2 root 3 R(30 degrees) silicene phase on Ag(111)

Absence of Dirac Electrons in Silicene on Ag (111) Surfaces

Absence And Presence Of Dirac Electrons In Silicene On Substrates

Structural Tristability And Deep Dirac States In Bilayer Silicene On Ag(111) Surfaces

Tuning the Band Gap in Silicene by Oxidation

Observation of Van Hove Singularities in Twisted Silicene Multilayers.

Investigation of Electron-Phonon Coupling in Epitaxial Silicene by In-situ Raman Spectroscopy

The fate of the 2√3 × 2√3R(30°) silicene phase on Ag(111)

Band structure of hydrogenated silicene on Ag(111): Evidence for silicane

Coexistence of multiple silicene phases in silicon grown on Ag(111)

Mining Single-Electron Spectra of the Interface States from a Supercell Band Structure of Silicene on an Ag ( 111 ) Substrate with Band-Unfolding Methodology

Tunable Electronic and Optical Properties of Monolayer Silicane under Tensile Strain: a Many-Body Study.

Tight-binding model and ab initio calculation of silicene with strong spin-orbit coupling in low-energy limit