Al2O3–Gd2O3 Double-Films Grown on Graphene Directly by H2O-assisted Atomic Layer Deposition

Li Zheng,Xinhong Cheng,Duo Cao,Dongliang Zhang,Zhongjian Wang,Dawei Xu,Chao Xia,Lingyan Shen,Yuehui Yu

DOI: https://doi.org/10.1039/c4ra07144a

IF: 4.036

2014-01-01

RSC Advances

Abstract:Al2O3–Gd2O3 double-films were directly grown on graphene with the assistance of H2O by atomic layer deposition without any functionalization.

What problem does this paper attempt to address?

Direct Growth of High-Quality Al2o3 Dielectric on Graphene Layers by Low-Temperature H2o-Based Ald

Youwei Zhang,Zhijun Qiu,Xinhong Cheng,Hong Xie,Haomin Wang,Xiaomin Xie,Yuehui Yu,Ran Liu

DOI: https://doi.org/10.1088/0022-3727/47/5/055106

2014-01-01

Abstract:A thin Al2O3 dielectric film was directly grown onto graphene layers without any surface treatment prior to H2O-based atomic layer deposition for the first time. The growth mechanism of Al2O3 dielectric film has been studied by changing the growth temperature and purge time. We found that the film morphology was influenced by the amount and distribution of physically adsorbed precursor molecules on the graphene, especially by physically adsorbed H2O molecules. Within an optimal temperature window, conformal and uniform Al2O3 thin films were obtained as confirmed by atomic force microscopy and transmission electron microscopy results. Raman spectroscopy revealed that no extra defects are generated in the graphene layers. Furthermore, the low leakage current and interface traps in dual-gated graphene field-effect transistors demonstrate the high-quality dielectric/graphene stack.
Preparation and Wettability of Zn–Al Layered Double Hydroxide Film Directly Grown on Highly Porous Anodic Alumina Oxide Template

Feng Yang,Bo Yu Xie,Jing Zhi Sun,Ha Ke Jin,Mang Wang

DOI: https://doi.org/10.1016/j.matlet.2007.08.069

IF: 3

2008-01-01

Materials Letters

Abstract:Zinc-aluminum layered double hydroxide (Zn-Al LDH) thin films were prepared by direct precipitation on the surface of porous anodic alumina oxide (AAO) template. The Zn-Al LDH was assigned to Zn6Al12(OH)(16)CO3.nH(2)O according to the XRD and EDX data. The nano-pores provided channels and the nano-sized wall-edges for supplying Al3+ and highly active reaction sites, thereby the Zn-Al LDH films can be grown more efficiently on porous AAO membrane than those on flat bulk alumina oxide surface. The water contact angle (CA) of the as-prepared Zn-Al LDH films was measured to be 122 degrees, indicating a hydrophobic surface, but after calcination at 600 degrees C for 2 h, the water CA became 65 degrees, suggesting a hydrophilic surface. Comparative analyses of the surface morphological characteristics and elements with respect to the as-prepared and calcined films implied a thermal induced reconstruction of the Zn-Al LDH structure, which was ascribed to the changes of surface wettability. (C) 2007 Elsevier B.V. All rights reserved.
A Facile Way to Deposit Conformal Al2O3 Thin Film on Pristine Graphene by Atomic Layer Deposition

Yan-Qiang Cao,Zheng-Yi Cao,Xin Li,Di Wu,Ai-Dong Li

DOI: https://doi.org/10.1016/j.apsusc.2013.10.133

IF: 6.7

2014-01-01

Applied Surface Science

Abstract:It is important to prepare high-quality, ultrathin dielectric insulators on graphene for the integration of graphene field-effect transistors. Here, we present a novel and facile approach to deposit high-kappa dielectrics (such as Al2O3) by atomic layer deposition (ALD) through water physisorption. Usually it is difficult to grow Al2O3 thin films on pristine graphene directly using H2O as precursor. The pretreatment of graphene with ALD H2O pulses before the deposition can enhance the Al2O3 coverage on pristine graphene, but the film is not continuous yet. It is found that uniform Al2O3 thin films can easily depositon the graphene after H2O dipping pretreatment for similar to 4-5 h. It is ascribed to the fact that the physisorbed water molecules on the surface of graphene as nucleation sites react with the metal precursor of trimethylaluminum (TMA) to form Al2O3 dielectric films. Raman spectra reveal that no defects are produced on graphene surface via this method. These results indicate that water functionalization is a promising pathway to achieve scaled gate dielectrics on graphene without introducing any defects. (C) 2013 Elsevier B.V. All rights reserved.
Hydrophobic Surface Treatment and Interrupted Atomic Layer Deposition for Highly Resistive Al2O3 Films on Graphene

Jae Ho Jeon,Sahng-Kyoon Jerng,Kamran Akbar,Seung-Hyun Chun

DOI: https://doi.org/10.1021/acsami.6b09531

2016-11-02

Abstract:The deposition of thin and uniform dielectric film on graphene is an important step for electronic applications. Here, we tackled this problem by combining a simple chemical treatment of graphene surface and a modification of standard atomic layer deposition (ALD). Instead of common approaches trying to convert hydrophobic graphene surface into hydrophilic one, we took the opposite way by applying a self-assembled-monolayer, hexamethyldisilazane (HMDS) to make defect-independent, more hydrophobic surface condition. In addition, Al2O3 ALD using trimethylaluminum (TMA) and water (H2O) was interrupted several times and the surface was air-exposed during the interruption to seed the following ALD processes. This combination greatly improved the uniformity of dielectric film and accomplished a successful deposition of 10 nm-thick Al2O3 on graphene with subnanometer roughness except for the locations of wrinkles and poly(methyl methacrylate) (PMMA) residues. Electrochemical impedance measurements revealed a 300-fold increase in the charge-transfer resistance by employing this modified ALD process. No change in the Raman spectra was observed after the dielectric film growth, demonstrating that the method proposed here is nondetrimental to the graphene quality.
Atomic Layer Deposition Growth and Characterization of Al2O3 Layers on Cu-Supported CVD Graphene

Peter Rafailov,Vladimir Mehandzhiev,Peter Sveshtarov,Blagoy Blagoev,Penka Terziyska,Ivalina Avramova,Kiril Kirilov,Bogdan Ranguelov,Georgi Avdeev,Stefan Petrov,Shiuan Huei Lin

DOI: https://doi.org/10.3390/coatings14060662

IF: 3.236

2024-05-24

Coatings

Abstract:The deposition of thin uniform dielectric layers on graphene is important for its successful integration into electronic devices. We report on the atomic layer deposition (ALD) of Al2O3 nanofilms onto graphene grown by chemical vapor deposition onto copper foil. A pretreatment with deionized water (DI H2O) for graphene functionalization was carried out, and, subsequently, trimethylaluminum and DI H2O were used as precursors for the Al2O3 deposition process. The proper temperature regime for this process was adjusted by means of the ALD temperature window for Al2O3 deposition onto a Si substrate. The obtained Al2O3/graphene heterostructures were characterized by Raman and X-ray photoelectron spectroscopy, ellipsometry and atomic force and scanning electron microscopy. Samples of these heterostructures were transferred onto glass substrates by standard methods, with the Al2O3 coating serving as a protective layer during the transfer. Raman monitoring at every stage of the sample preparation and after the transfer enabled us to characterize the influence of the Al2O3 coating on the graphene film.

materials science, multidisciplinary,physics, applied, coatings & films
Ultrathin Oxide Films by Atomic Layer Deposition on Graphene

Luda Wang,Jonathan J. Travis,Andrew S. Cavanagh,Xinghui Liu,Steven P. Koenig,Pinshane Y. Huang,Steven M. George,J. Scott Bunch

DOI: https://doi.org/10.1021/nl3014956

IF: 10.8

2012-06-22

Nano Letters

Abstract:In this paper, a method is presented to create and characterize mechanically robust, free-standing, ultrathin, oxide films with controlled, nanometer-scale thickness using atomic layer deposition (ALD) on graphene. Aluminum oxide films were deposited onto suspended graphene membranes using ALD. Subsequent etching of the graphene left pure aluminum oxide films only a few atoms in thickness. A pressurized blister test was used to determine that these ultrathin films have a Young's modulus of 154 ± 13 GPa. This Young's modulus is comparable to much thicker alumina ALD films. This behavior indicates that these ultrathin two-dimensional films have excellent mechanical integrity. The films are also impermeable to standard gases suggesting they are pinhole-free. These continuous ultrathin films are expected to enable new applications in fields such as thin film coatings, membranes, and flexible electronics.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
A Novel Method for Direct Growth of A Few-Layer Graphene on Al2o3 Film

Xiangye Liu,Tianquan Lin,Mi Zhou,Hui Bi,Houlei Cui,Dongyun Wan,Fuqiang Huang,Jianhua Lin

DOI: https://doi.org/10.1016/j.carbon.2013.12.064

IF: 10.9

2014-01-01

Carbon

Abstract:Direct growth of graphene on Al2O3 film is successfully achieved assisted with NiAl2O4 film on a SiO2 substrate by chemical vapor deposition at 800°C. The Ni particles are first uniformly separated out on the substrate, and play an important role in capturing carbon atoms and accelerating the nucleation to grow high quality graphene rooting on insulating Al2O3 film. The thickness of graphene films can be tuned from two layers to few layers (<10) by changing growth time. The continuous graphene films exhibit extremely excellent electrical transport properties with a sheet resistance of down to 18.5Ωsq−1. The graphene/Ni/Al2O3/SiO2 is used as the counter electrode of dye sensitized solar cell which achieves a photovoltaic efficiency of 7.62%.
Self-assembly, structures, and electrical properties of double-layered GO/α-Fe2O3/GO sandwich films

Yongan Niu,Jianming Feng,Zihang Shi,Xinyu Lu,Li Yang,Xin Zhang

DOI: https://doi.org/10.1016/j.ceramint.2022.01.201

IF: 5.532

2022-05-01

Ceramics International

Abstract:Functionalized α-Fe2O3 films were widely applied in electrochemical electrodes, energy conversion, and magnetic recording devices. However, the performance stability still needs be improved and evaluated, due to its high physical and chemical activity. Herein, graphene oxide (GO) was chosen to improve the structural stability of α-Fe2O3 films. The layered GO/α-Fe2O3/GO (GFG) sandwich films are successfully grown on ITO glass substrate by the self-assembly method in air-liquid interface. From cross-sectional morphologies, the double-layered GFG sandwich film displays the good stacking structures without delamination. According to XRD, UV–vis, and SEM analysis, the double-layered GFG sandwich film is uniformly composed of alternating GO and α-Fe2O3 layers with significant interlayer coupling. From cyclic voltammetry (CV) curves, these GFG sandwich films present the electrochemical oxidation and reduction peaks, which is weakened with the increasing of thickness. The Nyquist plot of double-layered GFG sandwich film has a larger semi-circle, indicating that the corrosion resistance is oubvious improved. The dielectric constant and dielectric loss of double-layered GFG sandwich film also show an obvious enhancement.

materials science, ceramics
Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition

Bruno Dlubak,Piran R. Kidambi,Robert S. Weatherup,Stephan Hofmann,John Robertson

DOI: https://doi.org/10.1063/1.4707376

2014-11-13

Abstract:We report on a large improvement in the wetting of Al2O3 thin films grown by un-seeded atomic layer deposition on monolayer graphene, without creating point defects. This enhanced wetting is achieved by greatly increasing the nucleation density through the use of polar traps induced on the graphene surface by an underlying metallic substrate. The resulting Al2O3/graphene stack is then transferred to SiO2 by standard methods.

Materials Science
Atomic-layer-deposited Nanostructures for Graphene-Based Nanoelectronics

Y. Xuan,Y. Q. Wu,T. Shen,M. Qi,M. A. Capano,J. A. Cooper,P. D. Ye

DOI: https://doi.org/10.1063/1.2828338

IF: 4

2008-01-01

Applied Physics Letters

Abstract:Graphene is a hexagonally bonded sheet of carbon atoms that exhibits superior transport properties with a velocity of 108cm∕s and a room-temperature mobility of >15000cm2∕Vs. How to grow gate dielectrics on graphene with low defect states is a challenge for graphene-based nanoelectronics. Here, we present the growth behavior of Al2O3 and HfO2 films on highly ordered pyrolytic graphite (HOPG) by atomic layer deposition (ALD). To our surprise, large numbers of Al2O3 and HfO2 nanoribbons, with dimensions of 5–200nm in width and >50μm in length, are observed on HOPG surfaces at growth temperature between 200 and 250°C. This is due to the large numbers of step edges of graphene on HOPG surfaces, which serve as nucleation sites for the ALD process. These Al2O3 and HfO2 nanoribbons can be used as hard masks to generate graphene nanoribbons or as top-gate dielectrics for graphene devices. This methodology could be extended to synthesize insulating, semiconducting, and metallic nanostructures and their combinations.
Carbon–Oxygen Radical Assisted Growth of Defect‐Free Graphene Films Using Low‐Temperature Chemical Vapor Deposition

Haiyang Liu,Yanglizhi Li,Yangfan Wu,Dingkun Qin,Xia Qiu,Zhen Wang,Qingyu Zhou,Shuming Yu,Qin Li,Haoxiang Li,Sheng Li,Chaojie Yu,Yueming Hu,Shenxing Wang,Buhang Chen,Xiaofeng Song,Jiawei Qiang,Lin Zhou,Yiwei Li,Nan Xu,Mengxi Liu,Wanjian Yin,Xiaoli Sun,Luzhao Sun,Zhongfan Liu

DOI: https://doi.org/10.1002/smll.202405854

IF: 13.3

2024-11-28

Small

Abstract:A Carbon–Oxygen radical assisted low‐temperature growth strategy is proposed, which affords defect‐free, wrinkle‐free, and single‐crystalline graphene films. A deep insight into the methanol precursor fueled growth process is made via DFT calculations, unveiling the methanol dissociation pathway and the roles of intermediate Carbon–Oxygen radicals in carbon attaching and assembling to graphene lattice without defect formation. Low‐temperature chemical vapor deposition growth of graphene films is a long‐term pursuit in the graphene synthesis field because of the low energy consumption, short heating‐cooling process and low wrinkle density of as‐obtained films. However, insufficient energy supply at low temperature (below 850 °C) usually leads to the difficulty in carbon source dissociation, graphene growth, and defect healing. Herein, a Carbon–Oxygen (C─O) radical assisted strategy is proposed for low‐temperature growth of defect‐free, wrinkle‐free, and single‐crystalline graphene films by using methanol precursor. We provide a deep insight into the growth process fueled by methanol precursor, unveiling the dissociation pathway of methanol and the roles of intermediate C─O radicals in carbon attaching and assembling to graphene lattice without defect formation. This method shows promising prospects in the cost‐effective production of high‐quality graphene films and provides inspiration for growing other 2D materials.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Ultrathin Graphdiyne Film on Graphene Through Solution-Phase Van Der Waals Epitaxy

Xin Gao,Yihan Zhu,Ding Yi,Jingyuan Zhou,Shishu Zhang,Chen Yin,Feng Ding,Shuqing Zhang,Xiaohui Yi,Jizheng Wang,Lianming Tong,Yu Han,Zhongfan Liu,Jin Zhang

DOI: https://doi.org/10.1126/sciadv.aat6378

IF: 13.6

2018-01-01

Science Advances

Abstract:Graphdiyne (GDY) is an ordered two-dimensional (2D) carbon allotrope comprising sp- and sp2-hybridized carbon atoms with high degrees of π-conjugation, which features a natural band gap and superior electric properties. However, the synthesis of one- or few-layer GDY remains challenging because of the free rotation around alkyne-aryl single bonds and the lack of thickness control. We report the facile synthesis of an ultrathin single-crystalline GDY film on graphene through a solution-phase van der Waals epitaxial strategy. The weak admolecule-substrate interaction at the heterojunction drastically relaxes the large lattice mismatch between GDY and graphene. It allows the fast in-plane coupling of admolecules and slow out-of-plane growth toward the formation of an incommensurately stacked heterostructure, which is composed of single-layer graphene and few-layer ABC-stacked GDY, as directly observed by electron microscopy and identified from Raman fingerprints. This study provides a general route not only to the bottom-up synthesis of intriguing 2D acetylenic carbon allotropes but also to the device fabrication for the direct measurement of their intrinsic electrical, mechanical, and thermal properties.
A Hybrid Mg–Al Layered Double Hydroxide/graphene Nanostructure Obtained Via Hydrothermal Synthesis

Xiaodong Zhao,Jian-Ping Cao,Jun Zhao,Guo-Hua Hu,Zhi-Min Dang

DOI: https://doi.org/10.1016/j.cplett.2014.05.031

IF: 2.719

2014-01-01

Chemical Physics Letters

Abstract:A hybrid Mg–Al layered double hydroxide/graphene (LDH–GR) material nanostructure has been fabricated by employing the hydrothermal treatment at 140°C for 10h. Graphene oxide is simultaneously reduced to graphene during the hydrothermal treatment. The LDH and LDH–GR have high degree of crystallinity and assembled layer structure, which is attributed to electrostatic interaction mechanism. The obtained hybrid nanostructure materials can be used as flame retardant or conductor of electricity and heat due to the combination of different properties arising from graphene and LDH.
Resolving the Nucleation Stage in Atomic Layer Deposition of Hafnium Oxide on Graphene

Bernhard C. Bayer,Adrianus I. Aria,Dominik Eder,Stephan Hofmann,Jannik C. Meyer

DOI: https://doi.org/10.48550/arXiv.1909.00712

2019-09-02

Materials Science

Abstract:The integration of two-dimensional (2D) materials with functional non-2D materials such as metal oxides is of key importance for many applications, but underlying mechanisms for such non-2D/2D interfacing remain largely elusive at the atomic scale. To address this, we here investigate the nucleation stage in atomic layer deposition (ALD) of the important metal oxide HfO2 on chemical vapor deposited graphene using atomically resolved and element specific scanning transmission electron microscopy (STEM). To avoid any deleterious influence of polymer residues from pre-ALD graphene transfers we employ a substrate-assisted ALD process directly on the as grown graphene still remaining on its Cu growth catalyst support. Thereby we resolve at the atomic scale key factors governing the integration of non-2D metal oxides with 2D materials by ALD: Particular to our substrate-assisted ALD process we find a graphene-layer-dependent catalytic participation of the supporting Cu catalyst in the ALD process. We further confirm at high resolution the role of surface irregularities such as steps between graphene layers on oxide nucleation. Employing the energy transfer from the scanning electron beam to in situ crystallize the initially amorphous ALD HfO2 on graphene, we observe HfO2 crystallization to non-equilibrium HfO2 polymorphs (cubic/tetragonal). Finally our data indicates a critical role of the graphene's atmospheric adventitious carbon contamination on the ALD process whereby this contamination acts as an unintentional seeding layer for metal oxide ALD nucleation on graphene under our conditions. As atmospheric adventitious carbon contamination is hard to avoid in any scalable 2D materials processing, this is a critical factor in ALD recipe development for 2D materials coating. Combined our work highlights several key mechanisms underlying scalable ALD oxide growth on 2D materials.
Improved epitaxy of ZnO films by regulating the layers of graphene

Ning Wang,Peng Wang,Fengzhi Wang,Haiping He,Jinyun Huang,Xinhua Pan,Guangming Zhu,Jiangbo Wang,Zhizhen Ye

DOI: https://doi.org/10.1016/j.apsusc.2022.152709

IF: 6.7

2022-05-01

Applied Surface Science

Abstract:Growth of ZnO film on graphene buffered sapphire substrate by plasma assisted molecular beam epitaxy (PAMBE) was investigated. Specifically, the surface morphology, crystal orientation and crystal quality of ZnO epitaxial layer and nucleation layer deposited on graphene with various thickness were analyzed by atomic force microscope (AFM), scanning electron microscope (SEM), high resolution X-ray diffraction (HRXRD), and high-resolution transmission electron microscope (HRTEM). The experiments showed that after buffered with double-layer graphene (DLG), six-fold symmetrical pits with the same orientation appeared on the successive ZnO film surface and the full width of half maximum (FWHM) of ZnO (002) plane rocking curve decreased to 769.3 arcsec. By comparing ZnO nucleation layer on graphene with different layers and checking the graphene by Raman spectroscopy, the mechanism for improving crystal quality of ZnO film grown on DLG was revealed. This study demonstrates the potential that high-crystal-quality ZnO film can be grown on graphene by plasma-assisted remote heteroepitaxy without limitation of the crystal mismatch and thermal mismatch between epitaxial film and substrate. It could be meaningful for the development of simplified growth technology of ZnO based films and devices.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Efficient Growth Of High-Quality Graphene Films On Cu Foils By Ambient Pressure Chemical Vapor Deposition

Libo Gao,Wencai Ren,Jinping Zhao,LaiPeng Ma,Zongping Chen,Huiming Cheng

DOI: https://doi.org/10.1063/1.3512865

IF: 4

2010-01-01

Applied Physics Letters

Abstract:We developed an ambient pressure chemical vapor deposition (CVD) for rapid growth of high-quality graphene films on Cu foils. The quality and growth rate of graphene films are dramatically increased with decreasing H-2 concentration. Without the presence of H-2, continuous graphene films are obtained with a mean sheet resistance of < 350 Omega/sq and light transmittance of 96.3% at 550 nm. Because of the ambient pressure, rapid growth rate, absence of H-2 and readily available Cu foils, this CVD process enables inexpensive and high-throughput growth of high-quality graphene films. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3512865]
Direct Growth of High Crystallinity Graphene from Water-Soluble Polymer Powders

Qiao Chen,Yujia Zhong,Meirong Huang,Guoke Zhao,Zhen,Hongwei Zhu

DOI: https://doi.org/10.1088/2053-1583/aab729

IF: 6.861

2018-01-01

2D Materials

Abstract:The use of solid-state carbon sources is effective to produce graphene by safe and low-cost chemical vapor deposition (CVD) process. Water-soluble polymers are generally environmentally friendly and have great potential on large-scale green production of graphene. Here, we systematically study the growth of graphene from water-soluble polymers on copper foils. Two different conversion ways are adopted to investigate the growth mechanism of graphene from water-soluble polymers. We find that the metal-binding functional group hydroxyl strongly influences the vaporization of water-soluble polymers on Cu foils, which hinders the formation of graphene films by rapid thermal treatment. In direct CVD process using water-soluble polymer powders as precursors, oxygenated functional groups in polymers can enhance the crystallinity of as-grown graphene in contrast to solid hydrocarbons without containing oxygen (e.g. polyethylene). Large and continuous graphene films of high quality are synthesized from polyvinyl alcohol and polyethylene glycol. Nitrogen doping in graphene can be easily realized by using nitrogen-containing water-soluble polymers (e.g. polyvinyl pyrrolidone).
Investigation of Chemical Vapor Deposited Graphene Film on Oxide Substrate

tao huang,lin chen,q q sun,peng zhou,david wei zhang

DOI: https://doi.org/10.4028/www.scientific.net/MSF.815.18

IF: 19

2015-01-01

Advanced Functional Materials

Abstract:Graphene is a novel two dimensional material with exceptional properties. Chemical vapor deposition of graphene on metal substrates is widely used to prepare high quality graphene film. However, the graphene films need to be transferred to oxide substrates for device applications. A chemical vapor deposition approach for direct growth of graphene films on zinc oxide was demonstrated in the present investigation. Raman spectra were used to characterize the grown graphene films. The impact of the growth temperature, time and gas flow ratio on the layer number and crystallite size of graphene was investigated.
High Loading Capacity and Wear Resistance of Graphene Oxide/Organic Molecule Assembled Multilayer Film

Li Chen,Gang Wu,Yin Huang,Changning Bai,Yuanlie Yu,Junyan Zhang

DOI: https://doi.org/10.3389/fchem.2021.740140

IF: 5.5

2021-11-29

Frontiers in Chemistry

Abstract:Taking advantage of the strong charge interactions between negatively charged graphene oxide (GO) sheets and positively charged poly(diallyldimethylammonium chloride) (PDDA), self-assembled multilayer films of (GO/PDDA) n were created on hydroxylated silicon substrates by alternating electrostatic adsorption of GO and PDDA. The formation and structure of the films were analyzed by means of water contact angle measurement, thickness measurement, atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). Meanwhile, tribological behaviors in micro- and macro- scale were investigated by AFM and a ball-on-plate tribometer, respectively. The results showed that (GO/PDDA) n multilayer films exhibited excellent friction-reducing and anti-wear abilities in both micro- and macro-scale, which was ascribed to the special structure in (GO/PDDA) n multilayer films, namely, a well-stacked GO–GO layered structure and an elastic 3D crystal stack in whole. Such a film structure is suitable for design molecular lubricants for MEMS and other microdevices.

chemistry, multidisciplinary
Atomic Layer Deposition of Metal Oxides on Pristine and Functionalized Graphene

Xinran Wang,Scott M. Tabakman,Hongjie Dai

DOI: https://doi.org/10.1021/ja8023059

IF: 15

2008-06-05

Journal of the American Chemical Society

Abstract:We investigate atomic layer deposition (ALD) of metal oxide on pristine and functionalized graphene. On pristine graphene, ALD coating can only actively grow on edges and defect sites, where dangling bonds or surface groups react with ALD precursors. This affords a simple method to decorate and probe single defect sites in graphene planes. We used perylene tetracarboxylic acid (PTCA) to functionalize the graphene surface and selectively introduced densely packed surface groups on graphene. Uniform ultrathin ALD coating on PTCA graphene was achieved over a large area. The functionalization method could be used to integrate ultrathin high-kappa dielectrics in future graphene electronics.

chemistry, multidisciplinary

Al2O3–Gd2O3 Double-Films Grown on Graphene Directly by H2O-assisted Atomic Layer Deposition

Direct Growth of High-Quality Al2o3 Dielectric on Graphene Layers by Low-Temperature H2o-Based Ald

Preparation and Wettability of Zn–Al Layered Double Hydroxide Film Directly Grown on Highly Porous Anodic Alumina Oxide Template

A Facile Way to Deposit Conformal Al2O3 Thin Film on Pristine Graphene by Atomic Layer Deposition

Hydrophobic Surface Treatment and Interrupted Atomic Layer Deposition for Highly Resistive Al2O3 Films on Graphene

Atomic Layer Deposition Growth and Characterization of Al2O3 Layers on Cu-Supported CVD Graphene

Ultrathin Oxide Films by Atomic Layer Deposition on Graphene

A Novel Method for Direct Growth of A Few-Layer Graphene on Al2o3 Film

Self-assembly, structures, and electrical properties of double-layered GO/α-Fe2O3/GO sandwich films

Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition

Atomic-layer-deposited Nanostructures for Graphene-Based Nanoelectronics

Carbon–Oxygen Radical Assisted Growth of Defect‐Free Graphene Films Using Low‐Temperature Chemical Vapor Deposition

Ultrathin Graphdiyne Film on Graphene Through Solution-Phase Van Der Waals Epitaxy

A Hybrid Mg–Al Layered Double Hydroxide/graphene Nanostructure Obtained Via Hydrothermal Synthesis

Resolving the Nucleation Stage in Atomic Layer Deposition of Hafnium Oxide on Graphene

Improved epitaxy of ZnO films by regulating the layers of graphene

Efficient Growth Of High-Quality Graphene Films On Cu Foils By Ambient Pressure Chemical Vapor Deposition

Direct Growth of High Crystallinity Graphene from Water-Soluble Polymer Powders

Investigation of Chemical Vapor Deposited Graphene Film on Oxide Substrate

High Loading Capacity and Wear Resistance of Graphene Oxide/Organic Molecule Assembled Multilayer Film

Atomic Layer Deposition of Metal Oxides on Pristine and Functionalized Graphene