Abstract:Atomic scale control of the thickness of thin film makes atomic layer deposition highly advantageous in the preparation of high quality super-lattices. However, precisely controlling the film chemical stoichiometry is very challenging. In this study, we deposited SiOx film with different stoichiometry by plasma enhanced atomic layer deposition. After reviewing various deposition parameters like temperature, precursor pulse time, and gas flow, the silicon dioxides of stoichiometric (SiO2) and non-stoichiometric (SiO1.8 and SiO1.6) were successfully fabricated. X-ray photo-electron spectroscopy was first employed to analyze the element content and chemical bonding energy of these films. Then the morphology, structure, composition, and optical characteristics of SiOx film were systematically studied through atomic force microscope, transmission electron microscopy, X-ray reflection, and spectroscopic ellipsometry. The experimental results indicate that both the mass density and refractive index of SiO1.8 and SiO1.6 are less than SiO2 film. The energy band-gap is approved by spectroscopic ellipsometry data and X-ray photo-electron spectroscopy O 1s analysis. The results demonstrate that the energy band-gap decreases as the oxygen concentration decreases in SiOx film. After we obtained the Si-rich silicon oxide film deposition, the SiO1.6/SiO2 super-lattices was fabricated and its photoluminescence (PL) property was characterized by PL spectra. The weak PL intensity gives us greater awareness that more research is needed in order to decrease the x of SiOx film to a larger extent through further optimizing plasma-enhanced atomic layer deposition processes, and hence improve the photoluminescence properties of SiOx/SiO2 super-lattices.

Depth Profile of Oxygen in SiO_xN_y Functional Gradient Thin Film Using 4 He O Resonance Scattering

Plasma-Enhanced Vapor Deposition Amorphous SiOx∶H(0≤x≤2.0)Films by Infrared Absorption Spectroscopy

A study of plasma-deposited amorphous SiOx:H (0⩽x⩽2.0) films using infrared spectroscopy

Optical Properties Study of Silicon Oxynitride Films Deposited by RF Magnetron Sputtering

Study of Gradient Thin Film Material Produced by PECVD

Profile of Optical Constants of Sio2 Thin Films Containing Si Nanocrystals

Investigation of HfO2 Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry

Deposition of SiOxNy films as gate insulator via r.f. reactive sputtering

Infrared Spectroscopy Depth Profiling of Organic Thin Films

Silicon-Oxygen Nanocrystalline Composite Films(nc-SiOx:H)Directly Deposited by Plasma Enhanced Chemical Vapor Deposition

Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice

Real time observation of oxygen diffusion in CGO thin films using spatially resolved Isotope Exchange Raman Spectroscopy

Oxygen Vacancy Induced Structure Change and Interface Reaction in HfO2 Films on Native SiO2/Si Substrate

Depth Profiling of Si Oxidation States in Si-Implanted SiO<sub>2</sub> Films by X-Ray Photoelectron Spectroscopy

Elemental distributions around the oxide scales/alloy interfaces by SIMS and GDOES analyses

Spectroscopic Depth Profilometry of Organic Thin Films Upon Inductively Coupled Plasma Etching.

In Situ Infrared Spectroscopy Depth Profilometer for Organic Thin Films

Oxygen vacancy-driven evolution of structural and electrical properties in SrFeO3−δ thin films and a method of stabilization

Helium retention depth profile in plasma-facing materials measured by glow-discharge optical emission spectroscopy

Characterization of Polycrystalline Gradient Thin Film by X-ray Diffraction Method

Thin-film Nano-Thermogravimetry Applied to Praseodymium-Cerium Oxide Films at High Temperatures