Influence of annealing time on the conversion-light properties of YbF3:Er film

Y. Zhang,R. Z. Wang,M. H. Qu,K. Y. Li,C. X. Liu,H. Yan

DOI: https://doi.org/10.1364/n3.2013.nsa3a.41

2013-01-01

Abstract:The conversion-light YbF3:Er films have been prepared with different annealing time, which emit strong 656 nm red light upon excitation by both 378 nm and 980 nm light with high transmittances above 95%.

What problem does this paper attempt to address?

Red Up-Conversion Emission in Α-Kyb3f10:Er3+films Made by Electrodeposition

Xiaowen Wu,Linlin Tian,Qinyan Lu,Run Liu

DOI: https://doi.org/10.1039/c5ra07346d

IF: 4.036

2015-01-01

RSC Advances

Abstract:Annealed α-KYb3F10:Er3+(2 mol%) films grown through electrodeposition from aqueous solutions at low temperature show nearly single intense red emission excited by a 980 nm laser.
Hexagonal Phase Β-Nayf4:Yb3+/er3+films with Intense Upconversion Luminescence Made by Electrodeposition and Low Temperature Annealing

Lijie Zhang,Linlin Tian,Hui Wang,Xi Zhang,Jianying Gong,Run Liu

DOI: https://doi.org/10.1149/2.0281808jss

IF: 2.2

2018-01-01

ECS Journal of Solid State Science and Technology

Abstract:Hexagonal phase beta-NaYE4:Yb3+/Er3+ thin films composed of hexagonal prism structures were made by an anode electrodeposition from aqueous solution and low temperature annealing. The in-situ electrochemical quartz crystal microbalance and cyclic voltammetry methods were applied to studied the mechanism of electrodeposition of NaYF4 films. The hexagonal phase NaYE4:Yb3+/Er3+ films exhibited much higher intense green and red emissions excited by 980 nm laser than its cubic phase counterpart and two-photon upconversion mechanism was involved. (C)2018 The Electrochemical Society.
Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Qianyu Fu,Yuhan Gao,Dongsheng Li,Deren Yang

DOI: https://doi.org/10.1063/1.4952751

IF: 2.877

2016-01-01

Journal of Applied Physics

Abstract:In this paper, we report on the luminescence-center (LC)-mediated excitation of Er3+ as a function of annealing temperature in Er-doped Si-rich SiO2 (SRO) films fabricated by electron beam evaporation. It is found that the annealing temperature has significant effects on the emission of Er3+ and the specific optical-active point-defects called LCs within Er-doped SRO films. Different luminescence centers generated by the evolution of microstructures during annealing process act as efficient sensitizers for Er3+ in the films when the annealing temperature is below 1100 °C. Moreover, the temperature dependence of the energy coupling between LCs and Er3+ demonstrates the effective phonon-mediated energy transfer process. In addition, when the annealing temperature reaches 1100 °C, the decreased density of activable erbium ions induced by the aggregation of Er will bring detrimental effects on the emission of Er3+. It is demonstrated that an appropriate annealing process can be designed to achieve efficiently enhanced emissions from Er3+ ions by optimizing the density of LCs and the coupling between Er3+ and LCs.
Effect of Thermal Annealing on the Microstructure and Morphology of Erbium Films

H. H. Shen,S. M. Peng,X. G. Long,X. S. Zhou,L. Yang,K. Sun,X. T. Zu

DOI: https://doi.org/10.1016/j.tsf.2012.05.084

IF: 2.1

2012-01-01

Thin Solid Films

Abstract:The effects of thermal annealing on the microstructure and morphology of erbium films were investigated by X-ray diffraction and scanning electron microscopy. All the erbium films were fabricated by electron-beam vapor deposition. The columnar grain sizes of as-received erbium films increased with the substrate temperatures and were enlarged by the coalescence and migration of grains during the high temperature annealing. The intrinsic stresses of erbium films, fabricated at a low substrate temperature (200°C), were relaxed accompanied with the appearance of cracks on the films surface. The films deposited at 200°C had (002) preferred orientation, and the film deposited at 450°C had mixed (100) and (101) texture. The peak positions and the full width at half maximum of (100), (002), and (101) diffraction lines of erbium shift towards higher angles and sharply decrease during the annealing process, indicating that the stress inside the film was relaxed.
Influence of annealing atmosphere and temperature on photoluminescence of Tb3+ or Eu3+-activated zinc silicate thin film phosphors via sol–gel method

Q.Y Zhang,K Pita,wei ye,W.X Que

DOI: https://doi.org/10.1016/S0009-2614(01)01370-7

IF: 2.719

2002-01-01

Chemical Physics Letters

Abstract:Thin films of Zn2SiO4:Tb3+ or Eu3+ were deposited on silicon wafers by a sol–gel method. The films exhibited prominent green or red photoluminescence, due to the sharp and strong intra-4fn-shell electronic transitions. The thermogravimetric analysis curve shows a remarkable weight loss in the temperature range 50–400°C, and a slow loss at higher temperature. The increases in fluorescence intensity and decay lifetimes of rare-earth ions sensitive to microstructure and chemical components are attributed to OH removal, nano-crystallite formation and the increased surface roughness by treatment of temperature. Strongly enhanced photoluminescence was observed in samples annealed at 950 °C in a nitrogen atmosphere.
Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Ying Xiao,Yong Liü,Gaorong Han

2004-01-01

Abstract:A specially designed chemical vapor deposition (CVD) system with SiH4 as the source gas was lab built to grow nano-composition silicon films on glass substrate. The microstructures and photoluminescence of these films were systematically studied by micro-Raman spectroscopy, photoluminescence (PL) and transmission electron microscopy (TEM). The results showed that as the deposition temperature increased the PL intensity of original samples decreased. When the annealing temperature was below 600°C, it could not strongly affect the crystallization. If the anneal temperature increased or the anneal time prolonged, the PL intensity could be enhanced. And a kind of single-crystal Si-Ox was found in most of the annealed samples. By comparable investigation, two luminescence mechanisms could explain the different PL intensity of origin and annealed samples.
Influence of air annealing temperature and time on the optical properties of Yb:YAG single crystal grown by HDS method

Nie Ying,Liu Yang,Zhao Yequan,Zhang Mingfu

DOI: https://doi.org/10.1016/j.optmat.2015.04.019

IF: 3.754

2015-01-01

Optical Materials

Abstract:•For HDS-Yb:YAG, annealing at above 1000°C for 5h or at 900°C for 40h made color centers disappear.•Annealing at 1200°C has relatively optimal and comprehensive optical parameters.•At 900°C, annealing time 40h is optimized and even surpass 1400°C for 5h.
Effect of annealing temperature on optical properties of Erbium doped Y2Zr2O7 transparent ceramics

Shijie Li,Kai Ma,Yucheng Ye,Wenhan Han,Sihui Li,Yuting Shi,Ya Tang,Gang Cheng,Xinghua Zhu,Jianqi Qi

DOI: https://doi.org/10.1016/j.ceramint.2022.08.294

IF: 5.532

2022-12-01

Ceramics International

Abstract:Through the vacuum sintering method, Erbium-doped Y2Zr2O7 transparent ceramics were successfully fabricated. The obtained ceramics were annealed at different temperatures and the relationship between annealing temperature and sample structure was investigated to reveal the effect of oxygen vacancy. Y1.98Er0.02Zr2O7 ceramics annealed at 800 °C starts to be transparent and when added up to 900 °C, samples show the highest transmittance over 76% in the near-infrared (NIR) region. Then the transmittance gradually decreased to 71% with the increase of annealing temperature. XRD and SEM measurements were performed to characterize the crystal structure and microstructure of Er3+: Y2Zr2O7 as-prepared powders and ceramics. The excitation spectra display that Y1.98Er0.02Zr2O7 ceramics can be effectively excited by 382 nm. When the annealing temperature exceeds 700 °C, two strong green emission bands and one red emission band can be observed in both up-conversion (UC) and down-conversion (DC) fluorescence spectra. Our results suggest that annealing temperature has a great impact on the structure and optical properties of Er3+: Y2Zr2O7 ceramics, which is significant for fabricating ceramics with better optical properties.

materials science, ceramics
Research on optical properties of Yb3+/Er3+ co-doped oxy-fluoride glass

Xiuming Li,Gaoling Zhao,Shimin Liu,Yang Li,Hao Ying,Junbo Liu,Jianxun Wang,Gaorong Han

DOI: https://doi.org/10.3788/AOS200929S1.190

2009-01-01

Abstract:The Yb3+/Er3+ co-doped and Er3+ single doped oxyfluoride glasses were prepared by high temperature melting method. The optical properties of the samples were studied. According to differential thermal analysis (DTA) curve, the samples were thermal treated at 552°C, and micro-crystalline were formed after thermal treatment. The near infrared luminescence spectra under 980 nm excitation of the samples were recorded at room temperature. The results showed that the near infrared luminescence intensity increased with increasing Yb3+ concentration. This is because Yb3+ ions absorbed pumped energy of 980 nm through 2F7/2 → 2F5/2 transition, and then the energy was transferred to Er3+ ions by the way of resonance energy transfer and enhanced the 4I15/2 → 4I11/2 transition.
Influence of annealing on microstructure and electrochromic properties of WO3 thin film

Feng Rao,Gaorong Han

2004-01-01

Abstract:WO3 films, grown by electron beam evaporation on indium tin oxide (ITO) coated glass substrates, were annealed at a temperature ranging from 250°C to 550°C, for different time intervals of 1-4 hours in air. Its microstructures were characterized with X-ray diffraction (XRD). The results show that annealing strongly affects the crystallinity and electrochromic properties of the WO3 films. Possible mechanisms were also tentatively discussed.
Effect of Annealing on PL Intensity of NaYF4:Er3+, Yb3+/Ca2+ Phosphor and the Application to Temperature Sensor

Fuli Zhang,Chunlai Guo,Zhen Zhang,Xu Chen,Chunlei Song,Chengren Li

DOI: https://doi.org/10.1155/2023/6653019

IF: 2.336

2023-09-20

Journal of Sensors

Abstract:We have prepared NaYF4:Er3+/Yb3+/Ca2+ phosphors using the solvothermal method and discussed the influence of annealing on the crystal structure, morphology, and photoluminescence characteristics in this work. The results show that, with the increase of annealing temperature, the crystallization phase changes from a single cubic structure to a mixed phase of cubic and hexagonal phases and the morphology is also condensed from spherical particles to sheets. In particular, the PL intensity of the annealed phosphor becomes much stronger than that of the unannealed phosphor. An annealed NaYF4:Yb3+, Er3+/Ca2+ phosphor is selected as an example to investigate the performance of high temperature sensor based on the fluorescence intensity ratio between two green emissions. The measurement range and the maximum absolute sensitivity SA of the annealed sensor material are superior to the corresponding parameters of the same phosphor without annealing. The curve of relative sensitivity curve SR decreases as the ambient temperature increases, but that of the revolution δT presents an opposite trend. All the results show that the NaYF4:Er3+/Yb3+/Ca2+ phosphor is more suitable for application on the high temperature sensor after annealing.

engineering, electrical & electronic,instruments & instrumentation
Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Ying XIAO,Yong LIU,CHUN HOU,Gao-rong HAN

DOI: https://doi.org/10.3785/j.issn.1008-973X.2005.07.002

2005-01-01

Abstract:A specially designed chemical vapor deposition (CVD) system with SiH_4 as the source gas was constructed to grow nano-composition silicon films on glass substrate. The microstructure and photoluminescence of these films were systematically studied by measurements of micro-Raman, photoluminescence (PL) and high resolution transmission microscope (HRTEM). The results show that the increasing deposition temperature decrease the PL intensity of the as-deposited samples. The annealing temperature below 600 don't strongly affect the crystallization. And increasing the annealing temperature or prolonging the annealing time enhances the PL intensity obviously. HRTEM analysis confirms that the film had a special nano-composite structure. Relevant investigation shows that two luminescence mechanisms can explain the different PL intensity of as-deposited and annealed samples.
Control of the Formation and Luminescent Properties of Polymorphic Erbium Silicates on Silicon

Yuhan Gao,Hao Shen,Jiahao Cao,Dongsheng Li,Deren Yang

DOI: https://doi.org/10.1364/ome.9.001716

2019-01-01

Optical Materials Express

Abstract:We report on the control of the formation and the luminescent properties of polymorphic forms of erbium (Er) silicates by the modification of annealing temperatures, annealing atmospheres and chemical compositions. Four Er silicate polymorphs, X1-Er2SiO5, y-Er2Si2O7, alpha-Er2Si2O7 and beta-Er2Si2O7, are fabricated in Er-doped SiO2 films. Higher annealing temperatures turn the Er silicates into more stable polymorphs, but the annealing in O-2 and the deviation of chemical compositions from the stoichiometry of Er silicates will restrain this process. The luminescent properties of these polymorphs are quite different due to their strong correlation with the crystallographic structures. Photoluminescence spectra with the main peaks at 1530 nm, 1536 nm, 1529 nm, and 1539 nm are obtained for X1-Er2SiO5, y-Er2Si2O7, alpha-Er2Si2O7 and beta-Er2Si2O7, respectively, and the highest photoluminescence efficiency is associated to Er ions in y-Er2Si2O7. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Enhanced Luminescence of Erbium Doped Ga2O3 Films and Devices by Optimizing Annealing Process

Houwei Pang,Yuxuan Fan,Yuan Wang,Yunfeng Wu,Dongsheng Li,Deren Yang

DOI: https://doi.org/10.1016/j.mssp.2023.108029

IF: 4.1

2023-01-01

Materials Science in Semiconductor Processing

Abstract:Silicon based erbium doped Ga2O3 films and devices are fabricated. It is found that the intensity of Er3+ ions emission can be enhanced by optimizing the content of sensitizer as well as increasing the optical activity of Er3+ ions in the way of adjusting the annealing process. The indirectly excited luminescence of Er3+ ions can be improved, as measured by photoluminescence and electroluminescence, via selecting N2 as the ambient, decreasing the annealing temperature or prolonging the thermal treatment time. Herein, light emitting devices present the maximum optical power density of-0.84 mu W/cm2. This work proposes a way to optimize the indirect emission by regulating the content of sensitizers and the optical activity of Er3+ ions, beneficial to the practical use of electrically-driven silicon-based light sources.
Structure and Luminescence Evolution of Annealed Europium-doped Silicon Oxides Films

Dongsheng Li,Xuwu Zhang,Lu Jin,Deren Yang

DOI: https://doi.org/10.1364/oe.18.027191

IF: 3.8

2010-01-01

Optics Express

Abstract:Europium (Eu)-doped silicon oxide films with Eu concentrations from 2.1 to 4.7 at. % were deposited by electron beam evaporation. The Eu related luminescence from the films was found to be sensitive to the evolution of film microstructures at different annealing temperatures. Luminescence centers in the films changed from defects of silicon oxides to 4f(6)5d-4f(7)(8S(7/2)) transition of Eu2+ after the films annealed in N2 at temperature higher than 800 °C. The evolution of luminescence centers was attributed to the formation of europium silicate (EuSiO3), which was confirmed by x-ray photoelectron spectroscopy, x-ray diffraction, time resolved photoluminescence, and transmission electron microscopy.
Upconversion Luminescence Property of Er3+ and Yb3+ Co-doped Germanium Silicate Glass

HE Yunlong,ZHAO Gaoling,WANG Jianxun,HAN Gaorong

DOI: https://doi.org/10.7521/j.issn.0454-5648.2013.06.23

2013-01-01

Abstract:Er3+ and Yb3+ co-doped germanium silicate oxyfluoride glasses of 30SiO2–20GeO2–15Al2O3–5B2O3–30CaF2 were prepared by a melting-quenching method.The samples were characterized by polycrystalline X-ray diffraction,fluorescence spectroscopy and thermal analysis,respectively.The results show that the glass transition temperature Tg and Tx–Tg(Tx is glass first crystallization temperature) both decrease as the content of Er2O3 increases from 0.5% in mole to 2.0%.The red luminescence intensity order of magnitude increases from 103 to 105 when the content of Yb2O3 increases from 1.5% in mole to 4.5%.The upconversion luminescence intensity of Er does not change significantly after heat-treated at 760 ℃ for 12 h.
Annealing Effects on the Structure and Electrical Characteristics of Amorphous Er 2 O 3 Films

Fang Ze-Bo,Zhu Yan-Yan,Wang Jia-Le,Jiang Zui-Min

DOI: https://doi.org/10.1088/1674-1056/18/8/067

2009-01-01

Abstract:Amorphous Er2O3 films are deposited on Si (001) substrates by using reactive evaporation. This paper reports the evolution of the structure, morphology and electrical characteristics with annealing temperatures in an oxygen ambience. X-ray diffraction and high resolution transimission electron microscopy measurement show that the films remain amorphous even after annealing at 700 degrees C. The capacitance in the accumulation region of Er2O3 films annealed at 450 degrees C is higher than that of as-deposited films and films annealed at other temperatures. An Er2O3/ErOx/SiOx/Si structure model is proposed to explain the results. The annealed films also exhibit a low leakage current density (around 1.38 x 10(-4) A/cm(2) at a bias of -1 V) due to the evolution of morphology and composition of the films after they are annealed.
The effect of annealing temperatures on morphologies and photoluminescence properties of terbium-doped SiCN films

Zhiyong Chen,Jinyuan Zhou,Xi Song,Xianbo Xu,Yanxia Liu,Jie Song,Ziwei Ma,Erqing Xie

DOI: https://doi.org/10.1016/j.optmat.2010.03.001

IF: 3.754

2010-01-01

Optical Materials

Abstract:Terbium-doped SiCN (SiCN:Tb) films were prepared by radio frequency (rf) reactive sputtering at room temperature (RT) and then annealed in a carbothermal ambience at 800 and 1250°C, respectively. The RT prepared and 1250°C annealed samples have shown blue–green and blue–violet light emissions, respectively; whereas strong green light emissions were observed only from the 800°C annealed samples. X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), and X-ray photoelectron spectroscopy (XPS) results revealed that the change of PL properties can be attributed to the evolution of microstructure and chemical compositions of the SiCN films. In addition, photoluminescence excitation (PLE) spectrum indicated that the best PL performance of the 800°C annealed samples might be mainly attributed to the direct band gap (about 3.81eV) of crystalline SiCN.
Structural, Luminescent Properties and Chemical State Analysis of YAG:Ce Nanoparticle-Based Films

Bin Wang,Hongji Qi,Hetong Han,Zhaohui Song,Jianyu Chen,Jianda Shao

DOI: https://doi.org/10.1364/ome.6.000155

2015-01-01

Optical Materials Express

Abstract:Y3Al5O12: Ce (YAG:Ce) nanoparticles need annealing treatment at high temperature to transform the amorphous precursors to crystalline YAG phase. However, little is known about Ce chemical state analysis and photoluminescence (PL) properties of YAG:Ce nanoparticles with the different annealing temperatures and atmospheres. In this paper, amorphous nanoparticle-based YAG:Ce films, prepared by electron beam deposition technique on fused silica substrates, have been annealed at different conditions. Ce3+, Ce4+ states and Ce3+/Ce4+ atomic ratio have been distinctly separated and calculated by X-ray photoelectron spectroscopy (XPS). Combined Ce3+/Ce4+ atomic ratio with the microstructures, the Ce chemical state modification and PL properties of YAG: Ce films with different annealing treatments have been investigated throughout. Low temperature annealing in air can cause oxidation of Ce3+, higher temperature (>= 750 degrees C) annealing in air can cause partial reduction of Ce4+ due to the high-temperature pyrolysis. In this paper, value of Ce3+/Ce4+ is the maximum after 850 degrees C annealing in H-2, and YAG: Ce film annealed in H-2 has the maximum luminous intensity, which could be proposed to the increased Ce3+ content. According to the systematical research and analysis, one can find that the Ce3+ content controls the luminescence efficiency. This paper provides a feasible approach to produce YAG: Ce nanoparticle-based films for the practical applications, and provides the understanding about YAG: Ce luminescent properties. (C)2015 Optical Society of America
Investigation on the thermal effects of NaYF 4 :Er under 1550 nm irradiation.

Hong Wang,Xiumei Yin,Mingming Xing,Yao Fu,Ying Tian,Xin Feng,Tao Jiang,Xixian Luo

DOI: https://doi.org/10.1039/c7cp00079k

IF: 3.3

2017-01-01

Physical Chemistry Chemical Physics

Abstract:The thermal effects of NaYF4:Er microcrystals under 1550 nm laser diode irradiation were investigated using an infrared thermal imaging method. The results revealed that the temperature of the LD irradiation beam area was non-uniform. The NaYF4:Er sample exhibits a rapid temperature increase within 5-10 s, and the heating process reaches its steady state after 60 s of irradiation when exposed to 1550 nm LD. The response time, temperature increase, and emission intensity of the samples depend on the excitation power density and concentration of doped Er3+ ions. Low excitation power density is required to avoid the influence of thermal effects on the up-conversion emission spectra measurement. Rapid scanning in up-conversion emission spectra measurement is not effective in preventing the heating effect under high excitation power pumping. In addition, a relative deviation of temperature, existing in fluorescence intensity ratio technique, decreased with the increasing irradiation time.

Influence of annealing time on the conversion-light properties of YbF3:Er film

Red Up-Conversion Emission in Α-Kyb3f10:Er3+films Made by Electrodeposition

Hexagonal Phase Β-Nayf4:Yb3+/er3+films with Intense Upconversion Luminescence Made by Electrodeposition and Low Temperature Annealing

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Effect of Thermal Annealing on the Microstructure and Morphology of Erbium Films

Influence of annealing atmosphere and temperature on photoluminescence of Tb3+ or Eu3+-activated zinc silicate thin film phosphors via sol–gel method

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Influence of air annealing temperature and time on the optical properties of Yb:YAG single crystal grown by HDS method

Effect of annealing temperature on optical properties of Erbium doped Y2Zr2O7 transparent ceramics

Research on optical properties of Yb3+/Er3+ co-doped oxy-fluoride glass

Influence of annealing on microstructure and electrochromic properties of WO3 thin film

Effect of Annealing on PL Intensity of NaYF4:Er3+, Yb3+/Ca2+ Phosphor and the Application to Temperature Sensor

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Control of the Formation and Luminescent Properties of Polymorphic Erbium Silicates on Silicon

Enhanced Luminescence of Erbium Doped Ga2O3 Films and Devices by Optimizing Annealing Process

Structure and Luminescence Evolution of Annealed Europium-doped Silicon Oxides Films

Upconversion Luminescence Property of Er3+ and Yb3+ Co-doped Germanium Silicate Glass

Annealing Effects on the Structure and Electrical Characteristics of Amorphous Er 2 O 3 Films

The effect of annealing temperatures on morphologies and photoluminescence properties of terbium-doped SiCN films

Structural, Luminescent Properties and Chemical State Analysis of YAG:Ce Nanoparticle-Based Films

Investigation on the thermal effects of NaYF 4 :Er under 1550 nm irradiation.