Abstract:HfO2, as a gate dielectric material for the charge trapping memory, has been studied extensively due to its merits such as high k value, good thermal stability, and conduction band offset relative to Si, etc.. In order to understand the reason why the charge trapping efficiency is improved by high k capture layer with respect to charge trapping type memory, the variation of HfO2 crystal texture induced by oxygen vacancy and the influences of it are investigated using the first principle calculation based on density functional theory. Results show that the distance of the nearest neighbor oxygen atom from oxygen vacancy is markedly reduced after optimization, whereas the decrease of distances between the next nearest neighbor oxygen atom from oxygen vacancy and hafnium is less. The change of local crystal lattice is caused by optimized oxygen vacancy for it significantly changes the local lattice, but rarely influences the far lattice. Deep energy level and density of electron states in conduction band are contributed by Hf atoms, while the density of electron states in valence band is contributed by O atoms. The local density of electron states in each element and the total density of electron states in the optimization system are all larger than those in the system without optimization, and the sum of the local densities of electron states is less than the total density of electron states. The trapped charges are moving mainly around the oxygen vacancy and the adjacent atoms of oxygen in the optimization system, but the charges are without optimization throughout the system. The local energy of charge is increased in optimized defect system, while the local energy of charge is conspicuously reduced in the system without optimization, i.e. lattice variation without saturation characteristic has a large effect on the local energy of charge. Results further prove that the change of crystal lattice induced by oxygen vacancy has strong ability to capture charge, which helps improve the features of memory.

Electron Trap Energy Distribution in HfO 2 by the Discharge-Based Pulse I–V Technique

Experimental Study on the Oxide Trap Coupling Effect in Metal Oxide Semiconductor Field Effect Transistors with HfO2 Gate Dielectrics

Investigation of Extra Traps Measured by Charge Pumping Technique in High Voltage Zone in P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Hfo2/Metal Gate Stacks

An Electric-Opto Combined Measurement Method for Identifying Filled Traps in the Off-State of HEMTs with High Spatial Resolution

Impact of Interface Trap Density on the Endurance of HFO<inf>2</inf>/SI FEFETS

Electron trapping in HfO 2 layer deposited over a HF last treated silicon substrate

The identification of traps in HfO 2 -based FeFET with SiON as an interlayer using current transient method

Trap characteristics of hafnium oxide-based ferroelectric field-effect transistors measured by using a current transient method

New Framework for the random charging/discharging of oxide traps in HfO2 gate dielectric: ab-initio simulation and experimental evidence

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Theoretical investigation on hydrogen-related oxide traps in HfO2 gate dielectrics: An ab-initio study

High-K Shallow Traps Observed by Charge Pumping with Varying Discharging Times

Probing the oxygen vacancy associated native defects in high-κ HfO2 using deep level transient spectroscopy

Extraction of Equivalent Oxide Thickness for HfO2 High k Gate Dielectrics

In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO 2 /tin Structure for CMOS Applications

Comprehensive Investigation of Multi-traps Induced Degradation in HfO2 Based nMOSFETs with Interfacial Layer by 3D-KMC Method

In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO2/TiN Structure for CMOS Applications

An Accurate Method To Extract And Separate Interface And Gate Oxide Traps By The Mosfet Subthreshold Current

Characterization of Interface and Bulk Traps in Ultrathin Atomic Layer-Deposited Oxide Semiconductor MOS Capacitors With HfO2/In2O3 Gate Stack by C-V and Conductance Method

Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices

Effect of Oxygen Vacancy on Lattice and Electronic Properties of HfO2 by Means of Density Function Theory Study