Abstract:It is significant to prepare large-scale and high-quality graphene on SiC substrate for the research of the device in nanoelectronics. This review presents a brief overview on the progress in the growth mechanism for epitaxial graphene on SiC substrate surface, the methods of modification and the research of graphene-based devices. Graphene has attracted the interest of the scientists due to its exceptional electronic properties, which make it a promising material for nanoelectronics. Nowadays, the high-quality epitaxial graphene can be obtained with the smooth morphology, few defects, large size by controling the environment, annealing temperature and vapor pressure. The special structure that the first carbon layer grown above the Si-terminated SiC substrate form strong covalent bonds with substrate, results in some unusual properties such as opening a band gap in the graphene bilayer and a n-type doping of the graphene layers. The rotated fault, which is owed to decoupling effect, has been observed in C-terminated multilayer graphene. And such intrinsic properties of graphene depend on the atom type of SiC surface, surface state, weakness of bonds and the transformation of the electrons between the few-layer graphene and SiC substrate. Some limitations (such as little band gap, intrinsic n-type character, etc.) resulted from the properties of epitaxial graphene must be overcome for the device application. Thus tremendous effort has been devoted to achieve the deliberate control of the band gap, the density and character of its charge carriers. Having a deep understanding of the unique properties for epitaxial graphene, this article then selectively reviews modification methods by considing the type of atoms, size of atoms, work function and electron affinity. In order to manufacture well-behaved devices, many of the fundamental problems of graphene-based eletronics, including methods to make metal contacts, nanoscale patterning and other technical details should be addressed perfectly. It is also important to control the material of gate, modulate the face of substrate, the width of channel in order to improve the performance of the graphene-based devices such as carrier mobility and I-on/I-off ratios. The combination between the experiment and calculation (such as Monte Carlo simulation, density functional theory, molecular dynamics simulation etc.) can make a deeper understanding of the effects of SiC substrate and the methods of modification, which can be served as a guide for further research.

Graphene Layers on Si-face and C-face Surfaces and Interaction with Si and C Atoms in Layer Controlled Graphene Growth on SiC Substrates

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

In situ atomic-scale observation of monolayer graphene growth from SiC

Growth of Large Domain Epitaxial Graphene on the C-Face of SiC

Identification of Dominant Scattering Mechanism in Epitaxial Graphene on Sic

Interface Structure of Graphene on SiC(000-1)

Epitaxial graphene on SiC(0001): More than just honeycombs

Resolving the Controversial Existence of Silicene and Germanene Nanosheets Grown on Graphite.

Graphene formed on SiC under various environments: Comparison of Si-face and C-face

Surface and interface structure of quasi-free standing graphene on SiC

Preparation of Graphene on Different-Polarity 6H-Sic Substrates and the Study of Their Electronic Structures

Surface Structures Of Single-Crystal Graphene On Cu/Ni(111) And Ge(110) Substrates Studied By Scanning Tunneling Microscopy

Effect of Interfacial Layer on Graphene Structure In-Situ Grown on Cemented Carbide

Chemical Vapor Deposition of Graphene on Self-Limited SiC Interfacial Layers Formed on Silicon Substrates for Heterojunction Devices

Effect of Polar Faces of SiC on the Epitaxial Growth of Graphene: Growth Mechanism and Its Implications for Structural and Electrical Properties

Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment

High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum

Interfacial Coupling Induced Discrete Orientation of Epitaxial Graphene on High‐Index Cu Substrates

Interface Investigation on SiGe/Si Multilayer Structures: Influence of Different Epitaxial Process Conditions

Influence of the Etching Process on the Surface Morphology of 4H-Sic Substrate Used in the Epitaxial Graphene

STM Characterization of a Graphitized SiC(0001)surface