Abstract:In this paper we show how to link the electronic structures of two III-V systems, one a direct gap material, GaAs, and the other an indirect gap material, GaP, from their bulks right down to the shape of thin nanowires. GaAs and GaP bulk and nanowire systems are studied in the zincblende and wurtzite structures both free of strain and subjected to biaxial strains perpendicular to the [111]/[0001] direction. We provide an interpretation of the band structure of nanowires, grown along the [111] (zinc-blende structure) and the [0001] (wurtzite structure) directions, in terms of the bulk band structures of the corresponding binary compounds. The procedure reveals the origin of the valence and conduction valleys relevant to determine the nature (direct or indirect) of the band gaps and the kind (direct and pseudodirect) of the valence to conduction transitions. Thus, by calculating only the bulk bands it is possible to describe the behavior of the nanowire bands even for very thin nanowires. The effects on the band structures due to biaxial strain are analogously analyzed, providing for bulk GaP the first results in literature. The role of confinement, and surface relaxation, in determining the nanowire electronic structure of thin nanowires are analyzed separately revealing that the change in the nature of the band gap is due mainly to surface relaxation effects, not confinement. We show that the change for indirect/direct of the gap from the bulk to the 1D systems is mainly due to the competition between the energies of bulk conduction valleys which are differently inuenced by confinement and strain. While the main effect of confinement is to open all gaps it is not necessarily the main cause of the direct/indirect change in the nature of the electronic gap as instead is usually claimed in the literature.

Tuning Band Energies in a Combined Axial and Radial GaAs/GaP Heterostructure

In Situ Mechanical Resonance Behaviour of Pristine and Defective Zinc Blende GaAs Nanowires

Anticrossing of Axial and Planar Surface-Related Phonon Modes in Raman Spectra of Self-Assembled Gan Nanowires

Direct Measure of Strain and Electronic Structure in Gaas/Gap Core-Shell Nanowires

Tuning Hole Mobility of Individual p-Doped GaAs Nanowires by Uniaxial Tensile Stress

Band folding, strain, confinement, and surface relaxation effects on the electronic structure of GaAs and GaP: from bulk to nanowires

Growth and Properties of III–V Compound Semiconductor Heterostructure Nanowires

Full characterization and modelling of graded interfaces in a high lattice-mismatch axial nanowire heterostructure

Two-Dimensional Energy Band Engineering in GaAs/AIGaAs Core-Shell Nanowires by Crystal-Phase Switching for Charge Manipulation

Mapping of Electronic Band Gap along the Axis of Single InAs/InSbxAs1-x Heterostructured Nanowire

Electronic Structures of [1 1 1]-Oriented Free-Standing InAs and InP Nanowires

Polar Vibration Spectra Of Interface Optical Phonons And Electron-Interface Optical Phonon Interactions In A Wurtzite Gan-Aln Nanowire

Anelastic behavior in GaAs semiconductor nanowires.

Probing strain in wurtzite InP-InAs core-shell nanowires with Raman spectroscopy

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

Strain controllable band alignment, interfacial and optical properties in tellurene/GaAs van der Waals heterostructures

Fast nanoscale imaging of strain in a multi‐segment heterostructured nanowire with 2D Bragg ptychography

Strain Relaxation and Band-Gap Tunability in Ternary Inxga1-Xn Nanowires

A Cathodoluminescence study of InP/InGaP axially heterostructured NWs for tandem solar cells

Measurements of Strain and Bandgap of Coherently Epitaxially Grown Wurtzite InAsP-InP Core-Shell Nanowires.