Mechanical and Electronic Properties of 2D-Phthalocyanines under External Strain

Yilei Wang,Haili Zhang,Guisheng Zhang,Yanfeng Guo

DOI: https://doi.org/10.1039/c5ra20063f

IF: 4.036

2015-01-01

RSC Advances

Abstract:External strain sparks the localization of π-electrons, leading to the increase of band gaps and effective masses in 2D-phthalocyanines.

What problem does this paper attempt to address?

The Phosphorene Under The External Electronic Field And Strain

Tao Wang,Yan Liu,Wen Wen,Wei Guo,You Yin

DOI: https://doi.org/10.1142/S0129183117501315

2017-01-01

International Journal of Modern Physics C

Abstract:Using the ab initio plane-wave ultrasoft pseudopotential method based on the generalized gradient approximation (GGA), we investigate the bandgap tuning in monolayer phosphorene in terms of applying external electric fields perpendicular to the layers. The bandgap continuously decreases with the applied electric fields, eventually rendering them metallic. The phenomenon is explained by the giant stark effect. The interlayer P-P distance also result in the semiconductor-to-metal transition. The phosphorene exhibits the significant bandgap tuning ability under different strains with 5% variation. Our investigations show the bandgap change for the fabrication of novel electronic and photonic devices.
Effects of Strain on Electronic and Optic Properties of Holey Two-Dimensional C2N Crystals

Shan Guan,Yingchun Cheng,Chang Liu,Junfeng Han,Yunhao Lu,Shengyuan A. Yang,Yugui Yao

DOI: https://doi.org/10.1063/1.4937269

IF: 4

2015-01-01

Applied Physics Letters

Abstract:A two-dimensional (2D) material, the holey 2D C2N (h2D-C2N) crystal, has recently been synthesized. Here, we investigate the strain effects on the properties of this material by first-principles calculations. We show that the material is quite soft with a small stiffness constant and can sustain large strains ≥12%. It remains a direct gap semiconductor under strain, and the bandgap size can be tuned in a wide range as large as 1 eV. Interestingly, for biaxial strain, a band crossing effect occurs at the valence band maximum close to a 8% strain, leading to a dramatic increase of the hole effective mass. Strong optical absorption can be achieved by strain tuning with absorption coefficient ∼106 cm−1 covering a wide spectrum. Our findings suggest the great potential of strain-engineered h2D-C2N in electronic and optoelectronic device applications.
Tuning the physical properties of ultrathin transition-metal dichalcogenides via strain engineering

Yalan Yan,Shuang Ding,Xiaonan Wu,Jian Zhu,Dengman Feng,Xiaodong Yang,Fangfei Li

DOI: https://doi.org/10.1039/d0ra07288e

IF: 4.036

2020-01-01

RSC Advances

Abstract:Transition-metal dichalcogenides (TMDs) have become one of the recent frontiers and focuses in two-dimensional (2D) materials fields thanks to their superior electronic, optical, and photoelectric properties. Triggered by the growing demand for developing nano-electronic devices, strain engineering of ultrathin TMDs has become a hot topic in the scientific community. In recent years, both theoretical and experimental research on the strain engineering of ultrathin TMDs have suggested new opportunities to achieve high-performance ultrathin TMDs based devices. However, recent reviews mainly focus on the experimental progress and the related theoretical research has long been ignored. In this review, we first outline the currently employed approaches for introducing strain in ultrathin TMDs, both their characteristics and advantages are explained in detail. Subsequently, the recent research progress in the modification of lattice and electronic structure, and physical properties of ultrathin TMDs under strain are systematically reviewed from both experimental and theoretical perspectives. Despite much work being done in this filed, reducing the distance of experimental progress from the theoretical prediction remains a great challenge in realizing wide applications of ultrathin TMDs in nano-electronic devices.
Strain Engineering for 2D Ferroelectricity in Lead Chalcogenides

Tao Xu,Xiaoyuan Wang,Jiawei Mai,Jingtong Zhang,Jie Wang,Tong-Yi Zhang

DOI: https://doi.org/10.1002/aelm.201900932

IF: 6.2

2019-01-01

Advanced Electronic Materials

Abstract:The quest for new 2D ferroelectric materials continues to arouse interest. Based on first-principles calculations, here, 2D ferroelectric properties in lead chalcogenides PbXs (X = S, Se, and Te) with a thickness of two atomic layers via strain engineering is demonstrated. Although these materials are stable in a rocksalt-type cubic structure and are intrinsically nonferroelectric materials, an appropriate mechanical strain can readily activate a paraelectric to ferroelectric phase transition and induce in-plane electric polarization in these atomic layers. The induced polarization magnitude can be as large as 1.90 x 10(-10) C m(-1) at a biaxial strain of epsilon = 4.0%, which is comparable in magnitude to that of ultrathin ferroelectric SnTe. The Curie temperature T-c of the materials is also estimated using effective Hamiltonian simulations. The origin of the emerged ferroelectric phase is attributed to softening of the polar mode with applied strain. In addition, the band gaps of the crystals are found to be tunable with applied strain, which can be adjusted to the ideal value of 1.3 eV for photovoltaic applications. The results not only provide a new route to explore ferroelectricity in 2D materials but also suggest promising semiconducting ferroelectrics for solar applications.
Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications

Zhiwei Peng,Xiaolin Chen,Yulong Fan,David J. Srolovitz,Dangyuan Lei

DOI: https://doi.org/10.1038/s41377-020-00421-5

2020-11-23

Light: Science and Applications

Abstract:Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDCs) and graphene compose a new family of crystalline materials with atomic thicknesses and exotic mechanical, electronic, and optical properties. Due to their inherent exceptional mechanical flexibility and strength, these 2D materials provide an ideal platform for strain engineering, enabling versatile modulation and significant enhancement of their optical properties. For instance, recent theoretical and experimental investigations have demonstrated flexible control over their electronic states via application of external strains, such as uniaxial strain and biaxial strain. Meanwhile, many nondestructive optical measurement methods, typically including absorption, reflectance, photoluminescence, and Raman spectroscopies, can be readily exploited to quantitatively determine strain-engineered optical properties. This review begins with an introduction to the macroscopic theory of crystal elasticity and microscopic effective low-energy Hamiltonians coupled with strain fields, and then summarizes recent advances in strain-induced optical responses of 2D TMDCs and graphene, followed by the strain engineering techniques. It concludes with exciting applications associated with strained 2D materials, discussions on existing open questions, and an outlook on this intriguing emerging field.
First-Principle Studies of Mechanical, Electronic Properties and Strain Engineering of Metal-Organic Framework

Wang Xiao-Yuan,Zhao Feng-Peng,Wang Jie,Yan Ya-Bin

DOI: https://doi.org/10.7498/aps.65.178105

2016-01-01

Abstract:Metal-organic frameworks (MOFs) have attracted a great deal of interest from both academia and industry due to their extensive potential applications. The tunable physical properties through the manipulation of composition have led to increasing attention to the exploration of the MOF applications. However, the tunability of physical property of MOF with external mechanical load, which usually steams from actual fabrication and application processes, has been rarely investigated. Here, ab initio (first-principles) density functional theory calculations are performed to investigate the mechanical, electrical properties and strain engineering of a typical metal-organic framework, MOF-5. Preliminary calculations by using different pseudopotentials and cut-off energies are performed to verify the adopted critical parameters in subsequent simulations. Both the structural stability of MOF-5 and the effect of applied strain are investigated from an energetic point of view. With the increase of applied strain, the cohesive energy of MOF-5 decreases, inducing the reduction of structural stability. In addition, the variation of cohesive energy of MOF-5 shows an asymmetry under expansive and compressive conditions. By applying strain along different directions, the mechanical properties of MOF-5 are systematically investigated, and mechanical constants including Young's modulus, Poisson ratio and elastic constants are obtained. In addition, by analyzing the band gap of MOF-5, the intrinsic electrical property of MOF-5 is clarified. The band gap of MOF-5 is 3.49 eV, indicating that MOF-5 is a wide bandgap semiconductor, which is represented by the combination effect of both [Zn4O](6+) metal clusters and organic linkers. Analysis on the strain engineering of electrical properties of MOF-5 reveals that the applied strain induces the decrease of band gap of MOF-5, and thus leading to the increase of conductivity. This transition is induced by the decrease of conduction energy-level. Further studies on the variations of PDOS and covalent bond show that the strain engineering of electrical property of MOF-5 intrinsically originates from the variation of covalent bond in the organic linker. The applied strain apparently weakens the covalent bond, and thus inducing the relaxation and redistribution of electrons, which increases the activities of electrons, and finally leads to the overall increase of conductivity of MOF-5. This theoretical study quantitatively clarifies the tunability of electronic band gap of MOF-5 with external strain, and provides a theoretical guidance in the design optimization and property evaluation of gas sensors based on MOF-5.
Tunable optoelectronic properties of two-dimensional PbSe by strain: First-principles study

Yuliang Mao,Runlin Wu,Ding Ding,Feng He

DOI: https://doi.org/10.1016/j.commatsci.2021.110957

IF: 3.572

2022-02-01

Computational Materials Science

Abstract:Based on first-principles calculations, we studied the band gap, work function and effective mass of two dimensional (2D) PbSe by using applied external in-planed strain. Our results show a linearly decrease trend of band gap under both compressive and tensile axial strain. However, the typical character of direct band gap of 2D PbSe has been changed to indirect with a minimum value about 0.3 eV. In contrast, under biaxial compression, the original type of direct band gap is kept. Under biaxial compression strain, we predict that the optical absorption coefficient of 2D PbSe in the ultraviolet region has significant enhancement. Moreover, we found that the work function of 2D PbSe is sensitive and can be tuned between 3.60 eV and 5.31 eV by applying biaxial strain. In addition, we predict that the decrease of the effective mass of electrons or holes along with the compressive strain can promote the carrier mobility in PbSe monolayer. These results imply that 2D PbSe has potential applications in optoelectronic devices.

materials science, multidisciplinary
Strain-Induced Gap Transition and Anisotropic Dirac-Like Cones in Monolayer and Bilayer Phosphorene

Can Wang,Qinglin Xia,Yaozhuang Nie,Guanghua Guo

DOI: https://doi.org/10.1063/1.4916254

IF: 2.877

2015-01-01

Journal of Applied Physics

Abstract:The electronic properties of two-dimensional monolayer and bilayer phosphorene subjected to uniaxial and biaxial strains have been investigated using first-principles calculations based on density functional theory. Strain engineering has obvious influence on the electronic properties of monolayer and bilayer phosphorene. By comparison, we find that biaxial strain is more effective in tuning the band gap than uniaxial strain. Interestingly, we observe the emergence of Dirac-like cones by the application of zigzag tensile strain in the monolayer and bilayer systems. For bilayer phosphorene, we induce the anisotropic Dirac-like dispersion by the application of appropriate armchair or biaxial compressive strain. Our results present very interesting possibilities for engineering the electronic properties of phosphorene and pave a way for tuning the band gap of future electronic and optoelectronic devices.
Electronic and optical properties of Y2CCl2 Mxene: Tuning the band gap by biaxial strain

Ebrahim Heidari Semiromi,Zahra Khorasani Baghini,Alireza Mostafaei

DOI: https://doi.org/10.1016/j.ssc.2024.115451

IF: 1.934

2024-04-01

Solid State Communications

Abstract:The structural characteristics and qualities of two-dimensional (2D) materials can be engineered and improved for use in practical applications by applying strain. In this study, the structural, electronic, and optical properties of 2D Y2CCl2 MXene are investigated by density functional theory (DFT). Our results show that the transition of bandgap indirect–direct occur under 8 % tensile strain which is related to the electronic states around the Fermi level. Moreover, the phonon spectra indicate that 2D Y2CCl2 can continue to be stable with +8 % strain. The optical properties are investigated under the biaxial strain. The results of the absorption spectrum show that 2D Y2CCl2 has good absorption in the near-infrared, visible, and UV regions. Hence, this material may be used in solar cell applications. Our results indicate that the tunable electronic and optical properties of semiconducting Y2CCl2 MXene make them a promising candidate for the future applications of optoelectronic devices.

physics, condensed matter
Strain-Induced Spin Crossover in Phthalocyanine-Based Organometallic Sheets

Jian Zhou,Qian Wang,Qiang Sun,Yoshiyuki Kawazoe,Puru Jena

DOI: https://doi.org/10.1021/jz301303t

2012-01-01

Abstract:Motivated by the recent success in synthesizing two-dimensional Fe-phthalocyanine (poly-FePc) porous sheets, we studied strain-induced spin crossover in poly-TMPc (TM = Mn, Fe, Co, and Ni) systems by using first-principle calculations based on density functional theory. A small amount of biaxial tensile strain is found to not only significantly enhance the magnetic moment of the central TM atoms by 2 μB when the strain reaches a critical value, but also the systems undergo low-spin (LS) to high-spin (HS) transition. These systems, however, show different response to strain, namely, poly-FePc sheet becomes ferromagnetic (FM) while poly-MnPc and poly-NiPc sheets become antiferromagnetic (AFM). Poly-CoPc, on the other hand, remains AFM. These predicted results can be observed in suspended poly-TMPc sheets by using scanning tunneling microscope (STM) tips to manipulate strain.
Strain Characterization in Two-Dimensional Crystals.

Shizhe Feng,Zhiping Xu

DOI: https://doi.org/10.3390/ma14164460

IF: 3.4

2021-01-01

Materials

Abstract:Two-dimensional (2D) crystals provides a material platform to explore the physics and chemistry at the single-atom scale, where surface characterization techniques can be applied straightforwardly. Recently there have been emerging interests in engineering materials through structural deformation or transformation. The strain field offers crucial information of lattice distortion and phase transformation in the native state or under external perturbation. Example problems with significance in science and engineering include the role of defects and dislocations in modulating material behaviors, and the process of fracture, where remarkable strain is built up in a local region, leading to the breakdown of materials. Strain is well defined in the continuum limit to measure the deformation, which can be alternatively calculated from the arrangement of atoms in discrete lattices through methods such as geometrical phase analysis from transmission electron imaging, bond distortion or virial stress from atomic structures obtained from molecular simulations. In this paper, we assess the accuracy of these methods in quantifying the strain field in 2D crystals through a number of examples, with a focus on their localized features at material imperfections. The sources of errors are discussed, providing a reference for reliable strain mapping.
First-Principles Calculations of Angular and Strain Dependence on Effective Masses of Two-Dimensional Phosphorene Analogues (Monolayer α-Phase Group-IV Monochalcogenides MX)

Yuanfeng Xu,Ke Xu,Hao Zhang

DOI: https://doi.org/10.3390/molecules24030639

IF: 4.6

2019-02-12

Molecules

Abstract:Group IV monochalcogenides M X (M = Ge, Sn; X = S, Se)-semiconductor isostructure to black phosphorene-have recently emerged as promising two-dimensional materials for ultrathin-film photovoltaic applications owing to the fascinating electronic and optical properties. Herein, using first-principles calculations, we systematically investigate the orbital contribution electronic properties, angular and strain dependence on the carrier effective masses of monolayer M X . Based on analysis on the orbital-projected band structure, the VBMs are found to be dominantly contributed from the p z orbital of X atom, while the CBM is mainly dominated by p x or p y orbital of M atom. 2D SnS has the largest anisotropy ratio due to the lacking of s orbital contribution which increases the anisotropy. Moreover, the electron/hole effective masses along the x direction have the steeper tendency of increase under the uniaxial tensile strain compared to those along y direction.

chemistry, multidisciplinary,biochemistry & molecular biology
Strain-induced effects on the electronic properties of 2D materials

Sara Postorino,Davide Grassano,Marco D’Alessandro,Andrea Pianetti,Olivia Pulci,Maurizia Palummo

DOI: https://doi.org/10.1177/1847980420902569

2020-01-01

Nanomaterials and Nanotechnology

Abstract:Thanks to the ultrahigh flexibility of 2D materials and to their extreme sensitivity to applied strain, there is currently a strong interest in studying and understanding how their electronic properties can be modulated by applying a uniform or nonuniform strain. In this work, using density functional theory (DFT) calculations, we discuss how uniform biaxial strain affects the electronic properties, such as ionization potential, electron affinity, electronic gap, and work function, of different classes of 2D materials from X-enes to nitrides and transition metal dichalcogenides. The analysis of the states in terms of atomic orbitals allows to explain the observed trends and to highlight similarities and differences among the various materials. Moreover, the role of many-body effects on the predicted electronic properties is discussed in one of the studied systems. We show that the trends with strain, calculated at the GW level of approximation, are qualitatively similar to the DFT ones solely when there is no change in the character of the valence and conduction states near the gap.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Strain-modulated defect engineering of two-dimensional materials

Prosun Santra,Sadegh Ghaderzadeh,Mahdi Ghorbani-Asl,Hannu-Pekka Komsa,Elena Besley,Arkady V. Krasheninnikov

DOI: https://doi.org/10.1038/s41699-024-00472-x

IF: 10.516

2024-05-07

npj 2D Materials and Applications

Abstract:Strain- and defect-engineering are two powerful approaches to tailor the opto-electronic properties of two-dimensional (2D) materials, but the relationship between applied mechanical strain and behavior of defects in these systems remains elusive. Using first-principles calculations, we study the response to external strain of h -BN, graphene, MoSe 2 , and phosphorene, four archetypal 2D materials, which contain substitutional impurities. We find that the formation energy of the defect structures can either increase or decrease with bi-axial strain, tensile or compressive, depending on the atomic radius of the impurity atom, which can be larger or smaller than that of the host atom. Analysis of the strain maps indicates that this behavior is associated with the compressive or tensile local strains produced by the impurities that interfere with the external strain. We further show that the change in the defect formation energy is related to the change in elastic moduli of the 2D materials upon introduction of impurity, which can correspondingly increase or decrease. The discovered trends are consistent across all studied 2D materials and are likely to be general. Our findings open up opportunities for combined strain- and defect-engineering to tailor the opto-electronic properties of 2D materials, and specifically, the location and properties of single-photon emitters.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Strain-induced Direct–indirect Bandgap Transition and Phonon Modulation in Monolayer WS2

Yanlong Wang,Chunxiao Cong,Weihuang Yang,Jingzhi Shang,Namphung Peimyoo,Yu Chen,Junyong Kang,Jianpu Wang,Wei Huang,Ting Yu

DOI: https://doi.org/10.1007/s12274-015-0762-6

IF: 9.9

2015-01-01

Nano Research

Abstract:In situ strain photoluminescence (PL) and Raman spectroscopy have been employed to exploit the evolutions of the electronic band structure and lattice vibrational responses of chemical vapor deposition (CVD)-grown monolayer tungsten disulphide (WS2) under uniaxial tensile strain. Observable broadening and appearance of an extra small feature at the longer-wavelength side shoulder of the PL peak occur under 2.5% strain, which could indicate the direct-indirect bandgap transition and is further confirmed by our density-functional-theory calculations. As the strain increases further, the spectral weight of the indirect transition gradually increases. Over the entire strain range, with the increase of the strain, the light emissions corresponding to each optical transition, such as the direct bandgap transition (K-K) and indirect bandgap transition (Γ-K, ≥2.5%), exhibit a monotonous linear redshift. In addition, the binding energy of the indirect transition is found to be larger than that of the direct transition, and the slight lowering of the trion dissociation energy with increasing strain is observed. The strain was used to modulate not only the electronic band structure but also the lattice vibrations. The softening and splitting of the in-plane E’ mode is observed under uniaxial tensile strain, and polarization-dependent Raman spectroscopy confirms the observed zigzag-oriented edge of WS2 grown by CVD in previous studies. These findings enrich our understanding of the strained states of monolayer transition-metal dichalcogenide (TMD) materials and lay a foundation for developing applications exploiting their strain-dependent optical properties, including the strain detection and light-emission modulation of such emerging two-dimensional TMDs.
Using strain to alter the energy bands of the monolayer MoSe2: A systematic study covering both tensile and compressive states

Xuerui Cheng,Liying Jiang,Yuanyuan Li,Huanjun Zhang,Chuansheng Hu,Shiyu Xie,Miao Liu,Zeming Qi

DOI: https://doi.org/10.1016/j.apsusc.2020.146398

IF: 6.7

2020-08-01

Applied Surface Science

Abstract:Understanding the interplay between the strain effect, optical property and electronic structure of a two-dimensional is important, especially for the atomic-thin semiconductors as it has important implication on developing straintronic devices. In this work, we investigate the interplay between strain effects and the electronic structure as well as the lattice vibrational modes of monolayer MoSe2 across a wide-range of the strain from the tension all the way to the compression, using in situ Raman and photoluminescence (PL) spectroscopy as well as density functional calculations. Over the entire strain range, its direct bandgap gradually decreases when the strain changes from compression to tension. In particular, a strain-induced direct-to-indirect transition is observed at compressive strain of -1.3%. Such transition is originated from the opposite movement of conduction band at K, Λ points under strain. When the monolayer is under a tensile strain, unlike the compressive case, the movement of the valence bands plays a major role in causing a K−Γ crossover when the tensile strain reaches 3.3%. It indicates that the electronic structure of monolayer MoSe2 can be fine tuned across a wide strain range.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Strain-engineering in two-dimensional transition metal dichalcogenide alloys

Leah Isseroff Bendavid,Yilin Zhong,Ziyi Che,Yagmur Konuk

DOI: https://doi.org/10.1063/5.0120484

IF: 2.877

2022-12-15

Journal of Applied Physics

Abstract:Two-dimensional (2D) transition metal dichalcogenides (TMDs) are attractive semiconductors for use in electronic, optoelectronic, and spintronic devices. This study examines how the electronic properties of 2D TMDs can be tuned for specific applications through a combination of alloying and applying strain. Group VIB TMDs (MoS 2 , MoSe 2 , WS 2 , and WSe 2 ) are alloyed by mixing in the metal or chalcogen sublattices. Density functional theory is used to model the structures of the alloys at varying compositions and examine the electronic structure of the alloys under biaxial tensile and compressive strain. Alloying results in the continuous monotonic tuning of the direct bandgap between the limits of the pure components, with low bowing coefficients for all alloys. Applying strain results in a transition of the bandgap from direct to indirect at low values of tensile strain and higher values of compressive strain. Strain can also be used to increase or decrease the bandgap with low compressive strain or tensile strain, respectively. The shift rate, or the rate at which the bandgap changes with applied strain, changes monotonically with alloy composition. MoS 2 is identified as the 2D TMD with the highest shift rate.

physics, applied
Strain engineering the electronic and photocatalytic properties of WS 2 /blue phosphene van der Waals heterostructures

Jingnan Wang,Yuhong Huang,Fei Ma,Jianmin Zhang,Xiumei Wei,Jing Liu

DOI: https://doi.org/10.1039/d0cy01656j

2021-01-01

Abstract:The effects of −8–8% in-plane uniaxial and biaxial strains on the electronic and photocatalytic activity of tungsten disulfide/blue phosphene (WS 2 /BlueP) are investigated within the framework of first-principles calculations.

chemistry, physical
Strain-regulated Electronic Properties of Helical Polymer with Phenylacetylene Monomers—a First Principle Study

Yingjie Jiang,Xiaoding Wei

DOI: https://doi.org/10.1088/1361-651x/aca2ca

IF: 2.421

2022-01-01

Modelling and Simulation in Materials Science and Engineering

Abstract:Helical polymers, a class of organic polymers with a unique spring-like structure, possess interesting electronic configurations and axial quantum transport properties thanks to the tunable interlayer electronic interaction by strain engineering. In this report, we carried out first-principle calculations to investigate the electronic structures and transport properties of the helical polymer with phenylacetylene monomers under compressive strains. The band structures of the material show a remarkable semiconductor-to-metal phase transition and enhanced electronic dispersion caused by the great interlayer coupling when subjected to an increasing compressive strain. During compression, the conduction band minimum and valence band maximum gradually move closer to the Fermi level and eventually pass through the Fermi surface. Moreover, under large strains, a notable overlap between interlayer electron clouds makes an effective channel for the axial electron transmission, explaining the greatly improved charge transport properties. This improvement is mainly due to the formation of the interlayer transmission channels through sigma bonds. Our findings on the strain-regulated electronic properties of helical polymers suggest there are great potential applications of these materials in high-performance sensors and flexible electronic devices.
Strain dependent electronic and optical properties of PtS2 monolayer

Gang Liu,Yan Gan,Ruge Quhe,Pengfei Lu

DOI: https://doi.org/10.1016/j.cplett.2018.08.029

IF: 2.719

2018-01-01

Chemical Physics Letters

Abstract:•Our results elucidate the importance of strain engineering in controllably tuning the band gap of transition metal dichalcogenides (TMDs).•Mechanical strains reduce the band gap of monolayer PtS2, causing an indirect-to- direct band gap transition.•The optical properties were calculated and a clear red shift was observed with the increasing strain.

Mechanical and Electronic Properties of 2D-Phthalocyanines under External Strain

The Phosphorene Under The External Electronic Field And Strain

Effects of Strain on Electronic and Optic Properties of Holey Two-Dimensional C2N Crystals

Tuning the physical properties of ultrathin transition-metal dichalcogenides via strain engineering

Strain Engineering for 2D Ferroelectricity in Lead Chalcogenides

Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications

First-Principle Studies of Mechanical, Electronic Properties and Strain Engineering of Metal-Organic Framework

Tunable optoelectronic properties of two-dimensional PbSe by strain: First-principles study

Strain-Induced Gap Transition and Anisotropic Dirac-Like Cones in Monolayer and Bilayer Phosphorene

Electronic and optical properties of Y2CCl2 Mxene: Tuning the band gap by biaxial strain

Strain-Induced Spin Crossover in Phthalocyanine-Based Organometallic Sheets

Strain Characterization in Two-Dimensional Crystals.

First-Principles Calculations of Angular and Strain Dependence on Effective Masses of Two-Dimensional Phosphorene Analogues (Monolayer α-Phase Group-IV Monochalcogenides MX)

Strain-induced effects on the electronic properties of 2D materials

Strain-modulated defect engineering of two-dimensional materials

Strain-induced Direct–indirect Bandgap Transition and Phonon Modulation in Monolayer WS2

Using strain to alter the energy bands of the monolayer MoSe2: A systematic study covering both tensile and compressive states

Strain-engineering in two-dimensional transition metal dichalcogenide alloys

Strain engineering the electronic and photocatalytic properties of WS 2 /blue phosphene van der Waals heterostructures

Strain-regulated Electronic Properties of Helical Polymer with Phenylacetylene Monomers—a First Principle Study

Strain dependent electronic and optical properties of PtS2 monolayer