Efficient Silicon-on-insulator Polarization Rotator Based on Mode Evolution

Justin C. Wirth,Jian Wang,Ben Niu,Yi Xuan,Li Fan,Leo T. Varghese,Daniel E. Leaird,Minghao Qi,Andrew M. Weiner
DOI: https://doi.org/10.1364/cleo_at.2012.jw4a.83
2012-01-01
Abstract:A compact and high extinction SOI polarization rotator is fabricated and characterized. For TM to TE rotation, a device 37.5 μm in length is demonstrated to have a polarization extinction ratio between 17.8-26 dB from 1525 nm to 1570 nm.
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