Growth and Memory Effect of Er-stabilized Β-Mno2 Films Grown on Si Substrates

Jian Cui,Ting Ji,Tianxiao Nie,Yi Lv,Sheng Yang,Xinju Yang,Zuimin Jiang,Jin Zou

DOI: https://doi.org/10.1088/2053-1591/1/3/036302

IF: 2.025

2014-01-01

Materials Research Express

Abstract:A memory effect is reported for Er-stabilized β-MnO2 films made of highly orientation-aligned textured nanocrystals. The films are composed of nanocrystals with a size of about 20 nm. The crystalline direction along the growth direction is almost along β-MnO2 ⟨ 100 ⟩ , ?> but the one in the plane is disordered. Er doping can effectively enhance the thermal stability of β-MnO2 up to 850 ° ?> C, which is essential for its future application in industry. A memory effect has been observed for both as-grown and annealed samples. The mechanism of the memory effect was found by analysis to be charge trapping by carrier injection, from either the bottom or the top electrode. For the annealed sample, a low leakage current was achieved, which is about 5 orders of magnitude smaller than that of the as-grown sample. The results show that β-MnO2 is a promising candidate material for nonvolatile memory applications.