Graphene On Silicon-On-Sapphire Waveguide Photodetectors

zhenzhou cheng,jiaqi wang,ke xu,h k tsang,chester shu

DOI: https://doi.org/10.1364/cleo_si.2015.sth1i.5

2015-01-01

Abstract:We describe the transfer of chemical vapor deposition grown graphene onto silicon-on sapphire waveguides to form heterostructure waveguide photodetectors which had responsivities of 0.9 mA/W and 4.5 mA/W at 1.55 lam and 2.75 pim wavelengths, respectively.

What problem does this paper attempt to address?

High-responsivity graphene/silicon-heterostructure waveguide photodetectors

Xiaomu Wang,Zhenzhou Cheng,Ke Xu,Hon Ki Tsang,Jian-Bin Xu

DOI: https://doi.org/10.1038/nphoton.2013.241

IF: 35

2013-09-15

Nature Photonics

Abstract:Graphene-based photonic devices, such as ultrafast photodetectors, optical modulators and tunable surface plasmon polariton devices, have experienced rapid development in recent years1,2,3,4,5,6 because they benefit greatly from graphene's strong field-controlled optical response7,8. Here, we demonstrate a graphene/silicon-heterostructure photodiode formed by integrating graphene onto a silicon optical waveguide on a silicon-on-insulator (SOI) with a near to mid-infrared operational range. The waveguide enables absorption of evanescent light that propagates parallel to the graphene sheet, which results in a responsivity as high as 0.13 A W−1 at a 1.5 V bias for 2.75 µm light at room temperature. A photocurrent dependence on bias polarity was observed and attributed to two distinct mechanisms for optical absorption, that is, direct and indirect transitions in graphene at 1.55 µm and 2.75 µm, respectively. Our result demonstrates the use of in-plane absorption in a graphene-monolayer structure and the feasibility of exploiting indirect transitions in graphene/silicon-heterostructure waveguides for mid-infrared detection.

optics,physics, applied
Integrated high responsivity photodetectors based on graphene/glass hybrid waveguide.

Gencheng Wang,Tingge Dai,Zhetao Lvy,Yinlei Hao,Hui Yu,Yuehai Wang,Yubo Li,Xiaoqing Jiang,Jianyi Yang

DOI: https://doi.org/10.1364/OL.41.004214

IF: 3.6

2016-01-01

Optics Letters

Abstract:We propose and fabricate an integrated graphene/glass hybrid photodetector (PD) with high responsivity and broad spectral bandwidth. The glass straight waveguide enables high absorption of the evanescent light of transverse magnetic (TM) mode propagating parallel to the single layer of graphene. It is based on the mechanism of light-induced change in conductance. As a result, a responsivity as high as 0.72 A/W at a low bias voltage of -0.1 V for a wide wavelength range from 1510 to 1630 nm is experimentally obtained. The proposed graphene/glass hybrid PD could find important applications in graphene-based photonic integrated circuits. (C) 2016 Optical Society of America
A synergetic enhancement of localized surface plasmon resonance and photo-induced effect for graphene/GaAs photodetector.

Jianghong Wu,Caiyu Qiu,Sirui Feng,Tianyi Yao,Yanfei Yan,Shisheng Lin

DOI: https://doi.org/10.1088/1361-6528/ab5a08

IF: 3.5

2020-01-01

Nanotechnology

Abstract:Photodetectors based on graphene/GaAs heterostructure were fabricated and demonstrated for application in self-powered photodetection. Then, Si quantum dots (QDs) were spin-coated onto the surface of the devices to enhance the built-in field by photo-induced doping, because of the tunable Fermi level (E-F) of graphene and shallow junction of the heterojunction. Additionally, Au nanoparticles working as a light trapping structure were used to the enhance quantum efficiency of the Si QDs and the optical absorption of the heterojunction, benefitting from localized surface plasmon resonance. Therefore, a large-area photodetector under self-powered conditions achieved a high performance i.e. responsivity (1.81 x 10(5) V W-1), detectivity (2.0 x 10(12) Jones), fast response speed (<0.04 ms), and on-off ratio (6 x 10(3)). The high voltage responsivity opens a promising pathway to ultra-weak light detection, and facilities the development of novel sensors.
A Silicon-Graphene Hybrid Waveguide Photodetector with a 3Db-Bandwidth of 17 GHz

Jiang Li,Yanlong Yin,Jingshu Guo,Chaoyue Liu,Daoxin Dai

DOI: https://doi.org/10.1117/12.2538719

2019-01-01

Abstract:A graphene photodetector based on ultra-thin silicon waveguide at 1.55 mu m is proposed. By reducing the silicon core thickness, the fundamental TE waveguide mode is less confined and light-graphene interaction is enhanced. Benefiting from the ultrathin silicon waveguide and reflector structure, the graphene absorption coefficient reaches 0.36 dB/mu m. A 10nm-thick CVD-grown hexagonal boron nitride is covered on the graphene to improve the device performance. With the help of metal-graphene-metal structure, the contact resistance is reduced dramatically. The devices have shown a responsivity of 1.4 mA/W at 0 V bias and 23.1 mA/W at 0.3 V bias with 0.24 mW input optical power. The measured 3-dB bandwidth is 17GHz under 0V bias voltage at 1550 nm.
Waveguide-integrated Graphene Photodetector with a Bragg Reflector on Silicon

Jiajiu Zheng,Longhai Yu,Sitao Chen,Daoxin Dai

DOI: https://doi.org/10.1364/acpc.2014.ath4b.3

2014-01-01

Abstract:A silicon-based waveguide-integrated graphene photodetector with an asymmetric metallization scheme is demonstrated. A Bragg reflector is introduced to shorten the length of the light absorption section. High responsivity of ~0.2 mA W -1 at 1550 nm under zero bias and broadband photoresponse are observed.
High-performance Silicon−graphene Hybrid Plasmonic Waveguide Photodetectors Beyond 1.55 Μm

Jingshu Guo,Jiang Li,Chaoyue Liu,Yanlong Yin,Wenhui Wang,Zhenhua Ni,Zhilei Fu,Hui Yu,Yang Xu,Yaocheng Shi,Yungui Ma,Shiming Gao,Limin Tong,Daoxin Dai

DOI: https://doi.org/10.1038/s41377-020-0263-6

2020-01-01

Light Science & Applications

Abstract:Graphene has attracted much attention for the realization of high-speed photodetection for silicon photonics over a wide wavelength range. However, the reported fast graphene photodetectors mainly operate in the 1.55 μm wavelength band. In this work, we propose and realize high-performance waveguide photodetectors based on bolometric/photoconductive effects by introducing an ultrathin wide silicon-graphene hybrid plasmonic waveguide, which enables efficient light absorption in graphene at 1.55 μm and beyond. When operating at 2 μm, the present photodetector has a responsivity of ~70 mA/W and a setup-limited 3 dB bandwidth of >20 GHz. When operating at 1.55 μm, the present photodetector also works very well with a broad 3 dB bandwidth of >40 GHz (setup-limited) and a high responsivity of ~0.4 A/W even with a low bias voltage of -0.3 V. This work paves the way for achieving high-responsivity and high-speed silicon-graphene waveguide photodetection in the near/mid-infrared ranges, which has applications in optical communications, nonlinear photonics, and on-chip sensing.
Waveguide-integrated Twisted Bilayer Graphene Photodetectors

Qinci Wu,Jun Qian,Yuechen Wang,Luwen Xing,Ziyi Wei,Xin Gao,Yurui Li,Zhongfan Liu,Hongtao Liu,Haowen Shu,Jianbo Yin,Xingjun Wang,Hailin Peng

DOI: https://doi.org/10.1038/s41467-024-47925-x

IF: 16.6

2024-01-01

Nature Communications

Abstract:AbstractGraphene photodetectors have exhibited high bandwidth and capability of being integrated with silicon photonics (SiPh), holding promise for future optical communication devices. However, they usually suffer from a low photoresponsivity due to weak optical absorption. In this work, we have implemented SiPh-integrated twisted bilayer graphene (tBLG) detectors and reported a responsivity of 0.65 A W–1 for telecom wavelength 1,550 nm. The high responsivity enables a 3-dB bandwidth of >65 GHz and a high data stream rate of 50 Gbit s–1. Such high responsivity is attributed to the enhanced optical absorption, which is facilitated by van Hove singularities in the band structure of high-mobility tBLG with 4.1o twist angle. The uniform performance of the fabricated photodetector arrays demonstrates a fascinating prospect of large-area tBLG as a material candidate for heterogeneous integration with SiPh.
Hybrid ultrathin-silicon/graphene waveguide photodetector with a loop mirror reflector

Jiang Li,Yanlong Yin,Jingshu Guo,Chaoyue Liu,Daoxin Dai

DOI: https://doi.org/10.1364/OE.386103

IF: 3.8

2020-01-01

Optics Express

Abstract:Graphene has emerged as a promising solution for on-chip ultrafast photodetection for its advantages of easy integration, high mobility, adjustable chemical potential, and wide operation wavelength range. In order to realize high-performance photodetectors, it is very important to achieve efficient light absorption in the active region. In this work, a compact and high-speed hybrid silicon/graphene photodetector is proposed and demonstrated by utilizing an ultra-thin silicon photonic waveguide integrated with a loop mirror. With this design, the graphene absorption rate for the fundamental mode of TE polarization is improved by similar to 5 times compared to that in the conventional hybrid silicon/graphene waveguide with h(co)=220 nm. One can achieve 80% light absorption ratio within the active-region length of only 20 mu rn for the present silicon/graphene waveguide photodetector at 1550 nm. For the fabricated device, the responsivity is about 25 mA/W under 0.3V bias voltage and the 3-dB bandwidth is about 17 GHz. It is expected to achieve very high bandwidth by introducing high-quality Al2O3 insulator layers and reducing the graphene channel length in the future. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
High-responsivity Photodetectors Made of Graphene Nanowalls Grown on Si

Longfei Li,Yibo Dong,Weiling Guo,Fengsong Qian,Fangzhu Xiong,Yafei Fu,Zaifa Du,Chen Xu,Jie Sun

DOI: https://doi.org/10.1063/1.5097313

IF: 4

2019-01-01

Applied Physics Letters

Abstract:Graphene nanowalls (GNWs) are wall-like graphene nanosheets that are oriented vertically on a substrate. GNWs have a unique structure and special optoelectronic properties, which enables their use in photodetectors. In this paper, we use plasma-enhanced chemical vapor deposition to directly grow GNWs onto the surface of an n-type lightly doped Si substrate and to optimize the quality of the GNWs by adjusting the growth time and temperature. Furthermore, after the GNWs are lithographically patterned, we use a GNW-Si Schottky structure to develop photodetector arrays which are capable of detecting light from the visible to infrared light spectral range. Throughout the process, GNWs are directly synthesized on a Si substrate without using a catalyst or a transfer step. The process is simple and efficient. Under laser illumination at a wavelength of 792 nm, the highest on/off ratio at zero bias is approximately 105, and the specific detectivity is 7.85 × 106 cm Hz1/2/W. Under a reverse bias of 4 V, the measured responsivity of the detector reaches 1 A/W at room temperature. The device can also produce a light response in the near-infrared band. Upon laser illumination at a wavelength of 1550 nm, the detector shows a responsivity of 12 mA/W at room temperature.
High-speed graphene-silicon-graphene waveguide PDs with high photo-to-dark-current ratio and large linear dynamic range

Jingshu Guo,Chaoyue Liu,Laiwen Yu,Hengtai Xiang,Yuluan Xiang,Daoxin Dai

DOI: https://doi.org/10.48550/arXiv.2205.07051

2022-05-14

Abstract:Two-dimensional materials (2DMs) meet the demand of broadband and low-cost photodetection on silicon for many applications. Currently, it is still very challenging to realize excellent silicon-2DM PDs. Here we demonstrate graphene-silicon-graphene waveguide PDs operating at the wavelength-bands of 1.55 {\mu}m and 2 {\mu}m, showing the potential for large-scale integration. For the fabricated PDs, the measured responsivities are respectively ~0.15 mA/W and ~0.015 mA/W for the wavelengths of 1.55 {\mu}m and 1.96{\mu}m. In particular, the PDs exhibit a high bandwidth of ~33 GHz, an ultra-low dark current of tens of pico-amperes, a high normalized photo-to-dark-current ratio (NPDR) of 1.63x10^6 W^-1, as well as a high linear dynamic range of 3 {\mu}W-1.86 mW (and beyond) at 1.55 {\mu}m. According to the measurement results for the wavelength-bands of 1.55/2.0 {\mu}m and the theoretical modeling for the silicon-graphene heterostructure, it is revealed that internal photo-emission and photo-assisted thermionic field emission dominantly contribute to the photoresponse in the graphene-silicon Schottky junctions, which helps the future work to further improve the performance.

Optics,Applied Physics
High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Jianghong Wu,Maoliang Wei,Jianglong Mu,Hui Ma,Chuyu Zhong,Yuting Ye,Chunlei Sun,Bo Tang,Lichun Wang,Junying Li,Xiaomin Xu,Bilu Liu,Lan Li,Hongtao Lin

DOI: https://doi.org/10.1021/acsnano.1c04359

IF: 17.1

2021-01-01

ACS Nano

Abstract:Due to the excellent electrical and optical properties and their integration capability without lattice matching requirements, low-dimensional materials have received increasing attention in silicon photonic circuits. Bi2O2Se with high carrier mobility, narrow bandgap, and good air stability is very promising for high-performance near-infrared photodetectors. Here, the chemical vapor deposition method is applied to grow Bi2O2Se onto mica, and our developed polycarbonate/polydimethylsiloxane-assisted transfer method enables the clean and intact transfer of Bi2O2Se on top of a silicon waveguide. We demonstrated the Bi2O2Se/Si waveguide integrated photodetector with a small dark current of 72.9 nA, high responsivity of 3.5 A·W-1, fast rise/decay times of 22/78 ns, and low noise-equivalent power of 15.1 pW·Hz-0.5 at an applied voltage of 2 V in the O-band for transverse electric modes. Additionally, a microring resonator is designed for enhancing light-matter interaction, resulting in a wavelength-sensitive photodetector with reduced dark current (15.3 nA at 2 V) and more than a 3-fold enhancement in responsivity at the resonance wavelength, which is suitable for spectrally resolved applications. These results promote the integration of Bi2O2Se with a silicon photonic platform and are expected to accelerate the future use of integrated photodetectors in spectroscopy, sensing, and communication applications.
Silicon-Graphene Heterojunction Waveguide Photodetector with a 3Db-Bandwidth of >14 GHz

Chaoyue Liu,Jingshu Guo,Laiwen Yu,Yuluan Xiang,Daoxin Dai

DOI: https://doi.org/10.1364/acpc.2021.t4a.205

2021-01-01

Abstract:We propose and demonstrate a silicon-graphene heterojunction photodetector with a 100-nm-thick silicon core. The measured 3-dB bandwidth of > 14 GHz at 1570 nm and the normalized photocurrent-to-dark-current ratio (NPDR) of 340 mW −1 are obtained.
Highly responsive and broadband photodetectors based on WS2–graphene van der Waals epitaxial heterostructures

Changyong Lan,Chun Li,Shuai Wang,Tianying He,Zhifei Zhou,Dapeng Wei,Huayang Guo,Hao Yang,Yong Liu

DOI: https://doi.org/10.1039/c6tc05037a

IF: 6.4

2017-01-01

Journal of Materials Chemistry C

Abstract:van der Waals heterostructures built from two-dimensional (2D) materials have attracted wide attention because of their fascinating electrical and optoelectronic properties. Here, we report a highly responsive and broadband photodetector based on WS2-graphene van der Waals epitaxial heterostructures, which were fabricated by directly growing single crystalline few layer WS2 nanosheets on a polycrystalline graphene film. Upon light illumination, the current apparently reduces because of the transfer of photogenerated electrons from WS2 into the underlying p-type graphene and a photo-gating effect induced by the remaining holes, which is in stark contrast to ordinary semiconducting photoconductors. Thanks to the strong and broadband absorption of WS2, the WS2-graphene heterostructure photodetector exhibits a high responsivity with a maximum of 950 A W-1 at 405 nm and a wide spectrum response ranging from 340 to 680 nm. The high performance can be attributed to the internal built-in electric field at the WS2-graphene interface, which leads to the efficient separation of photogenerated electron-hole pairs. The WS2-graphene heterostructure photodetector may have potential applications in low cost, broadband, and flexible optoelectronics.
High-performance Schottky heterojunction photodetector with directly grown graphene nanowalls as electrodes

Jun Shen,Xiangzhi Liu,Xuefen Song,Xinming Li,Jun Wang,Quan Zhou,Shi Luo,Wenlin Feng,Xingzhan Wei,Shirong Lu,Shuanglong Feng,Chunlei Du,Yuefeng Wang,Haofei Shi,Dapeng Wei

DOI: https://doi.org/10.1039/c7nr00573c

IF: 6.7

2017-01-01

Nanoscale

Abstract:Schottky heterojunctions based on graphene-silicon structures are promising for high-performance photodetectors. However, existing fabrication processes adopt transferred graphene as electrodes, limiting process compatibility and generating pollution because of the metal catalyst. In this report, photodetectors are fabricated using directly grown graphene nanowalls (GNWs) as electrodes. Due to the metal-free growth process, GNWs-Si heterojunctions with an ultralow measured current noise of 3.1 fA Hz-1/2 are obtained, and the as-prepared photodetectors demonstrate specific detectivities of 5.88 × 1013 cm Hz1/2 W-1 and 2.27 × 1014 cm Hz1/2 W-1 based on the measured and calculated noise current, respectively, under ambient conditions. These are among the highest reported values for planar silicon Schottky photodetectors. In addition, an on/off ratio of 2 × 107, time response of 40 μs, cut-off frequency of 8.5 kHz and responsivity of 0.52 A W-1 are simultaneously realized. The ultralow current noise is attributed to the excellent junction quality with a barrier height of 0.69 eV and an ideal factor of 1.18. Furthermore, obvious infrared photoresponse is observed in blackbody tests, and potential applications based on the photo-thermionic effect are discussed.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
High Responsivity Photodetectors Based on Graphene/wse2 Heterostructure by Photogating Effect

Shuping Li,Ting Lei,Zhongxing Yan,Yan Wang,Like Zhang,Huayao Tu,Wenhua Shi,Zhongming Zeng

DOI: https://doi.org/10.1088/1674-1056/acfa84

2024-01-01

Chinese Physics B

Abstract:Graphene, with its zero-bandgap electronic structure, is a highly promising ultra-broadband light absorbing material. However, the performance of graphene-based photodetectors is limited by weak absorption efficiency and rapid recombination of photoexcited carriers, leading to poor photodetection performance. Here, inspired by the photogating effect, we demonstrated a highly sensitive photodetector based on graphene/WSe 2 vertical heterostructure where the WSe 2 layer acts as both the light absorption layer and the localized grating layer. The graphene conductive channel is induced to produce more carriers by capacitive coupling. Due to the strong light absorption and high external quantum efficiency of multilayer WSe 2 , as well as the high carrier mobility of graphene, a high photocurrent is generated in the vertical heterostructure. As a result, the photodetector exhibits ultra-high responsivity of 3.85 × 10 4 A/W and external quantum efficiency of 1.3 × 10 7 %. This finding demonstrates that photogating structures can effectively enhance the sensitivity of graphene-based photodetectors and may have great potential applications in future optoelectronic devices.
High Performance Van Der Waals Graphene–WS2–Si Heterostructure Photodetector

Rubin Xiao,Changyong Lan,Yongjun Li,Cheng Zeng,Tianying He,Shuai Wang,Chun Li,Yi Yin,Yong Liu

DOI: https://doi.org/10.1002/admi.201901304

IF: 5.4

2019-01-01

Advanced Materials Interfaces

Abstract:2D materials have become a major focus in material science due to their exotic properties originated from quantum confinement effects. Van der Waals heterostructures composed of 2D materials and conventional semiconductors always show enhanced optoelectronic performance and have attracted much attention in recent years. Here, high performance photodetectors based on graphene-WS2-Si van der Waals heterostructure is reported. The photodetector shows wide spectrum response from visible to near infrared with a maximum photoresponsivity of 54.5 A W-1 at 800 nm. Furthermore, the photodetector has a fast response speed with rise time of 45 mu s and decay time of 210 mu s. Photocurrent mapping shows that not only the graphene-WS2-Si area, but also the graphene-WS2-SiO2-Si area contributes to the photocurrent. With the increase of lateral size of the junction area, the photoresponsivity is reduced due to increased recombination. The response speed decreases with the increase of lateral size of the junction area, which is due to increased junction capacitance. The results indicate that this kind of van der Waals heterostructure has excellent photodetection performance and is suitable for application in high performance broadband photodetectors. Also, the simple fabrication method has a great potential for large scale device integration.
Graphene/GaAs heterostructure based Millimeter/Terahertz wave photodetector

Xu Kai-Qi,Xu Huang,Zhang Jia-Zhen,Wu Xiang-Dong,Yang Lu-Han,Zhou Jie,Lin Fang-Ting,Wang Lin,Chen Gang

DOI: https://doi.org/10.11972/j.issn.1001-9014.2020.05.001

2020-01-01

JOURNAL OF INFRARED AND MILLIMETER WAVES

Abstract:The low intrinsic absorption and the existence of the inherent defects hamper the monoatomic layer graphene from being a high-performance photoelectric material, which leads to the strategy to form heterostructure by combining graphene with semiconductor materials. In this work, a graphene/GaAs heterostructure based photodetector has been designed and fabricated, in which the two-dimensional electron gas arc enhanced to improve the photoresponse ability at the band of sub-millimeter and Terahertz (THz) wave ranging from 20 GHz to 0. 12 THz. Under 25 GHz radiation, the responsivity of photodetector at room temperature (RT) reaches 20. 6 V.W-1, with the response time of 9.8 mu s and the noise equivalent power (NEP) of 3. 2x10(10)W.Hz(-1/2) under a bias of 400 mV. At 0. 12 THz, the responsivity is determined to be 4.6 V.W-1, with the response time of 10 mu s. And a NEP of 1. 4x10(-9) W.Hz(-1/2) can be achieved under the bias of 400 mV. These results exhibit great application potential for the graphene/GaAs heterostructure based THz photodetectors.
Broadband InSb/Si Heterojunction Photodetector with Graphene Transparent Electrode.

Xiaoxia Li,Tai Sun,Kai Zhou,Xin Hong,Xinyue Tang,Dacheng Wei,Wenlin Feng,Jun Shen,Dapeng Wei

DOI: https://doi.org/10.1088/1361-6528/ab884c

IF: 3.5

2020-01-01

Nanotechnology

Abstract:Silicon-based Schottky heterojunction photodetectors are promising due to their compatibility with the semiconductor process. However, the applications of these devices are usually limited to wavelengths shorter than 1.1 µm due to the low absorption of electrode materials at infrared. In this report, silicon-based compound semiconductor heterojunction photodetectors with graphene transparent electrodes are fabricated. Due to the high absorption of InSb at infrared, as well as the good transparency and excellent electrical conductivity of the graphene, the as-prepared photodetectors show a broadband photoresponse with high performance which includes a specific detectivity of 1.9 [Formula: see text]1012 cm Hz1/2 W-1, responsivity of 132 mA W-1, on/off ratio of 1 [Formula: see text]105, rise time of 2 µs, 3 dB cut-off frequency of 172 kHz, and response wavelengths covering 635 nm, 1.55 µm and 2.7 µm. This report proves that graphene as a transparent electrode has a great effect on the performance improvement of silicon-based compound semiconductor heterojunction photodetectors.
Graphene-on-plasmonic Slot Waveguide Photodetector

Wang YiLun,Huang XinYu,Zhou De,Yan QiZhi,Jiang ZhiBin,Chen Liao,Li Xiang,Ye Lei,Zhang XinLiang

DOI: https://doi.org/10.1360/sspma-2020-0157

2020-01-01

Abstract:Integrated silicon-based plasmonic photodetectors have attracted more and more attention recently, due to their potential applications in THz bandwidth. In this paper, by utilizing a simplified two-step lithography process, the photoconductive detector is fabricated with the core structure of plasmonic slot waveguide in two symmetric metallic slabs as microwave electrodes to integrate with mechanically exfoliated graphene. The 3-dB bandwidth of the graphene-on-plasmonic slot waveguide photodetector is exceeded 120 GHz under the theoretical calculation, and the measured bandwidth is still beyond 70 GHz due to the lack of larger-bandwidth equipment. High-speed data reception is demonstrated for 72 Gbit/s NRZ and 64 Gbit/s PAM-4 signals with a BER below 15% soft-decision FEC threshold. Based on the enhanced interactions of light and graphene induced by the subwavelength confinement from the plasmonic structure, the responsivity of 0.13 A/W is achieved under the condition of the 7-mu m long detection zone and the 0.4-V bias voltage. With the advantages of ultra-compact, high-speed, large-bandwidth and compatible with the CMOS process, our photodetector has the potential to be used in high-speed optical interconnection, terahertz transmission and terahertz communication.
Lithium niobate waveguide-integrated Bi2Te3/graphene heterojunction photodetector

Tingfei Yuan,Qiaonan Dong,Xinxing Sun,Lang Gao,Yong Zheng,Ke Wang,Rongbo Wu,Ya Cheng

DOI: https://doi.org/10.1364/OL.540452

2024-10-15

Abstract:We demonstrate an on-chip photodetector by integrating a graphene and topological insulator Bi2Te3 heterostructure on a thin-film lithium niobate waveguide. Lithium niobate on insulator (LNOI) waveguides are fabricated by the photolithography-assisted chemical mechanical etching method. The bismuth telluride (Bi2Te3) and graphene heterostructure design provides enhanced photocurrent due to the effective photocarrier generation. The lithium niobate waveguide-integrated Bi2Te3/graphene heterojunction presents a high absorption coefficient of 2.1 dB/µm. The Bi2Te3/graphene heterojunction photodetector exhibits a responsivity of 2.54 mA/W without external bias at a 1.55 µm wavelength, which is enhancement of sevenfold as compared to the pure graphene-based photodetector. The photodetector has a 3 dB bandwidth of over 4.7 GHz. This work provides a potentially viable method for a self-powered, high responsivity, and fast response of the photodetector integrated with the LNOI photonic platform.

Graphene On Silicon-On-Sapphire Waveguide Photodetectors

High-responsivity graphene/silicon-heterostructure waveguide photodetectors

Integrated high responsivity photodetectors based on graphene/glass hybrid waveguide.

A synergetic enhancement of localized surface plasmon resonance and photo-induced effect for graphene/GaAs photodetector.

A Silicon-Graphene Hybrid Waveguide Photodetector with a 3Db-Bandwidth of 17 GHz

Waveguide-integrated Graphene Photodetector with a Bragg Reflector on Silicon

High-performance Silicon−graphene Hybrid Plasmonic Waveguide Photodetectors Beyond 1.55 Μm

Waveguide-integrated Twisted Bilayer Graphene Photodetectors

Hybrid ultrathin-silicon/graphene waveguide photodetector with a loop mirror reflector

High-responsivity Photodetectors Made of Graphene Nanowalls Grown on Si

High-speed graphene-silicon-graphene waveguide PDs with high photo-to-dark-current ratio and large linear dynamic range

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Silicon-Graphene Heterojunction Waveguide Photodetector with a 3Db-Bandwidth of >14 GHz

Highly responsive and broadband photodetectors based on WS2–graphene van der Waals epitaxial heterostructures

High-performance Schottky heterojunction photodetector with directly grown graphene nanowalls as electrodes

High Responsivity Photodetectors Based on Graphene/wse2 Heterostructure by Photogating Effect

High Performance Van Der Waals Graphene–WS2–Si Heterostructure Photodetector

Graphene/GaAs heterostructure based Millimeter/Terahertz wave photodetector

Broadband InSb/Si Heterojunction Photodetector with Graphene Transparent Electrode.

Graphene-on-plasmonic Slot Waveguide Photodetector

Lithium niobate waveguide-integrated Bi2Te3/graphene heterojunction photodetector