Simulation Study of Electric Influence Caused by Defects on Uhv Ac Gis Spacer

Haoran Wang,Zongren Peng,Zihao Guo,Qingyu Wang,Jintao Liao,Siyu Zhang

DOI: https://doi.org/10.1109/icpadm.2015.7295362

2015-01-01

Abstract:UHV AC GIS spacer is the critical component of gas insulated switchgear (GIS) in UHV substation. It plays a supporting conductor, isolating chamber and electrical insulation role. Defects of GIS spacer like delamination, metallic particles, protrusions will be introduced during manufacturing, installation, operating process, etc. These defects will worsen electrical field distribution and degrade insulation performance of GIS spacer, then safety and stabilization of power system is threatened. In this paper, a basic calculation model of a part of GIS was established using ANSYS. GIS spacer whose main insulation is epoxy was included. Several kinds of defects that may occur on spacer were studied. Interface gaps with different shapes were simulated. The law of electric field distribution with length and width of gaps was summarized. Surface defects like protrusions or pits were modeled on spacer surface with different positions and sizes to see how they influence electric field distribution. Results showed that a longer and narrower gap would lead to a higher electric field. Because of the existence of protrusions or pits, electric field would be enhanced in the near part but depressed in the middle part. The enhancement degrees were nearly the same regardless of the sizes and positions of surface defects.