Luminescent Properties and Microstructure of SiC Doped AlON: Eu2+ Phosphors
Liang-Jun Yin,Chao Cai,Hui Wang,Yu-Jie Zhao,Hao Van Bui,Xian Jian,Hui Tang,Xin Wang,Long-Jiang Deng,Xin Xu,Ming-Hsien Lee
DOI: https://doi.org/10.1016/j.jallcom.2017.07.156
IF: 6.2
2017-01-01
Journal of Alloys and Compounds
Abstract:Superior thermal quenching and degradation of phosphors are required for long lifetime lighting devices, such as light-emitting diodes, which can be realized through composition modification. Here, Al-N bonds in AlON: Eu2+ phosphors are substituted by higher bond order of Si-C. Photoluminescence (PL) results show thermal quenching (at 150 degrees C) and thermal degradation (after 600 degrees C treatment in air) are improved by 5% and 8% with a small decrease of PL intensity in 5% SiC doped AlON: Eu2+ phosphor. To explain these observations, first-principles computational study was performed to understand the Si and C configuration in AlON: Eu2+. The calculations reveal that Si and C elements are not randomly distributed in AlON lattice. It was found that Si prefers occupying tetrahedral sites (Td-Si) and the insertion of C in Td-Si is always energetically favorable, which results in the formation of SiC4 and SiNC3 clusters. Thus, the Al-N substitution by Si-C induces a stronger local structure, which accounts for the emission redshift and better thermal stability. (C) 2017 Published by Elsevier B.V.