Eu Sites in Eu-Doped AlON Phosphors: Anomalous Eu Occupancy Layers

Meng Wang,Sheng-Hui Zhang,Qiang-Qiang Zhu,Zhong-Wei Zhang,Li Zhang,Xin Wang,Lin-Bo Zhang,Yu-Jie Zhao,Xin Xu,Liang-Jun Yin
DOI: https://doi.org/10.1021/acs.jpcc.8b11263
2019-01-01
Abstract:Eu2+-doped aluminum oxynitride (AlON) phosphors show interesting luminescence properties. However, to date, the exact sites of Eu2+ ions in AlON lattices are unknown on account of a large mismatch of the ionic radius between Eu2+ and Al3+. In this paper, Eu occupancy sites in AlON lattices are investigated, which proves that Eu2+ ions are located at the layered structure like EuMgAl10O17 to release the lattice strain. Clarifying the Eu structure in AlON favors a comprehensive understanding of the luminescence properties of AlON:Eu phosphors and supports insight to explore other AlON-based phosphors.
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