Abstract:The design of micro/nanostructures on silicon-on-insulator (SOI) devices has attracted widespread attention in the science and applications of integrated optics, which, however, are usually restricted by the current manufacturing technologies. Hence, in this paper, we propose a mask-free, one-step femtosecond laser lithography method for efficient fabrication of high-quality controllable planar photonic structures on SOI devices. Subwavelength gratings with high uniformity are flexibly prepared on a SOI wafer, and they can be efficiently extended for large-area fabrication with long-range uniformity. Different from the melt flow mechanism to bulk silicon, the buried SiO2 layer of the SOI material provides substantial control over the phase change process, thereby achieving local rapid vaporization to form a high-quality structure. The optical properties of the prepared structures are measured experimentally and determined to possess powerful diffraction and light-coupling characteristics. Strikingly, active control of the SOI surface structure morphology, from the grating to the periodic silicon wire structure, can be realized through precision adjustment of the pulse injection volumes. A homogeneous silicon photonic wire is successfully generated on the SOI device, providing an alternative to the preparation of waveguides. This effective femtosecond laser lithography method for fabricating controllable photonic structures on SOI devices is expected to further promote the development of integrated optics.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.1c11292.Comparison of the surface structure on bulk silicon and SOI upon single femtosecond pulse irradiation; influence of laser fluence on the formation of the SOI surface structure; evolution of the surface structure of bulk silicon as laser fluence increases; influence of SOI structural parameters on femtosecond laser processing; microwire width and grating period at different scanning speeds; EDX analyses of grating structure and microwire structure; and Raman spectroscopy analysis of the laser-exposed region (PDF)This article has not yet been cited by other publications.

Integrating The Soi And Poly-Si Surface Structures In A Monolithic Process For Optical Devices Platform

Integrating SOI and poly-Si surface structures using a monolithic process

A molded surface-micromachining and bulk etching release (MOSBE) fabrication platform on (1 1 1) Si for MOEMS

Recent Advances in Monolithic Integration of Diverse Technologies with Si CMOS

Integration of a UV curable polymer lens and MUMPs structures on a SOI optical bench

Integration of the DRIE, MUMPs, and bulk micromachining for superior micro-optical systems

Design and fabrication of MEMS devices using the integration of MUMPs, trench-refilled molding, DRIE and bulk silicon etching processes

Monolithic Integration of III–V Devices with Silicon Photonics on a Modified SOI Platform

Compact Integrated Waveguide Turning Mirror in SOI

Fabrication Of Integrated Waveguide Turning Mirror On Silicon-On-Insulator

A CMOS Compatible Process for Monolithic Integration of High-Aspect-ratio Bulk Silicon Microstructures

Study on Compatible Cmos-Mems Process with Surface Micromachining for the Application of Monolithic Integration

Integrated Microwave Photonics on Silicon-On-Insulator Platform

Three-dimensional integration of suspended single-crystalline silicon MEMS arrays with CMOS

Monolithic integration of micromachined sensors and CMOS circuits based on SOI technologies

Monolithic Integration Of Micro-Cantilever With Conditioning Circuits Based On Soi Techniques

An SOI–MEMS Technology Using Substrate Layer and Bonded Glass As Wafer-Level Package

Post-CMOS Process for High-Aspect-ratio Monolithically Integrated Single Crystal Silicon Microstructures

Menis Siob Design For Integrated Transceiver Application

Controllable Photonic Structures on Silicon-on-Insulator Devices Fabricated Using Femtosecond Laser Lithography

Implementation of Silicon-on-glass MEMS Devices with Embedded Through-Wafer Silicon Vias Using the Glass Reflow Process for Wafer-Level Packaging and 3D Chip Integration