Investigation Of Interconnect Effects In A Transimpedance Amplifier

Xiaomeng Shi,Zhenghao Lu,Jianguo Ma,Erping Li,Kiat Seng Yeo,Manh Anh Do
DOI: https://doi.org/10.1109/EMCZUR.2006.215002
2006-01-01
Abstract:A novel interconnect model is used in the post layout simulation of a transimpedance amplifier working at 10 GB/s data rate. The unnegligible high frequency interconnect effects such as the inductive effect, skin effect, distributed effect, substrate losses, etc. have been considered in the model. Simulation result employing the proposed model is compared with that using conventional foundry provided RC interconnect model. Apparent discrepancy has been observed and the reason is analyzed.
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