LiNbO 3 -based ferroelectric tunnel junctions with changeable electroresistance for data storage
Shiyu Mao,Yuhang Ge,Jiaxu Yang,Haoming Wei,Yangqing Wu,Tengzhou Yang,Bingqiang Cao
DOI: https://doi.org/10.1016/j.physb.2024.416604
IF: 2.988
2024-10-08
Physica B Condensed Matter
Abstract:Ferroelectric tunnel junctions (FTJs) have attracted considerable attention for potential applications in the next-generation data storage technologies. In this work, we have grown high-quality LiNbO 3 single crystal films on STO (111) substrates by rotational epitaxy. The certain ferroelectricity was achieved in nanoscale epitaxial LiNbO 3 films. Then, the Au/LiNbO 3 /Nb: SrTiO 3 FTJ was fabricated, and the nonvolatile resistive switching controlled by the nonvolatile polarization switching was observed. The Au/LiNbO 3 /Nb: SrTiO 3 FTJs regulate the quantum tunneling effect through ferroelectric polarization reversal to obtain multi-level resistive states, thereby achieving data storage functionality. At room temperature, the ON/OFF current ratio can exceed 10 3 . Furthermore, the FTJs also exhibit excellent retention for more than 10 3 s and good switching endurance for 2000 cycles. The results suggest the application potential of this LiNbO 3 -based FTJ for next generation nonvolatile ferroelectric memories.
physics, condensed matter