Fast and Low-Temperature Synthesis of One-Dimensional (1D) Single-Crystalline SbSI Microrod for High Performance Photodetector

Guihuan Chen,Wei Li,Yongqiang Yu,Qing Yang

DOI: https://doi.org/10.1039/c5ra01180a

IF: 4.036

2015-01-01

RSC Advances

Abstract:A new rapid and low temperature hydrothermal process has been developed for the synthesis of one-dimensional single-crystalline SbSI microrods with high quality and high photodetecting performance.

What problem does this paper attempt to address?

Facile Microwave-Assisted Synthesis of Uniform Sb2Se3nanowires for High Performance Photodetectors

Yong-Qiang Liu,Meng Zhang,Feng-Xia Wang,Ge-Bo Pan

DOI: https://doi.org/10.1039/c3tc31883d

IF: 6.4

2014-01-01

Journal of Materials Chemistry C

Abstract:A facile and rapid microwave-assisted method was developed to synthesize uniform single-crystalline Sb2Se3 nanowires in high yields. The as-prepared Sb2Se3 nanowires were directly used for fabricating prototype photodetectors. The device displayed a remarkable response to light intensity with an on/off ratio larger than 150, short response/recovery times (0.2/1.2 s), and long-term durability. The high sensitivity and robust environmental stability of the devices demonstrate the bright prospects for Sb2Se3 nanowires in highly efficient photodetectors for practical use.
Single-crystalline Sb 2 S 3 microtubes for high-performance broadband visible photodetection

Shili Fu,Xiaohui Liu,Haoyun Dou,Rawaid Ali,Ao Zeng,Jiaxiu Man,Xiaolu Zheng,Hong-En Wang

DOI: https://doi.org/10.1039/d4ta04573d

IF: 11.9

2024-01-01

Journal of Materials Chemistry A

Abstract:Single-crystal Sb 2 S 3 microtubes have been fabricated via a hydrothermal process using EDTA as a structure-directing agent, exhibiting remarkable visible photodetection capabilities and holding potential for applications in optoelectronics.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Improving the optoelectronic properties of single-crystalline antimony sulfide rods through simultaneous defect suppression and surface cleaning

Xiaohui Liu,Shunhong Dong,Xiaolu Zheng,Yicheng Zhang,Yuan Yao,Weibin Zhang,Zhiyong Liu,Ting Zhu,Hong-En Wang

DOI: https://doi.org/10.1039/d3ta00954h

IF: 11.9

2023-04-04

Journal of Materials Chemistry A

Abstract:Low-dimensional semiconductors can be used for the fabrication of various optoelectronic devices due to their fascinating structures and physical properties. Herein, one-dimensional single-crystalline antimony sulfide (Sb 2 S 3 ) rods with tunable lengths/diameters were synthesized via a hydrothermal approach followed by thermal treatment. Comprehensive structural characterizations and theoretical simulations revealed that annealing in H 2 /Ar can further remove the sulfur residue on the pristine Sb 2 S 3 surface and improve the crystallinity of the rods with a reduced number of structural defects. The resultant high-quality Sb 2 S 3 rods manifested impressive optoelectronic properties. As a proof-of-concept, a single Sb 2 S 3 rod photodetector was fabricated and tested. The device manifested good response rate (5.10 A W −1 ), high external quantum efficiency (1130.7%), fast rise/decay time during on/off switching (4.03/4.08 ms), and a good detection rate (2.16 × 10 10 Jones, herein "Jones" are the unit of detection rate by default). The photodetector also displayed a high switching ratio of 109.8 under 560 nm monochromatic light. The photodetection performance is superior or comparable to recently reported systems. Our results highlight the importance of the fine control of crystallinity, purity and defects (density) of semiconductors through rational post treatment for optoelectronic applications. The Sb 2 S 3 rods may also find potential applications in other optoelectronic devices.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Ultrafast Broadband Photodetector Based on SnS Synthesized by Hydrothermal Method

He Tian,Chao Fan,Gangzha Liu,Shuo Yuan,Yonghui Zhang,Mengjun Wang,Erping Li

DOI: https://doi.org/10.1016/j.apsusc.2019.05.175

IF: 6.7

2019-01-01

Applied Surface Science

Abstract:As one of the few two dimensional intrinsic p-type semiconductor materials, fin (II) sulfide (SnS) has gradually emerged in the field of layered metal chalcogenides (LMCs) and has attracted enormous attention due to its superior properties, such as high absorption and low power consumption. In this work, SnS is obtained by a simple, effective and low-cost hydrothermal synthesis route. The morphology, phase structure and chemical composition of the obtained SnS are characterized. The results show that the as-synthesized SnS has a belt-like structure with high purity and crystallinity. The belt length and width are similar to 15 mu m and similar to 5 mu m, respectively. Photodetectors based on such SnS are fabricated, and the photoresponse characteristics are also explored. The photodetectors show excellent and ultrafast photoresponse performance in a broad spectral range in the visible and near-infrared regions. The rise and decay time under illumination at the near-infrared wavelength of 850 nm laser are short as 1.1 ms and 1.3 ms, respectively. The ultrafast photoresponse performance makes SnS a promising candidate for Vis-NIR photodetectors.
Effective Synthesis of Pb5S2I6 Crystals at Low Temperature for Fabrication of a High Performance Photodetector

Hongrui Wang,Guihuan Chen,Jianhang Xu,Yunpeng Xu,Qing Yang

DOI: https://doi.org/10.1021/acs.cgd.7b01358

IF: 4.01

2018-01-01

Crystal Growth & Design

Abstract:Sulfoiodide crystals possess promising properties and functionalities that would be used for technical applications in many areas. In this work, rod-like lead sulfoiodide (Pb5S2I6) crystals with a length of about 3 mm have been fabricated via a rapid hydrothermal process at a temperature down to 160 degrees C for 10 h with the assistance of acid media (hydrochloride acid). Meanwhile, the structure of Pb5S2I6 was characterized, and the optical property of Pb5S2I6 was measured and investigated based on density functional theory calculations. In addition, an individual Pb5S2I6 crystal based photodetector was first constructed on SiO2/Si substrate, which sensitively responds to stimulated sunlight especially in the visible region with high responsivity (0.567 mA W-1), high detectivity (2.69 x 10(9) Jones), and high photoswitching ratio (up to 650). And also, the device presents a short rise/decay time of less than 0.2 s and low noise equivalent power (4.08 X 10-(13) W Hz(-1/2)).
Bismuth sulfoiodide (BiSI) nanorods: synthesis, characterization, and photodetector application

Krystian Mistewicz,Tushar Kanti Das,Bartłomiej Nowacki,Albert Smalcerz,Hoe Joon Kim,Sugato Hajra,Marcin Godzierz,Olha Masiuchok

DOI: https://doi.org/10.1038/s41598-023-35899-7

IF: 17.694

2023-06-01

NanoScience and Technology

Abstract:The nanorods of bismuth sulfoiodide (BiSI) were synthesized at relatively low temperature (393 K) through a wet chemical method. The crystalline one-dimensional (1D) structure of the BiSI nanorods was confirmed using high resolution transmission microscopy (HRTEM). The morphology and chemical composition of the material were examined by applying scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDS), respectively. The average diameter of 126(3) nm and length of 1.9(1) μm of the BiSI nanorods were determined. X-ray diffraction (XRD) revealed that prepared material consists of a major orthorhombic BiSI phase (87%) and a minor amount of hexagonal Bi 13 S 18 I 2 phase (13%) with no presence of other residual phases. The direct energy band gap of 1.67(1) eV was determined for BiSI film using diffuse reflectance spectroscopy (DRS). Two types of photodetectors were constructed from BiSI nanorods. The first one was traditional photoconductive device based on BiSI film on stiff glass substrate equipped with Au electrodes. An influence of light intensity on photocurrent response to monochromatic light (λ = 488 nm) illumination was studied at a constant bias voltage. The novel flexible photo-chargeable device was the second type of prepared photodetectors. It consisted of BiSI film and gel electrolyte layer sandwiched between polyethylene terephthalate (PET) substrates coated with indium tin oxide (ITO) electrodes. The flexible self-powered BiSI photodetector exhibited open-circuit photovoltage of 68 mV and short-circuit photocurrent density of 0.11 nA/cm 2 under light illumination with intensity of 0.127 W/cm 2 . These results confirmed high potential of BiSI nanorods for use in self-powered photodetectors and photo-chargeable capacitors.
Single-Crystal Sb2S3 Tube Prepared by Chemical Vapor Deposition for a 1 Cm Photodetector Application

Jun Zhang,Kanwen Hou,Tao Huang,Jia Yang,Baoqiang Xu,Shaoyuan Li,Bin Yang,Wenhui Ma

DOI: https://doi.org/10.1021/acsaelm.2c00233

IF: 4.494

2022-01-01

ACS Applied Electronic Materials

Abstract:The V-VI group sulfide, Sb2S3, has been widely studied in the application of optoelectronic components because of its distinctive one-dimensional structure and remarkable optoelectronic properties. Low-dimensional semiconductor materials have attracted widespread interest among scientists because they offer more advantages than their bulk or powder forms for optoelectronic applications. In this work, we report the preparation of centimeter-scale length (0.5-2.2 cm) single-crystal Sb2S3 tubes by chemical vapor deposition (CVD). A photodetector based on a single Sb2S3 tube has a promising optical response over the spectral range of about 450 to 808 nm. The best photoresponse was measured by laser irradiation at a wavelength of 808 nm, and a high current switching ratio of about 200 was obtained with fast rise/decay times of 22 and 24 ms, respectively. Moreover, the Sb2S3 tube-based device exhibited excellent switching cycle stability, which is beneficial for practical applications. These encouraging results facilitate the potential applications of Sb2S3 tube-based optoelectronic and semiconductor devices.
Micron-Scale Photodetectors Based on One-DimensionalSingle-Crystalline Sb 2– x Sn x Se 3 Microrods: SimultaneouslyImproving Responsivity and Extending Spectral Response Region

Xue Luo,Shuo Chen,Lixiang Liu,Jianhang Lv,Akeel Qadir,Khurram Shehzad,Xvsheng Qiao,Yang Xu,Lorenz Kienle,Andriy Lotnyk,Xianghua Zhang,Guodong Qian,Xianping Fan

DOI: https://doi.org/10.1021/acs.jpcc.8b09469

2019-01-01

Abstract:Among various one-dimensional (1D) materials, antimony selenide (Sb2Se3) has the large visible to near infrared (vis-NIR) absorption cross section and excellent stability; thus, it shows a huge potential to be applied as photodetectors. However, low electrical conductivity (10(-6) Omega(-1).m(-1) in bulk state) largely limits the extensive applications of Sb2Se3. By a hot-injection-based Sn/Sb substitution strategy, we prepare 1D Sb2-xSnxSe3 microrods to further improve photodetecting performances of Sb2Se3 microrods. Phase and microstructural analysis revealed the formation of orthorhombic 1D Sb2-xSnxSe3 microrods with the length of 20-30 mu m. From Hall effect measurements and absorption spectra, the Sb2-xSnxSe3 microrods were evidenced as a p-type semiconductor with a higher electrical conductivity (6.95 X 10(-4) Omega(-1).m(-1)) and a smaller band gap (0.97 eV) compared with Sb2Se3 microrods. Accordingly, the photodetector based on a single Sb2-xSnxSe3 microrod exhibited a remarkable response to 980 nm light at 10 V with a high responsivity (1.84 x 10(4) A.W-1), a fast response/recovery time (0.134 s/0.153 s), and a longterm durability. Because of the small band gap, the photodetector also exhibited a broadband photoresponse at vis-NIR spectral range. Given their high-responsivity and broadband response, the photodetector based on a single Sb(2-x)Sn(x)Se(3)microrod is a promising candidate for applications in next-generation microdevices.
Synthesis and Photoelectrocatalytic Performance of Sb2S3 Nanorods from Natural Stibnite

Jia Si-Qi,Jiang Zheng,Chi Li-Na,Ye Ying,Hu Shuang-Shuang

DOI: https://doi.org/10.15541/jim20180006

2018-01-01

Abstract:Antimony trisulfide (Sb2S3) nanorods were successfully synthesized via hydrothermal method with the assistance of polyethylene glycol (PEG) and N,N-dimethylformamide (DMF), using natural stibnite as precursor. The effects of experimental parameters on the morphology and the properties of the obtained Sb2S3 were systematically studied, and the possible formation mechanism of Sb2S3 nanorods in the preparation process was also discussed. Phase, compositions, morphology and photoelectric properties of the products were investigated by a series of characterization methods. The photocatalytic activity of nano Sb2S3 on the degradation of methyl orange were investigated under the visible light irradiation. The results showed that the Sb2S3 nanoflakes formed after hydrothermal synthesis at 160V for 12 h, and the nanoflakes would transform into nanorods eventually after N-2-annealing at 400V for 1 h. The obtained Sb2S3 nanorods with a single crystal structure are typically 2 similar to 3 mu m in length, 100200 nm in width, which are direct semiconductor with band gap of 1.66 eV. Photocatalytic degradation rate of the obtained Sb2S3 nanorods on methyl orange under visible light irradiation is higher than that of commercial Sb2S3, which is up to 87.6% after 60 min degradation, exhibiting obvious visible-light activity.
Fast Fabrication of WS2/Bi2Se3 Heterostructures for High-Performance Photodetection

Fan Li,Jialin Li,Junsheng Zheng,Yuanbiao Tong,Huanfeng Zhu,Pan Wang,Linjun Li

DOI: https://doi.org/10.1021/acsami.2c17513

IF: 9.5

2023-01-01

ACS Applied Materials & Interfaces

Abstract:Two-dimensional (2D) material heterostructures have attracted considerable attention owing to their interesting and novel physical properties, which expand the possibilities for future optoelectronic, photovoltaic, and nanoelectronic applications. A portable, fast, and deterministic transfer technique is highly needed for the fabrication of heterostructures. Herein, we report a fast half wet poly(dimethylsiloxane) (PDMS) transfer process utilizing the change of adhesion energy with the help of micron-sized water droplets. Using this method, a vertical stacking of the WS2/Bi2Se3 heterostructure with a straddling band configuration is successfully assembled on a fluorophlogopite substrate. Thanks to the complementary band gaps and high efficiency of interfacial charge transfer, the photodetector based on the heterostructure exhibits a superior responsivity of 109.9 A W-1 for a visible incident light at 473 nm and 26.7 A W-1 for a 1064 nm near-infrared illumination. Such high photoresponsivity of the heterostructure demonstrates that our transfer method not only owns time efficiency but also ensures high quality of the heterointerface. Our study may open new pathways to the fast and massive fabrication of various vertical 2D heterostructures for applications in twistronics/valleytronics and other band engineering devices.
One-step solution processing of printable Sb 2 S 3 nano-rods for high-performance photoconductors

Md Rezaul Hasan,Ikramul Hasan Sohel,Mulpuri V Rao

DOI: https://doi.org/10.1088/2053-1591/ad86aa

IF: 2.025

2024-10-15

Materials Research Express

Abstract:Achieving large-scale, affordable, and highly dependable production of antimony sulfide is crucial for unlocking its potential in various applications, including photoconductors, solid-state batteries, thermoelectrics, and solar cells. In our study, we introduce a straightforward, economical, and catalyst-free single-step solution process for fabricating one-dimensional Sb2S3 nanostructures on polyimide substrates, and we explore their use as photoconductors in the ultraviolet (UV) and visible light spectrum. The precursor solution for creating the Sb2S3 films is prepared by dissolving specified quantities of elemental Sb and S in a solution mixture of ethylenediamine and 2-mercaptoethanol. This solution is then spin-coated onto a polyimide substrate and subsequently annealed at 300°C for several minutes. Utilizing field emission scanning electron microscopy, grazing incidence X-ray diffraction, Raman spectroscopy, and transmission electron microscopy, we demonstrate that the Sb2S3 films possess high crystallinity, uniform morphology, and a composition that is nearly stoichiometric. Additionally, through Tauc plot analysis, we determine that the films exhibit a direct bandgap of approximately 1.67 eV, which is in close agreement with the bandgap predicted by Heyd–Scuseria–Ernzerhof (HSE06) density-functional theory simulations. The metal-semiconductor-metal photoconductors fabricated with these films display a significant photoresponse to both UV and visible light. These devices achieve a UV on/off ratio of up to 160 at a light intensity of 30 mW/cm2, with brief rise and fall times of 44 ms and 28 ms, respectively.

materials science, multidisciplinary
Synthesis of Novel Sbsi Nanorods by A Hydrothermal Method

CR Wang,KB Tang,Q Yang,B Hai,GZ Shen,CH An,WC Yu,YT Qian

DOI: https://doi.org/10.1016/s1387-7003(01)00208-8

2001-01-01

Abstract:SbSI nanorods have been prepared by a known hydrothermal method at 180–190°C for the first time. X-ray diffraction patterns, transmission electron microscopy, and X-ray photoelectron spectra (XPS) are used to characterize the products. The as-synthesized SbSI crystalline displays a rod-like morphology with diameters of 20–50 nm and lengths up to several micrometers. The fundamental absorption edge of the SbSI nanorods is shifted to the shorter wavelength in comparison with that of bulk SbSI crystals. A possible mechanism for the formation of the SbSI nanorods is proposed.
Hydrothermal Synthesis and Fast Photoresponsive Characterization of SnS2 Hexagonal Nanoflakes

He Tian,Chao Fan,Gangzha Liu,Yonghui Zhang,Mengjun Wang,Erping Li

DOI: https://doi.org/10.1007/s10853-018-2959-z

IF: 4.5

2018-01-01

Journal of Materials Science

Abstract:As an emerging material of layered metal dichalcogenides (LMDs), tin disulfide (SnS2) has huge potentials in visible-light detectors and photovoltaic devices due to its 2.0–2.6 eV band gap. However, its photoresponsive characteristic is still relative rarely investigated compared to other LMDs, such as MoS2. Herein, SnS2 nanoflakes are synthesized by a facile and fruitful hydrothermal method, and photoresponsive characteristics are investigated. At first detailed phase structure, morphology and constitution are characterized. This SnS2 is flake-like with a mean diameter of ~ 500 nm, and the atomic ratio of Sn to S is 1:2.1. Furthermore, prototype photodetectors are fabricated and characterized to explore photoresponsive characteristics of these SnS2 nanoflakes. The results show that SnS2 nanoflakes have excellently stable and repeatable photoresponse property to 532 nm and 405 nm incidents. In particular, it reveals a fast response time of 7.3 ms to the 405 nm incident, which enables SnS2 nanoflakes promising candidate for photodetectors.
Solution Synthesis of Ultrathin Single-Crystalline SnS Nanoribbons for Photodetectors Via Phase Transition and Surface Processing.

Zhengtao Deng,Di Cao,Jin He,Su Lin,Stuart M. Lindsay,Yan Liu

DOI: https://doi.org/10.1021/nn302504p

IF: 17.1

2012-01-01

ACS Nano

Abstract:We report the solution-phase synthesis and surface processing of similar to 2-5 mu m long single-crystalline IV-VI tin(II) sulfide (SnS) ultrathin nanoribbons, with thicknesses down to 10 nm, and their use in single nanoribbon based photodetectors. The SnS nanoribbons grow via a metastable-to-stable phase transition from zinc blende (ZB) nanospheres to orthorhombic nanoribbons; dual-phase intermediate heterostructures with zinc blende nanosphere heads and orthorhombic nanoribbon tails were observed. Exchange of long, insulating organic oleylamine ligands by short, inorganic HS- ligands converts the organic SnS nanoribbons into completely inorganic, hydrophilic structures. Field-effect transistor (FET) devices were made from single SnS nanoribbons, both before and after ligand exchange, which exhibit p-type semiconductor behavior. The SnS single nanoribbon based photodetector devices showed highly sensitive and rapid photocurrent responses to illumination by blue, green, and red light. The switching behavior of photocurrent generation and annihilation is complete within approximately 1 ms and exhibits high photoconductivity gains (up to 2.3 x 10(4)) and good stability. The ON/OFF ratio of the photodetector can be engineered to 80 (4 nA/50 pA) using a small drain current (10 mV) for the all inorganic SnS nanoribbons. This work paves the way for the colloidal growth of low-cost, environmentally benign, single-crystalline narrow band gap semiconductor nanostructures from abundant elements for applications in photodetectors and other nanoscale devices.
Selected-control hydrothermal synthesis and photoresponse properties of Bi2S3 micro/nanocrystals

Yan Li,Feng Wei,Yaoguang Ma,Hui Zhang,Zhiwei Gao,Lun Dai,Guogang Qin

DOI: https://doi.org/10.1039/c3ce40435h

IF: 3.756

2013-01-01

CrystEngComm

Abstract:Orthorhombic phase Bi2S3 micro/nanocrystals with various morphologies have been successfully synthesized via a facile one-step hydrothermal approach without any templates or surfactants. The formation mechanisms of the Bi2S3 micro/nanocrystals have been proposed on the basis of the experimental results. The photoresponse properties using Bi2S3 nanorods as a representative system show a significantly enhanced conductivity and a steady photoresponse with a fast response time of 177.1 ms, indicating its potential application in high-speed and high-sensitivity photodetectors and photoelectronic switches.
High-performance Bi2S3 Photodetector Based on Oxygen-Mediated Defect Engineering and Its Wafer-Scale Fast Fabrication

Jiahao Cheng,Wenlin Feng,Xiaozhan Yang,Cuicui Yang,Gang Zhang,Zhiying Liu

DOI: https://doi.org/10.1016/j.jcis.2024.10.125

IF: 9.9

2025-01-01

Journal of Colloid and Interface Science

Abstract:Bi2S3 with a 2D van der Waals structure has attracted much attention due to its high conductivity, large absorption coefficient, and environmental friendliness. The preparation of tunable optoelectronic devices can be realized by exploiting and tuning Bi2S3 intrinsic defects. In this work, a simple and rapid method for the preparation of bismuth sulfide thin films and successfully prepare Bi2S3 with sulfur vacancies (Svac) (LA-Bi2S3) and oxygen passivated (Svac) (AP-Bi2S3) was presented. The defect state difference of the two devices leads to exhibit different optoelectronic properties. Under 638 nm and 1310 nm illuminations, the LA-Bi2S3 photodetectors exhibit responsivities of up to 2250 and 3.6 mA/W and detectivities of 1.69 x 1012 and 2.6 x 109 cm & sdot;Hz1/2 W- 1, while the AP-Bi2S3 photodetectors have ultra-fast on/off speeds of 1 ms and 8 ms, and on/off ratio up to 3 x 103. The preparation method of the tunable optoelectronic devices gives a new avenue for defect tuning in metal sulfides and for the preparation and application of optoelectronic devices.
Interfacial Engineering of High-Performance, Solution-Processed Sb 2 S 3 Phototransistors

Huihuang Huang,Yujie Yang,Hongyi Chen,Fanglu Qin,Bin Yu,Ruonan Wang,Qiang Cao,Ti Wang,Qianqian Lin

DOI: https://doi.org/10.1021/acsami.2c18158

IF: 9.5

2022-12-13

ACS Applied Materials & Interfaces

Abstract:Antimony sulfide, as a binary chalcogenide, has attracted great attention in the field of optoelectronics in recent years, particularly in photovoltaics, because of its striking merits such as earth elements abundance, excellent stability, chemical versatility, and solution processability. With the rapid development of fabrication techniques and device engineering, the device performance of Sb2S3 solar cells has experienced an unprecedented success. However, photodetectors based on Sb2S3 were barely reported, especially based on the transistor configuration. In this work, we prepared high quality Sb2S3 thin films via a sol-gel method, and Sb2S3 thin films were deposited on zinc-tin oxide based field-effect transistors. Furthermore, an additional electron transport layer was inserted between the Sb2S3 layers and the zinc-tin oxide channels and archived high-performance phototransistors with proper interfacial engineering. The optimized devices exhibited extremely high photosensitivity (106), low dark current (∼10 pA) and noise (∼11 fA Hz-1/2), high detectivity (1 × 1013 Jones), and superior device stability, indicating great potential for next generation solution-processed photodetectors.

materials science, multidisciplinary,nanoscience & nanotechnology
A microwave-assisted template-free route for large-scale synthesis of photoluminescent single crystal CsPbI3 nanotubes

Weiwei Xiong,Ziyi Zhang,Yutao Huang,Chenxin Xu,Jiajing Wu,Lingling Li,Fenfen Zheng,Xingcai Wu

DOI: https://doi.org/10.1039/c9ce01722d

IF: 3.756

2020-01-01

CrystEngComm

Abstract:Great efforts have been devoted to the synthesis of various CsPbX3 nanostructures in view of their excellent photovoltaic performance and promising optoelectronic applications. However, the preparation of high-quality one-dimensional cesium lead halide nanotubes still remains challenging and unexplored. Here, we report a microwave-assisted synthetic approach for high-quality single crystalline CsPbI3 nanotubes featuring highly uniform sizes and stable and bright photoluminescence. Furthermore, a CsPbI3 nanotube based photodetector was assembled, which exhibits high sensitivity, stability and a fast response to 405 nm wavelength light. As a new member of the all-inorganic CsPbX3 nanostructure family, CsPbI3 nanotubes could provide a potential platform for understanding their fundamental properties and paving the way for their future application in optoelectronic devices.
Facile and Rapid Growth of Ag2S Microrod Arrays As Efficient Substrates for Both SERS Detection and Photocatalytic Degradation of Organic Dyes.

Qi Cao,Renchao Che,Nan Chen

DOI: https://doi.org/10.1039/c4cc00107a

IF: 4.9

2014-01-01

Chemical Communications

Abstract:A novel bifunctional substrate derived from well-aligned Ag2S microrod arrays was obtained via a facile and cost-effective solvothermal process rapidly within 1 h. It demonstrates great activity for both SERS detection and photocatalytic degradation of organic dyes, and thus holds great potential for environmental monitoring devices and other applications.
One Pot Synthesis of Sb2S3 Nanocrystalline Films Through a PVP-assisted Hydrothermal Process

Wei Zhang,Miao Tan,Ping Zhang,Lina Zhang,Weinan Dong,Qiushi Wang,Jinwen Ma,Enlai Dong,Shichong Xu,Guiqiang Wang

DOI: https://doi.org/10.1016/j.apsusc.2018.06.084

IF: 6.7

2018-01-01

Applied Surface Science

Abstract:In this paper, nanocrystalline antimony sulfide (Sb2S3 ) thin films were prepared on a fin-doped indium oxide (ITO) substrate via a facile polyvinylpyrrolidone (PVP)-assisted hydrothermal method. The crystal structure, morphology and optical properties of the Sb2S3 films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and UV-vis spectroscopy. Well-crystallized Sb2S3 films possessed a honeycomb-like morphology with a whole thickness of approximately 360 nm on the ITO substrate and had a band gap of 2.0 eV. The reaction parameters that influenced the formation of Sb2S3 films, such as reaction time, temperature and quantity of PVP were investigated. PVP was found to play an important role in the formation of the honeycomb-like Sb2S3 films. In the absence of PVP, only large aggregates formed on the ITO substrate. A possible growth mechanism of the Sb2S3 films has been proposed. Furthermore, the as-synthesized Sb2S3 film exhibited a photocurrent density of -0.025 mA cm(-2) at 0 V (vs. RHE) in a neutral solution, close to that of the heated Sb2S3 film. A stability test demonstrated that the as-synthesized Sb2S3 film was stable in both neutral and acidic solutions. This investigation might provide a feasible method for preparing high-quality Sb2S3 films to be used in solar energy conversion.

Fast and Low-Temperature Synthesis of One-Dimensional (1D) Single-Crystalline SbSI Microrod for High Performance Photodetector

Facile Microwave-Assisted Synthesis of Uniform Sb2Se3nanowires for High Performance Photodetectors

Single-crystalline Sb 2 S 3 microtubes for high-performance broadband visible photodetection

Improving the optoelectronic properties of single-crystalline antimony sulfide rods through simultaneous defect suppression and surface cleaning

Ultrafast Broadband Photodetector Based on SnS Synthesized by Hydrothermal Method

Effective Synthesis of Pb5S2I6 Crystals at Low Temperature for Fabrication of a High Performance Photodetector

Bismuth sulfoiodide (BiSI) nanorods: synthesis, characterization, and photodetector application

Single-Crystal Sb2S3 Tube Prepared by Chemical Vapor Deposition for a 1 Cm Photodetector Application

Micron-Scale Photodetectors Based on One-DimensionalSingle-Crystalline Sb 2– x Sn x Se 3 Microrods: SimultaneouslyImproving Responsivity and Extending Spectral Response Region

Synthesis and Photoelectrocatalytic Performance of Sb2S3 Nanorods from Natural Stibnite

Fast Fabrication of WS<sub>2</sub>/Bi<sub>2</sub>Se<sub>3</sub> Heterostructures for High-Performance Photodetection

One-step solution processing of printable Sb 2 S 3 nano-rods for high-performance photoconductors

Synthesis of Novel Sbsi Nanorods by A Hydrothermal Method

Hydrothermal Synthesis and Fast Photoresponsive Characterization of SnS2 Hexagonal Nanoflakes

Solution Synthesis of Ultrathin Single-Crystalline SnS Nanoribbons for Photodetectors Via Phase Transition and Surface Processing.

Selected-control hydrothermal synthesis and photoresponse properties of Bi2S3 micro/nanocrystals

High-performance Bi2S3 Photodetector Based on Oxygen-Mediated Defect Engineering and Its Wafer-Scale Fast Fabrication

Interfacial Engineering of High-Performance, Solution-Processed Sb 2 S 3 Phototransistors

A microwave-assisted template-free route for large-scale synthesis of photoluminescent single crystal CsPbI3 nanotubes

Facile and Rapid Growth of Ag2S Microrod Arrays As Efficient Substrates for Both SERS Detection and Photocatalytic Degradation of Organic Dyes.

One Pot Synthesis of Sb2S3 Nanocrystalline Films Through a PVP-assisted Hydrothermal Process