Improving the optoelectronic properties of single-crystalline antimony sulfide rods through simultaneous defect suppression and surface cleaning

Xiaohui Liu,Shunhong Dong,Xiaolu Zheng,Yicheng Zhang,Yuan Yao,Weibin Zhang,Zhiyong Liu,Ting Zhu,Hong-En Wang
DOI: https://doi.org/10.1039/d3ta00954h
IF: 11.9
2023-04-04
Journal of Materials Chemistry A
Abstract:Low-dimensional semiconductors can be used for the fabrication of various optoelectronic devices due to their fascinating structures and physical properties. Herein, one-dimensional single-crystalline antimony sulfide (Sb 2 S 3 ) rods with tunable lengths/diameters were synthesized via a hydrothermal approach followed by thermal treatment. Comprehensive structural characterizations and theoretical simulations revealed that annealing in H 2 /Ar can further remove the sulfur residue on the pristine Sb 2 S 3 surface and improve the crystallinity of the rods with a reduced number of structural defects. The resultant high-quality Sb 2 S 3 rods manifested impressive optoelectronic properties. As a proof-of-concept, a single Sb 2 S 3 rod photodetector was fabricated and tested. The device manifested good response rate (5.10 A W −1 ), high external quantum efficiency (1130.7%), fast rise/decay time during on/off switching (4.03/4.08 ms), and a good detection rate (2.16 × 10 10 Jones, herein "Jones" are the unit of detection rate by default). The photodetector also displayed a high switching ratio of 109.8 under 560 nm monochromatic light. The photodetection performance is superior or comparable to recently reported systems. Our results highlight the importance of the fine control of crystallinity, purity and defects (density) of semiconductors through rational post treatment for optoelectronic applications. The Sb 2 S 3 rods may also find potential applications in other optoelectronic devices.
materials science, multidisciplinary,chemistry, physical,energy & fuels
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