Abstract:The underlying mechanism in contact electrification is systematically investigated between 2D MXenes and MoS2 through density functional theory and triboelectric probes. The work functions dominate the electron transfer direction, while the interfacial potential barrier and the work function difference together modulate the amount of transferred electron. The electron transfer will occur at the attractive force region due to the quantum tunneling. Contact electrification (triboelectrification) (CE) is a universal phenomenon in ambient environment and has been recorded for more than 2600 years. Nonetheless, the intrinsic mechanism of CE still remains controversial. Herein, based on first‐principles theory, the underlying mechanism in CE is systematically investigated between metallic MXenes and semiconductive MoS2. The results show that the work functions of contacting materials dominate the direction of electron transfer during CE process. That is, the electron will be transferred from the material with low work function to the one with high work function. The theoretical prediction is verified experimentally through investigating triboelectric probes based on MXenes and MoS2 nanomaterials. Additionally, it is noted that the interfacial potential barrier and the work function difference together modulate the amount of transferred electron. Electron transfer mainly occurs in the repulsive forces region where the interaction distance between the two materials is shorter than the normal bonding length. The quantum calculation results agree well with the Wang transition theory. Furthermore, it is also noticed that, due to the wave‐particle duality of electron, electron transfer will obviously occur at the attractive force region when the two contacting materials exhibit a larger work function difference.

Investigation of electrical properties of contact between Molybdenum disulfide and different metals

Influence of MoS 2 -metal interface on charge injection: a comparison between various metal contacts

Study on the Resistance Distribution at the Contact Between Molybdenum Disulfide and Metals.

Investigation of Interface Interactions Between Monolayer MoS 2 and Metals: Implications on Strain and Surface Roughness

Interfacial Defect Engineering on Electronic States and Electrical Properties of MoS2/metal Contacts

Comparison of contact metals evaporated onto monolayer molybdenum disulfide

Metal Contacts On Physical Vapor Deposited Monolayer Mos

Transport Properties Of Moo3 Contacted Few-Layer Mos2 N-Type Field-Effect Transistor

Junction-configuration-dependent interfacial electronic states of a monolayer MoS2/metal contact

Fundamental Understanding of Interface Chemistry and Electrical Contact Properties of Bi and MoS2

Investigating Metal Dopants for Lowering the Contact Resistance of Top Gold Contacted Monolayer MoS2

Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts

Contact-induced doping in aluminum-contacted molybdenum disulfide

Influence of Metal-Mos2 Interface on MoS2 Transistor Performance: Comparison of Ag and Ti Contacts.

Transport Properties of MoO&lt;sub&gt;3&lt;/sub&gt; Contacted Few-Layer MoS&lt;sub&gt;2&lt;/sub&gt; N-type Field-Effect Transistor

Investigation of Contact Electrification between 2D MXenes and MoS2 through Density Functional Theory and Triboelectric Probes

The Contact Properties of Monolayer and Multilayer MoS2-Metal van der Waals Interfaces

Fundamental Understanding of Interface Chemistry and Electrical Contact Properties of Bi and MoS 2

Electron transport across a metal/MoS$_2$ interface: dependence on contact area and binding distance

P-type Ohmic contact to MoS2 via binary compound electrodes

Designing Barrier-Free Metal/MoS 2 Contacts through Electrene Insertion