Helium Plasma Damage of Low-k Carbon Doped Silica Film:the Effect of Si Dangling Bonds on the Dielectric Constant

Li Hailing,Wang Qing,Ba Dechun

DOI: https://doi.org/10.1088/1009-0630/16/11/09

2014-01-01

Abstract:The low-k carbon doped silica film has been modified by radio frequency helium plasma at 5 Pa pressure and 80 W power with subsequent XPS,FTIR and optical emission spectroscopy analysis.XPS data indicate that helium ions have broken Si-C bonds,leading to Si-C scission with C（1s） lost seriously.The Si（2p）,O（1s）,peak obviously shifted to higher binding energies,indicating an increasingly oxidized Si（2p）.FTIR data also show that the silanol formation increased with longer exposure time up to a week.Contrarily,the CH3 stretch,Si-C stretching bond and the ratio of the Si-O-Si cage and Si-O-Si network peak sharply decreased upon exposure to helium plasma.The OES result indicates that monovalent helium ions in plasma play a key role in damaging carbon doped silica film.So it can be concluded that the monovalent helium ions besides VUV photons can break the weak Si-C bonds to create Si dangling bonds and free methyl radicals,and the latter easily reacts with O 2 from the atmosphere to generate CO 2 and H 2 O.The bonds change is due to the Si dangling bonds combining with H 2 O,thereby,increasing the dielectric constant k value.