Abstract:Gate oxide breakdown (OBD) is a key factor limiting the useful lifetime of an integrated circuit. Unfortunately, the conventional approach for full chip OBD reliability analysis assumes a uniform oxide thickness and worst-case temperature for all devices. In practice, however, gate oxide thickness varies from die-to-die and within-die and hence may cause different reliability for different devices even chips. Moreover, due to the increased across-die temperature variation, such difference may be exacerbated. Thus, as the precision of variation control worsens, an alternative reliability analysis approach is needed. In this paper, we propose a statistical framework for chip-level gate OBD reliability analysis while considering both die-to-die and within-die components of thickness variations as well as the across-die temperature variation. The thickness of each device is modeled as a distinct random variable and thus the full chip reliability estimation problem is defined on a huge sample space of several million devices. We observe that the chip-level OBD reliability function is independent of the relative location of the individual devices. This enables us to transform the problem such that the resulting representation can be expressed in terms of much fewer random variables. Using this transformation, we present a computationally efficient and accurate approach for estimating the full chip reliability while considering spatial correlations of gate oxide thickness as well as temperature variation. We show that, compared to Monte Carlo simulation, the proposed method incurs an error of only around 1% while improving the runtime by more than three orders of magnitude.

Combining process and statistical variability in the evaluation of the effectiveness of corners in digital circuit parametric yield analysis

Design Time Body Bias Selection for Parametric Yield Improvement.

Variation-aware gate sizing and clustering for post-silicon optimized circuits.

A statistical approach for full-chip gate-oxide reliability analysis

Process Variation and Temperature-Aware Full Chip Oxide Breakdown Reliability Analysis.

Computational Analysis of Mechanical and Electromigration Reliability Problems

C-Yes: an Efficient Parametric Yield Estimation Approach for Analog and Mixed-Signal Circuits Based on Multicorner-Multiperformance Correlations

Efficient Parametric Yield Estimation over Multiple Process Corners Via Bayesian Inference Based on Bernoulli Distribution

Semiconductor Manufacturing Process Monitoring Based on Adaptive Substatistical PCA

An Efficient Method for Evaluating Analog Circuit Performance Bounds Under Process Variations.

Improving the Process-Variation Tolerance of Digital Circuits Using Gate Sizing and Statistical Techniques

Yield Optimization for Analog Circuits over Multiple Corners Via Bayesian Neural Networks: Enhancing Circuit Reliability under Environmental Variation

Extraction of Process Variation Parameters in FinFET Technology Based on Compact Modeling and Characterization

Compact Modeling of Process Variations in Nanosheet Complementary FET (CFET) and Circuit Performance Predictions

Bayesian Methods for the Yield Optimization of Analog and SRAM Circuits

Multi-Corner Parametric Yield Estimation Via Bayesian Inference on Bernoulli Distribution with Conjugate Prior.

A novel approach to estimate the impact of analog circuit performance based on the small signal model under process variations

Efficient Yield Optimization for Analog and SRAM Circuits Via Gaussian Process Regression and Adaptive Yield Estimation

New Assessment Methodology Based on Energy–Delay–Yield Cooptimization for Nanoscale CMOS Technology

Statistical Analysis of Soft Error Rate in Digital Logic Design Including Process Variations

A Statistical Characterization of CMOS Process Fluctuations in Subthreshold Current Mirrors