Room-temperature logic-in-memory operations in single-metallofullerene devices
Jing Li,Songjun Hou,Yang-Rong Yao,Chengyang Zhang,Qingqing Wu,Hai-Chuan Wang,Hewei Zhang,Xinyuan Liu,Chun Tang,Mengxi Wei,Wei Xu,Yaping Wang,Jueting Zheng,Zhichao Pan,Lixing Kang,Junyang Liu,Jia Shi,Yang Yang,Colin J. Lambert,Su-Yuan Xie,Wenjing Hong
DOI: https://doi.org/10.1038/s41563-022-01309-y
IF: 41.2
2022-07-15
Nature Materials
Abstract:In-memory computing provides an opportunity to meet the growing demands of large data-driven applications such as machine learning, by colocating logic operations and data storage. Despite being regarded as the ultimate solution for high-density integration and low-power manipulation, the use of spin or electric dipole at the single-molecule level to realize in-memory logic functions has yet to be realized at room temperature, due to their random orientation. Here, we demonstrate logic-in-memory operations, based on single electric dipole flipping in a two-terminal single-metallofullerene (Sc 2 C 2 @ C s (hept)-C 88 ) device at room temperature. By applying a low voltage of ±0.8 V to the single-metallofullerene junction, we found that the digital information recorded among the different dipole states could be reversibly encoded in situ and stored. As a consequence, 14 types of Boolean logic operation were shown from a single-metallofullerene device. Density functional theory calculations reveal that the non-volatile memory behaviour comes from dipole reorientation of the [Sc 2 C 2 ] group in the fullerene cage. This proof-of-concept represents a major step towards room-temperature electrically manipulated, low-power, two-terminal in-memory logic devices and a direction for in-memory computing using nanoelectronic devices.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter