Abstract:BiTeCl is a topological insulator with strong inversion asymmetry, which exhibits bulk charge polarization and pyroelectricity. Such a long-sought topological insulator paves the way for applications involving natural p–n junctions and spintronics. In the past few years, a new state of quantum matter known as the time-reversal-invariant topological insulator has been predicted theoretically and realized experimentally. All of the topological insulators discovered so far in experiment are inversion symmetric1,2,3,4,5—except for strained HgTe, which has weak inversion asymmetry, a small bulk gap but no bulk charge polarization6. Strong inversion asymmetry in topological insulators would not only lead to many interesting phenomena, such as crystalline-surface-dependent topological electronic states, pyroelectricity and intrinsic topological p–n junctions, but would also serve as an ideal platform for the realization of topological magneto-electric effects7,8, which result from the modification of Maxwell equations in topological insulators. Here we report the discovery of a strong inversion asymmetric topological insulator phase in BiTeCl by angle-resolved photoemission spectroscopy, which reveals Dirac surface states and crystalline-surface-dependent electronic structures. Moreover, we observe a tenfold increase of the bulk energy gap in BiTeCl over the weak inversion asymmetric topological insulator HgTe, making it a promising platform for topological phenomena and possible applications at high temperature.

Topological Insulators with Unexpectedly HgTe-like Band Inversion in Hexagonal Wurtzite-Type Binary Compounds

Topological Insulators in Hexagonal Wurtzite-type Binary Compounds

A New Class of Topological Insulators from I-III-IV Half-Heusler Compounds with Strong Band Inversion Strength

Prediction of topological insulating behavior in Hg2CuTi-type Heusler compounds from first principles

The Origin of Electronic Band Structure Anomaly in Topological Crystalline Insulator Group-Iv Tellurides

Band Structure Engineering of Multinary Chalcogenide Topological Insulators

On The Influence Of Tetrahedral Covalent-Hybridization On Electronic Band Structure Of Topological Insulators From First Principles

Topological Insulators in Ternary Compounds with a Honeycomb Lattice

Three-Dimensional Topological Insulators Ini−iii−vi2andii−iv

Electronic Structures and Stability Investigation of Large Band Gap Topological Insulators MTl4Te3 ( M = Cd, Hg)

Half-Heusler Compounds As A New Class of Three-Dimensional Topological Insulators

Topological insulators from the Perspective of first-principles calculations

Electronic structures and stability investigation of the new class of large band gap topological insulators MTl$_4$Te$_3$ (M = Cd, Hg)

Theoretical Design of a New Family of Two-Dimensional Topological Insulators.

Topological Surface Dirac Fermion in BiTeCl-Based Heterostructures

Discovery of a Single Topological Dirac Fermion in the Strong Inversion Asymmetric Compound BiTeCl

A first-principles investigation of band inversion in topologically nontrivial Na2AgX (X= As, Sb and Bi) full Heusler compounds

Band Structure Engineering in (Bi(1-X)sb(x))(2)te(3) Ternary Topological Insulators.

Strained HgTe: a textbook 3D topological insulator

Prediction of Topological Insulators in Supercubane-Like Materials Based on First-Principles Calculations.

Topological Insulators from Group Cohomology