Structural, electrical, and thermoelectric properties of distorted 1T-Ta1−xNbxTe2 single crystals

yan liu,w j lu,d f shao,l zu,x c kan,w h song,y p sun
DOI: https://doi.org/10.1209/0295-5075/109/17003
2015-01-01
Abstract:A series of isovalent Nb-substituted Ta1-xNbxTe2 (0 <= x <= 1) single crystals, which crystallizes in a monoclinically distorted CdI2-type structure with the C2/m space group, were grown by the chemical-vapor-transport (CVT) method. For TaTe2 (x = 0), a first-order transition at similar to 178K is observed by heat capacity (C-p) measurement, accompanying with an anomaly in electrical resistivity (rho), Hall resistivity (R-H), and especially, the sign change of thermoelectric power (S), implying the multi- band transport. This transition can be gradually suppressed by isovalent Nb substitution and disappears as x >= 0.2, and correspondingly, an enhancement of electronic density of states (DOS) near the Fermi level is obtained. In addition, the local Ta-Te/Ta-Ta bonding instability may play an important role for the structural phase transition of TaTe2. Copyright (C) EPLA, 2015
What problem does this paper attempt to address?