Abstract:In this work, both the first principles calculations and molecular dynamics simulations are adopted to investigate the formation ability of various intrinsic point defects in 4H-SiC as well as the electronic band structure changes and the swelling effects caused by them. Our results demonstrate that the classical MEAM potential has an unsatisfactory performance on the defect formation energies as compared with the ab initio calculations based on the advanced SCAN functional, but provides a reasonable description on the volumetric swelling caused by single point defect. Both the SCAN and MEAM calculations indicate that the VC monovacancy and the CSi antisite defect will cause the lattice shrinkage, while the VSi monovacancy, the SiC antisite, the IC and the ISi interstitials will induce the volumetric swelling. Besides that, first principles calculations reveal that monovacancies and interstitials would induce defective electronic states near the Fermi level, while antisites have negligible influence on the electronic band structures as compared with the pristine case. Furthermore, the molecular statics relaxations are employed to explore the influence of point defect densities on the swelling behaviors of 4H-SiC, which reveals that the volume swelling ratios present good linear relationships with the increased density of the VC monovacancy, CSi antisite, SiC antisite and IC interstitial defects, but express complex non-linear tendencies with the VSi monovacancy and ISi interstitial defects. Therefore, our research deepens the understanding of the point defects' effects on the electronic properties and swelling behaviors of 4H-SiC.

An Amorphous Sio2/4h-Sic(0001) Interface: Band Offsets and Accurate Charge Transition Levels of Typical Defects

Two-Dimensional Electron or Hole Gas at Zno/6h-Sic Interface

Theoretical investigations of a highly mismatched interface: the case of SiC/Si(001)

The formation of the positive, fixed charge at c-Si(111)/a-Si$_3$N$_{3.5}$:H interfaces

Electronic Structures of Β-Si3n4(0001)/si(111) Interfaces: Perfect Bonding and Dangling Bond Effects

A New Structural Model For The Sic(0001)(3 X 3) Surface Derived From First Principles Studies

First-principles calculation of the interface stability of 3C-SiC(111)/Mg(0001)

Atomic Structural Model of the Si/SiO_2 Interface

First-principles Identification of Deep Energy Levels of Sulfur Impurities in Silicon and Their Carrier Capture Cross Sections

Density Functional Calculations on Atomic and Electronic Structures of Amorphous Hfo2/Si(001) Interface

Structure and energetics of carbon-related defects in SiC (0001)/SiO$_{\rm 2}$ systems revealed by first-principles calculations: Defects in SiC, SiO$_{\rm 2}$, and just at their interface

Understanding the Clean Interface Between Covalent Si and IonicAl2O3

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

A novel intrinsic interface state controlled by atomic stacking sequence at interfaces of SiC/SiO$_2$

Native point defects and carbon clusters in 4H-SiC: A hybrid functional study

Electronic and mechanical properties of Al (100)/6H–SiC (0001) interfaces: a first-principles study

Electronic structure of amorphous silicon carbide compounds

Understanding the Clean Interface Between Covalent Si and Ionic Al2O3

Investigation of Sio2-Sic Interface by High-Resolution Transmission Electron Microscope

Analysis of the electronic structure of β-SiO2 intrinsic defects based on Density Functional Theory

The influence of intrinsic point defects on the electronic band structures and swelling behaviors of 4H-SiC