Epitaxially Stabilized Growth of Orthorhombic Lusco3 Thin Films

T. Heeg,M. Roeckerath,J. Schubert,W. Zander,Ch. Buchal,H. Y. Chen,C. L. Jia,Y. Jia,C. Adamo,D. G. Schlom
DOI: https://doi.org/10.1063/1.2737136
IF: 4
2007-01-01
Applied Physics Letters
Abstract:Metastable lutetium scandate (LuScO3) thin films with an orthorhombic perovskite structure have been prepared by molecular-beam epitaxy and pulsed-laser deposition on NdGaO3(110) and DyScO3(110) substrates. Stoichiometry and crystallinity were investigated using Rutherford backscattering spectrometry/channeling, x-ray diffraction, and transmission electron microscopy. The results indicate that LuScO3, which normally only exists as a solid solution of Sc2O3 and Lu2O3 with the cubic bixbyite structure, can be grown in the orthorhombically distorted perovskite structure. Rocking curves as narrow as 0.05° were achieved. A critical film thickness of approximately 200nm for the epitaxially stabilized perovskite polymorph of LuScO3 on NdGaO3(110) substrates was determined.
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