Organic Field-Effect Transistor Nonvolatile Memories Utilizing Sputtered C Nanoparticles As Nano-Floating-Gate

Jie Liu,Chang-Hai Liu,Xiao-Jian She,Qi-Jun Sun,Xu Gao,Sui-Dong Wang
DOI: https://doi.org/10.1063/1.4898811
IF: 4
2014-01-01
Applied Physics Letters
Abstract:High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories. (C) 2014 AIP Publishing LLC.
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